Direct white LED chip manufacturing method with high thermal stability
A LED chip, high thermal stability technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of LED light efficiency reduction, reliability reduction, poor thermal stability, etc., to improve the overall color temperature consistency and improve space color Uniformity, the effect of improving process integration
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Embodiment 1
[0055] see figure 1 , this embodiment 1 provides a highly thermally stable direct white light LED chip structure, which includes a sapphire substrate 11 , an epitaxial layer 12 , electrodes and pads 17 , and a fluorescent glass layer 16 . The epitaxial layer 12 is fabricated on the sapphire substrate 11, electrodes and pads 17 are fabricated on the epitaxial layer 12, and the fluorescent glass layer 16 is directly fabricated on the back of the sapphire substrate 11 through coating and low-temperature sintering process.
[0056] The direct white light LED chip manufacturing method of present embodiment 1, it comprises the following steps:
[0057] Step 1, obtaining a blue LED epitaxial layer 12 by epitaxial growth on the sapphire substrate 11;
[0058] Step 2: Coat fluorescent glass paste 13 with a thickness of 100 μm on the back of sapphire substrate 11 by screen printing, and adjust the uniformity of printing thickness by controlling the distance between screen screen plate ...
Embodiment 2
[0064] see figure 2 , this embodiment provides another highly thermally stable direct white LED chip structure, which includes a sapphire substrate 21, an epitaxial layer 22, electrodes and pads 23, and a fluorescent glass layer 28 (including a base 24). The epitaxial layer 22 is made on the sapphire substrate 21, the electrodes and pads 23 are made on the epitaxial layer 22, the fluorescent glass layer 28 is first made on the substrate 24 by coating and low-temperature sintering process, and then activated by surface plasma The bonding process bonds to the back of the sapphire substrate 21 .
[0065] The manufacturing method of the present embodiment comprises the following steps:
[0066] Step 1, on the sapphire substrate 21, obtain the epitaxial layer 22 of the ultraviolet LED by epitaxial growth, and then utilize chip processing technology (photolithography, etching, deposition, etc.) to make electrodes and pads 23 (p, n electrodes and gold-tin pads ), so as to obtain t...
Embodiment 3
[0079] refer to image 3 , This embodiment provides another highly thermally stable direct white LED chip structure, which includes a sapphire substrate 31, an epitaxial layer 32, electrodes and pads 33, and a fluorescent glass layer 38 (including a substrate 34). The epitaxial layer 32 is made on the sapphire substrate 31, the electrodes and pads 33 are made on the epitaxial layer 32, the fluorescent glass layer 38 is first made on the substrate 34 by coating and low-temperature sintering process, and then bonded by adhesive The process is bonded to the back of the sapphire substrate 31 .
[0080] The manufacturing method corresponding to this embodiment includes the following steps:
[0081] Step 1, on the sapphire substrate 31, obtain the epitaxial layer 32 of the blue LED by epitaxial growth, and then utilize chip processing technology (photolithography, etching, deposition, etc.) to make electrodes and pads 33 (p, n electrodes and gold-tin soldering Disk), so as to obta...
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