6results about How to "Improve exposure efficiency" patented technology

The invention discloses a data generation method of a photoetching pattern, an electron beam exposure system, a medium and a product, which are applied to the technical field of photoetching. The method is applied to an electron beam exposure system comprising an upper computer and a lower computer. The method comprises the following steps: receiving first original coordinate data and second original coordinate data of a layout transmitted by the upper computer; performing linear interpolation based on the first original coordinate data and the second original coordinate data to obtain a plurality of pieces of original intermediate coordinate data; respectively mapping the first original coordinate data, the second original coordinate data and each piece of original intermediate coordinate data into first mapping coordinate data, second mapping coordinate data and each piece of mapping intermediate coordinate data of a lower computer; and performing exposure operation based on the first mapping coordinate data, the second mapping coordinate data and the mapping intermediate coordinate data. The data transmission quantity between the upper computer and the lower computer can be reduced, the bandwidth occupation and delay of data transmission are reduced, and the exposure efficiency is improved while the exposure precision is guaranteed.

The utility model provides silicon wafer processing equipment which comprises a silicon wafer conveying device which comprises a conveying driving module and a bearing mechanism, the conveying driving module is connected with the bearing mechanism to drive the bearing mechanism to move, and a silicon wafer receiving position, a screen printing position and an exposure position are sequentially arranged along the movement track of the bearing mechanism; the silicon wafer screen printing device is used for finishing screen printing operation on the silicon wafer to be processed on the bearing mechanism at the screen printing position; the silicon wafer exposure device is used for completing exposure operation on the silicon wafer to be processed on the bearing mechanism at the exposure position, through the setting mode, both silk-screen operation and exposure operation can be directly completed on the bearing mechanism, the silicon wafer does not need to be transferred to other places, the transfer operation on the silicon wafer to be processed is reduced, and the production efficiency is improved. And the screen printing efficiency and the exposure efficiency are improved.

The embodiment of the application provides a communication package recommendation method, system, device and storage medium, the method comprises: calculating the activity value based on the page access time length, the page access times and the recent access time; in the case where the activity value is greater than the first preset threshold, query whether there is a package change record in the historical package information; in the case where there is no package change record in the historical package information, respectively, the statistical feature of the historical call information and the historical traffic information is calculated to obtain the call feature value and the traffic feature value; in the case where the call feature value is greater than the first threshold, and the traffic feature value is greater than the second threshold, the exposure weight of the communication package corresponding to the comprehensive package type in the exposure weight list is increased; at least one target communication package in the adjusted exposure weight list whose exposure weight is greater than the preset weight threshold is exposed in the preset network page. The scheme can adapt to different needs of users for personalized exposure of communication packages.

The invention relates to a negative developing photoresist containing hydrophobic resin as well as a preparation method and application of the negative developing photoresist. When the photoresist composition containing the hydrophobic resin is used for forming a film, the hydrophobic resin can be automatically separated to the surface of the film to form a protective layer. A photoresist film formed by the photoresist composition has low surface energy, a high receding contact angle (for example, greater than or equal to 85 degrees), a low sliding angle (for example, less than 15 degrees) and an advancing contact angle not exceeding 100 degrees, and is beneficial to reduction of exposure defects and improvement of exposure efficiency.

The invention discloses a parallel electron beam imaging photoetching system based on a micro electrostatic lens array and a control method, and aims to solve the technical problems that the existing electron beam photoetching efficiency is low, the system is complicated, and flexible zooming cannot be realized. The system sequentially comprises a unified electron source, a micro electrostatic lens array, an electron zooming focusing unit, a diaphragm plate and a vacuum sample table along the movement direction of an electron beam, and further comprises a driving circuit, the uniform electron source provides large-area uniform electron beams, the micro electrostatic lens array realizes on-off control of the electron beams through focusing / deflecting electrodes of each unit, the electronic zoom focusing unit adjusts imaging magnification through voltage ratio of multi-stage electrostatic electrodes, the diaphragm plate blocks the electron beams in an off state, and the driving circuit synchronously controls on-off and zoom magnification of the array. According to the invention, scanning-free and one-frame parallel exposure is realized, the imaging scaling can be flexibly adjusted, and the device has the advantages of high integration level, good stability, high exposure efficiency and strong adaptability, and can be used for high-end nano manufacturing scenes such as mask preparation, quantum devices, advanced packaging and the like.

The utility model belongs to the field of exposure machines, and particularly relates to a CCD (charge coupled device) dynamic compensation mechanism for wafer centering of a double-sided exposure machine, which comprises a bottom plate, a vertical plate is fixedly connected to the edge of the top of the bottom plate, a horizontal adjusting assembly is rotationally connected to one side of the vertical plate, a moving platform is fixedly connected to the surface of the horizontal adjusting assembly, and an angle adjusting assembly is fixedly connected to the top of the moving platform. Through the structural design of the horizontal adjusting assembly, after a customized voice coil motor A is electrified, a transmission rod A directly rotates in a permanent magnetic field through an electrified coil, intermediate transmission parts such as a gear and a screw rod are not needed, mechanical gaps and inertial delay are avoided, the transmission rod A drives a threaded rod to rotate while rotating, and a threaded cylinder is pushed to move by rotating a thread, so that the transmission rod A is driven to rotate. Therefore, the positions of the moving platform, the upper structure of the moving platform and the wafer are changed, so that the CCD dynamic compensation mechanism can quickly respond and adjust the position of the wafer, and the exposure efficiency of the wafer is improved.