Thermal reliability evaluating method for GaN-based HEMT device

Abstract

A thermal reliability evaluating method for a GaN-based HEMT device is disclosed. The transfer characteristic curve, the grid leakage current characteristic curve and the thermal resistance values of the GaN-based HEMT device under different high-low temperature thermal shock frequency are acquired, and the changing relation of the transconductance of the GaN-based HEMT device to be tested with increasing of thermal shock frequency can be obtained according to the transfer characteristic curve under different thermal shock frequency. The changing relation of the grid leakage current under a certain grid reverse voltage of the GaN-based HEMT device to be tested with increasing of thermal shock frequency can be obtained according to the grid leakage current characteristic curve under different thermal shock frequency. The changing relation of the thermal resistance values of the GaN-based HEMT device to be tested with increasing of thermal shock frequency can be obtained according to the thermal resistance values of the GaN-based HEMT device to be tested under different thermal shock frequency. In this way, the thermal characteristic changing relation of the GaN-based HEMT device to be tested can be obtained. The design and process problems can be discovered, and the thermal reliability of the device can be improved.

Description

technical field [0001] The invention relates to the technical field of reliability evaluation of GaN-based HEMT devices, in particular to a thermal reliability evaluation method of GaN-based HEMT devices. Background technique [0002] As the third-generation semiconductor device, GaN-based HEMT devices have higher frequency, higher operating temperature, higher breakdown voltage and higher power. They are used in military and civilian fields of high frequency, high voltage, high temperature and high power devices. It has broad application prospects. [0003] GaN-based HEMT devices use the polarization of GaN and AlGaN heterogeneous materials to form a band-bending triangular potential well at the interface, forming a two-dimensional electron gas with a high saturation electron velocity, which can be used as a high-frequency switch device. In the development of GaN-based HEMT devices, its thermal reliability is one of the important reasons that limit its large-scale applica...

AI Technical Summary

Problems solved by technology

For example, if the transconductance of the HEMT device is reduced and the gate leakage current is increased, the gate control capability of the GaN-based HEMT device is reduced, thereby affecting the reliability of its switching characteristics; The heat dissipation capability will be reduced, seriously reducing the reliability of its GaN-based HEMT devices

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