Silicon rod crystal line growth state detection method, device and equipment

A technology of growth state and detection method, which is applied in measuring devices, testing semiconductor impurities, image data processing, etc., can solve the problem of accurately determining the crystal line characteristic pixel value and crystal line plane height X, and the crystal line on the surface of a single crystal silicon rod. The characteristics are not obvious, the diameter of the single crystal silicon rod fluctuates, etc.
CN112444516AActive Publication Date: 2021-03-05LONGI GREEN ENERGY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
LONGI GREEN ENERGY TECH CO LTD
Publication Date
2021-03-05

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Abstract

The invention provides a silicon rod crystal line growth state detection method, device and equipment, and relates to the technical field of monocrystalline silicon, and the method comprises the steps: obtaining a sample image of a silicon rod in an equal-diameter growth process of the silicon rod; setting a detection area on the sample image, wherein the detection area is overlapped with the crystal line growth line of the silicon rod; generating a gray value curve of the detection area; and determining the growth state of the crystal line of the silicon rod on the crystal line growth line according to the gray value curve of the detection area. According to the method, the sample image of the silicon rod in the growth process is collected in real time, the detection area is arranged on the sample image, and the growth state of the crystal line of the silicon rod can be determined according to the gray value curve of the detection area so that whether the silicon rod is a monocrystalline silicon rod or not is judged; by adopting the method, the influence of the fluctuation of the diameter of the silicon rod and the unobvious characteristics of the crystal wire on the detection process of the crystal wire is reduced so that the detection precision and the detection efficiency of the crystal wire are improved, and the operation is simple.
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Description

technical field

[0001] The invention relates to the technical field of single crystal silicon, in particular to a method, device and equipment for detecting the crystal line growth state of a silicon rod. Background technique

[0002] In the process of preparing single crystal silicon by the Czochralski method, there are four crystal lines distributed at equal intervals on the surface of the single crystal silicon rod along the axial direction. If dislocation or thermal stress occurs in the single crystal silicon rod, it will cause crystal When switching from single crystal growth to polycrystalline growth, the crystal line on the surface of the single crystal silicon rod is broken. Therefore, whether there are 4 continuous crystal lines on the silicon rod can be used to judge whether the crystal rod is single crystal silicon or polycrystalline silicon.

[0003] The existing method for automatically detecting crystal lines is to take real-time pictures of growing silicon rod...

Claims

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