58results about How to "Significant growth" patented technology

Methods of crystal growth for semiconductor materials, such as nitride semiconductors, and methods of manufacturing semiconductor devices are provided. The method of crystal growth includes forming a number of island crystal regions during a first crystal growth phase and continuing growth of the island crystal regions during a second crystal growth phase while bonding of boundaries of the island crystal regions occurs. The second crystal growth phase can include a crystal growth rate that is higher than the crystal growth rate of the first crystal growth phase and/or a temperature that is lower than the first crystal growth phase. This can reduce the density of dislocations, thereby improving the performance and service life of a semiconductor device which is formed on a nitride semiconductor made in accordance with an embodiment of the present invention.

It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO₂ blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO₂ blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.

Barrier layers for conductive features and methods of formation thereof are disclosed. A first barrier material is deposited on top surfaces of an insulating material, and a second barrier material is deposited on sidewalls of the insulating material, wherein the second barrier material is different than the first barrier material. The first barrier material induces grain growth of a subsequently deposited conductive material at a first rate, and the second barrier material induces grain growth of the conductive material at a second rate, wherein the second rate is slower than the first rate.

An air separation module comprising a bundle of hollow elongated membranes, and a pressure vessel enclosing the bundle. The pressure vessel includes an outer tube, end caps at opposite ends of the tube, and an inner tube located within the fiber bundle. The inner tube is fixedly mechanically connected at opposite ends to the end caps to form a structural spine of the pressure vessel, whereby loads acting on the air separation module are transferred between the end caps primarily by the center tube.

In melting and casting by a water-cooled crucible induction melting technique, a partition means is inserted on top portion of a melt, and a new raw material for is charged on an upper side of the partition means to continue the melting and casting. Therefore, the continuous casting can be kept while avoiding mixture of the melt on a lower side of with the melt on an upper side of the partition means. A partition plate or a partition plate with legs can be used as the partition means. When the present invention is applied to production of a silicon ingot used for a solar cell and the like, productivity is largely improved, which allows costs to be remarkably reduced in solar energy generation. Therefore, the present invention can widely be utilized as the method for casting a polycrystalline-silicon ingot for a solar cell.

A conductive structure in an integrated circuit (12), and a method of forming the structure, is provided that includes a polysilicon layer (30), a thin layer containing titanium over the polysilicon, a tungsten nitride layer (34) over the titanium-containing layer and a tungsten layer over the tungsten nitride layer. The structure also includes a silicon nitride interfacial region (38) between the polysilicon layer and the titanium-containing layer. The structure withstands high-temperature processing without substantial formation of metal silicides in the polysilicon layer (30) and the tungsten layer (32), and provides low interface resistance between the tungsten layer and the polysilicon layer.

The root system activity agent is one kind of powdered product comprising microbial nitrogen, humate, potassium dihydrogen phosphate, dipotassium hydrogen phosphate and chlorine dioxide. It has the main effects of promoting crop's root system growth, raising crop's root system activity, eliminating re-cropping disturbance, raising crop's resistance, raising nutrient utilization, and protecting and repairing soil.

The invention relates to the field of tumor cellular immunotherapy, in particular to a chimeric antigen receptor (CAR) and application thereof. The CAR comprises a hinge region, and the hinge region is IgG4-CH3. The IgG4-CH3 hinge region is introduced into a CAR molecular structure, so that the amplification efficiency of CAR T cells can be specifically increased in an in-vitro culture process, the amplification of CD4+CAR T cells is mainly promoted, CD4 cells and CD8 T cells do not need to be cultured in a separated way, the process is completed in a mixing system, and the amplification efficiency of the CD4+CAR T cells is increased.

The invention discloses a method for walnut seedling culture and transplantation. Through seedling setting with trays, root cutting transplanting and container culture, the growth process and the transplanting process of seedlings do not affect each other. Soil balls which seedling roots take greatly reduce loss of roots in the transplanting process, the transplanting survival rate is improved, the rejuvenation period is shortened, root systems of the cultured seedlings are flourishing, and the standard of grafting on the same year is met. The method is simple to operate, practical, low in cost and consistent in growth vigor, the transplanting survival rate is 95% or above, the seedling growth amount is obvious on the year of transplantation, nearly a half of rootstocks can reach the grafting standard when autumn is up, the seedling culture time is short, and the method is suitable for large-scale reproduction.

The present invention relates to a method 931 for producing a solid element, which comprises the thermoelectrically active material beta-Zn4Sb3. The method utilizes that is possible to directly synthesize and press pellets of Zn4Sb3 starting from powders of Zn and Sb, by mixing 930 powders of Zn and Sb so as to obtain a mixed powder comprising elemental zinc and elemental antimony, placing 932 the mixed powder in a container and simultaneously applying 936 a pulsed current, such as to heat up the powders, and applying 938 a pressure such as to compact the powder mix. The gist of the invention might be seen as exploiting the basic insight, that the cumbersome and time- and energy consuming steps of synthesis and pressing of Zn and Sb, so as to achieve a solid element comprising Zn4Sb3, can be combined into a single step where the synthesis and pressing is effected simultaneously.

Provided are Pseudomonas protegens mutant strain Pf5-NiF, Pf5-ΔretS, or Pf5-ΔretS-NiF, and a screening method therefor and an application thereof. By means of Red/ET recombination and direct cloning technologies, the NiF nitrogen fixation gene island in the genome of Pseudomonas stutzeri DSM4166, taken as a whole, is cloned into the genome of Pseudomonas protegens Pf5, so as to heterologously express the same successfully to obtain a genetically engineered strain Pf5-NiF, thereby bringing a biological nitrogen fixation function to Pseudomonas protegens Pf5 which does not own a biological nitrogen fixation function. In addition, gene-directed markerless knockout of retS gene in the genome of Pseudomonas protegens Pf5 is performed to obtain a genetically engineered strain Pf5-ΔretS. Thus, the expression levels of an antibiotic 2,4-diacetylphloroglucinol and red pigment are increased, and a mutant strain of Pseudomonas protegens Pf5 having a stronger bactericidal activity is obtained.

The invention relates to a novel low temperature baked semi-wet grain and a preparation method thereof. The grain comprises the components in parts by weight: 50-65 parts of chicken, 10-30 parts of puffed rice flour, 10-20 parts of vegetable proteins, 3-5 parts of lecithin, 4-6 parts of fish oil, 0.8-1.2 parts of a compound of compound vitamins and minerals and 0.8-1.2 parts of calcium hydrogen phosphate. According to the novel low temperature baked semi-wet grain provided by the invention, because of low processing temperature, the loss of vitamins is reduced, the content of chicken and wateris high, the semi-wet grain has good palatability and feeding sustained-effects, the weight gain of pets after eating the grain is obvious, the hair color is more smooth and beautiful, and the semi-wet grain is conducive to nutrition supplementing and healthy growth of pets.