Method for detecting back-surface soft damage density of silicon wafer

A silicon wafer surface and silicon wafer technology, which is applied in the field of detecting the soft damage density on the back of the silicon wafer, can solve the problems such as the difficulty of detecting the soft damage density on the back of the silicon wafer, and achieve the effect of ensuring product quality

Active Publication Date: 2019-12-27
TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of this, the present invention aims to propose a method for detecting the soft damage density on the back side of a s

Method used

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  • Method for detecting back-surface soft damage density of silicon wafer
  • Method for detecting back-surface soft damage density of silicon wafer
  • Method for detecting back-surface soft damage density of silicon wafer

Examples

Experimental program
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Effect test

Embodiment

[0037] 1. Select samples

[0038] Take three 6inch silicon wafers with a resistivity > 1Ω·cm, and number them as sample 1, sample 2 and sample 3 respectively. Sand blast the crystal direction of the 3 silicon wafers. During sand blasting, the raw material of the mortar is SiO 2 (The model is 3000#, the particle size is 5 μm), the mortar concentration is 9.7wt%, and the spraying pressure is 0.4Mpa.

[0039] 2. Thermal oxidation treatment

[0040] 1) Use the HQ300A-DF oxidation furnace tube produced by a leading company, raise the temperature of the oxidation furnace tube to the furnace entry temperature of 900°C, and click the back boat to exit the suspension paddle.

[0041] 2) Rinse the bubbler with pure water and refill the pure water. The amount of pure water added just reaches the mark on the upper side of the bubbler, and the bubbler cover is closed. Connect the bubbler line, put N 2 The branch is connected to the bubbler. Use a vacuum pen to place the samples neatl...

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PUM

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Abstract

The invention provides a method for detecting back-surface soft damage density of a silicon wafer. The method comprises the following steps of S1, thermal-oxidization processing; S2, corrosion, in which the silicon wafer obtained in the step S1 is placed in hydrofluoric acid for immersion; S3, dying, in which a chromium oxide solution is prepared, the silicon wafer obtained in the step S2 is immersed in the prepared chromium oxide solution for reaction; S4, washing with clean water; and S5, calculation. Fault is induced to be generated by thermal oxidization, an oxide layer is removed by corrosion, the fault is dyed by the chromium oxide solution, the fault occurring in an ultramicro damage layer is intuitively displayed under microscope, the method has the advantages of stability, reliability, high efficiency and convenience, a technical department can be helped to optimize a sand-blasting process or a special sand-blasting process is selected according to a client demand, daily production of a product also can be monitored, and the product quality is ensured.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a method for detecting soft damage density on the back side of a silicon wafer. Background technique [0002] Metal ion impurities in silicon wafers will significantly reduce the minority carrier lifetime and further affect the performance of silicon devices. Soft Back Damage is the mechanical damage to the back of the silicon wafer, so that the silicon wafer has extrinsic gettering ability, and these damages can be used as a trap for getting rid of impurities in the IC process to absorb Impurities. Sandblasting is a relatively common soft damage process on the back surface, which uses granular materials with a certain particle size (such as Al 2 o S3 The mortar formed by mixing with water is used to drive the mortar to blast the silicon wafers on the moving conveyor belt by air pressure, so as to form "soft" damage on the back of the silicon wafers. By ...

Claims

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Application Information

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IPC IPC(8): G01N21/84G01N1/32G01N1/30H01L21/66
CPCG01N21/84G01N1/32G01N1/30H01L22/12H01L22/24G01N2021/8461Y02P70/50
Inventor 刘九江周欢崔丽贾申齐禹纯郑耀张志鹏朱希明由佰玲
Owner TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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