Radial polarizer for particle detection

A polarizer and detector technology, applied in instruments, measuring devices, scientific instruments, etc., can solve problems such as inability to achieve sensitive image quality
CN112969910AActive Publication Date: 2021-06-15KLA TENCOR CORP

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
KLA TENCOR CORP
Publication Date
2021-06-15

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A dark field inspection system may include an illumination source to generate an illumination beam; one or more illumination optics to direct the illumination beam to a sample at an off-axis angle along an illumination direction; a detector; one or more collection optics to generate a dark-field image of the sample on the detector based on light collected from the sample in response to the illumination beam; and a radial polarizer located at a pupil plane of the one or more collection optics, where the radial polarizer rejects light with radial polarization with respect to a reference point in the pupil plane corresponding to specular reflection of the illumination beam from the sample.
Need to check novelty before this filing date? Find Prior Art

Description

[0001] Cross References to Related Applications

[0002] This application asserts under 35 U.S.C. §119(e) that Jenn-Kuen Leong, Daniel Kavaldjiev, John Fielden, and Guoheng Zhao) U.S. Provisional Application Serial No. 62 / 767,246 entitled "PARTICLE DETECTION WITH IMPROVED RESOLUTION ON WAFER INSPECTION SYSTEM" filed on November 14, 2018 interest in the case, which is incorporated herein by reference in its entirety. technical field

[0003] The present invention relates generally to particle inspection, and more particularly to dark field particle inspection. Background technique

[0004] Particle inspection systems are commonly used in semiconductor processing lines to identify defects or particles on wafers such as, but not limited to, unpatterned wafers. As semiconductor devices continue to shrink, particle detection systems require a corresponding increase in sensitivity and resolution. A significant source of noise that can limit measurement sensitivity is surface s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More