Patterning resolution enhancement combining interference lithography and self-aligned double patterning techniques

Abstract

A method for providing regular line patterns using interference lithography and sidewall patterning techniques is provided according to one embodiment. The method comprising may include producing regularly spaced parallel lines on a template using interference lithography techniques and then depositing sidewalls on the longitudinal sides of the regularly spaced parallel lines using sidewall patterning techniques. Various deposition and etching steps may also be included. The embodiments of the invention may provide regular line patterns with a line density half the interference lithography line density. Various lithography techniques may also be used to crop rounded connecting resulting from the sidewall patterning and/or to alter portions of the line pattern.

Description

BACKGROUND[0001]This disclosure relates in general to lithography techniques and, but not by way of limitation, to interference lithography in combination with self-aligned double patterning techniques among other things.[0002]Optical resolution for lithography is determined by Rayleigh's equation. For the state of the art ArF lithography systems, the optical resolution is limited to 63 nm half pitch (HP) with a numerical aperture (NA) of 0.93 and K1 factor at 0.3. There is a general push to provide lithography techniques that provide smaller and smaller resolutions.[0003]Immersion lithography has also been proposed. Immersion lithography techniques replace the usual air gap between the final lens and a wafer surface with a liquid medium that has a refractive index greater than one. In such systems, the resolution may be reduced by a factor equal to the refractive index of the liquid. Current immersion lithography tools use highly purified water for the immersion liquid, and can ach...

AI Technical Summary

Problems solved by technology

Immersion lithography, however, suffers from various manufacturing defects, such as, water marks, drying stains, water leaching, wafer edge peeling, and air bubbles that restrict full scale manufacturing efforts.

However, few breakthroughs have been reported making it an unlikely candidate as the technology of choice for the next generation lithography.

Various problems must be resolved before EUV lithography can be implemented; for example, low source power, contamination issues, and manufacturing and handling masks.

These challenges have limited EUV lithography as a viable solution to extendible next-generation lithography technique.

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