153results about How to "Improve exposure efficiency" patented technology

The invention relates to a digital X-ray machine automatic exposure control method and device, and belongs to the technical field of digital radiography. The method mainly includes the steps of processing a pre-exposure image in secondary exposure and optimizing exposure parameters in a self-adaptive mode. The optimal threshold value is correspondingly found according to positions through gray stretch of the pre-exposure image, the image is divided into different areas, areas of interest with different components are extracted, the average gray level, the signal to noise ratio and the contrast ratio are calculated respectively, and then the main exposure parameters (mA, s and KV) are optimized in the self-adaptive mode; the precise time sequence is provided for the exposure process and data acquisition through a synchronous control unit, and the imaging effect is prevented from being influenced by time delay or antedating reaction. By the adoption of the multiple components, multiple target areas and multiple image standards, the exposure parameters are adjusted through a self-adaptive algorithm, and the top-quality image can be obtained through a small exposure dose when exposure is conducted under the synchronous control.

The invention provides a double stage exchange system adopting transition devices for wafer stages in a photoetching machine, which belongs to the technical field of semiconductor manufacturing equipment. The invention comprises a wafer stage running in the pretreatment position, a wafer stage running in the exposure position, and H-shaped driver units arranged in the pretreatment position and the exposure position respectively. The H-shaped driver units each consists of an X-axis linear motor and a Y-axis linear motor and are used for driving the wafer stages to move in the X-axis and Y-axis directions in the pretreatment position and the exposure position respectively. The technical proposal of the invention is that two transition devices are arranged between the stages and provided thereon with friction wheels. When the H-shaped driver units are aligned with the transition devices, the wafer stages are transferred from the pretreatment position to the exposure position under the frictional force of the friction wheels. The invention ensures the accurate connection of guide rails and reduces the complexity of the system structure.

The invention discloses a CMOS (Complementary Metal Oxide Semiconductor) image sensor and an exposure control method thereof. The method comprises the following steps: aiming at a pixel array, first row-to-row exposure and second row-to-row exposure are executed to obtain first image data and second image data, the exposure time interval of the same row of the first row-to-row exposure and the second row-to-row exposure is longer than a half light intensity period of change by odd number times; and image data in the same row of the first image data and the second image data is compound to obtain an output image. The CMOS image sensor comprises an exposure time sequence control circuit, row selecting circuits, a pixel array, a reading circuit and an image compound circuit, wherein the row selecting circuit executes the first row-to-row exposure and the second row-to-row exposure for the pixel array, the exposure time interval of the same row of the first row-to-row exposure and the second row-to-row exposure is longer than a half light intensity period of change by odd number times, and the image compound circuit compounds the first image data and the second image data to form an output image. By adopting the CMOS image sensor and the exposure control method thereof, yellow bands or light and shade strips in an image are eliminated.

A liquid crystal display and a manufacturing method are provided. A liquid crystal display according to an exemplary embodiment of the present invention includes a first substrate, a second substrate facing the first substrate, a field generating electrode disposed on at least one of the first substrate and the second substrate, an alignment layer disposed on the field generating electrode, and a liquid crystal layer interposed between the first substrate and the second substrate, including liquid crystal molecules and a second alignment polymer, wherein the first alignment polymer is formed by light-irradiating the alignment agent and the first alignment aids and the second alignment polymer is formed by light-irradiating the liquid crystal molecules and the second alignment aids, and the first alignment aids and the second alignment aids include a mesogen and a photo-polymerizable group coupled to the mesogen.

A liquid crystal alignment process comprises steps of: providing a first substrate and a second substrate to form a liquid crystal accommodating space therebetween; pouring a liquid crystal composition into the liquid crystal accommodating space, the liquid crystal composition comprising liquid crystal molecules, a first monomer material, and a second monomer material; applying a voltage difference to the first and second substrates for arranging the liquid crystal molecules at a pre-tilt angle; and exposing the liquid crystal composition by mixed multi-spectrum rays for polymerizing the first monomer material and the second monomer material to form at least one type of liquid crystal alignment polymer on opposite surfaces of the first and second substrates. The liquid crystal alignment process is capable of improving the efficiency of exposure procedure, reducing time to manufacture products, and is capable of solving the problems of high costs and waste pollution.

A maskless exposure method and a maskless exposure apparatus in which maskless exposure can be performed efficiently with high-directivity illumination light, while the exposure efficiency of solder resist can be improved. Blue-violet semiconductor lasers 12A emitting laser beams 1a with a wavelength of 405 nm and ultraviolet semiconductor lasers 12B emitting laser beams 1b with a wavelength of 375 nm are provided to irradiate a substrate 8 with the laser beams 1a and 1b whose optical axes are made coaxial. In this event, one and the same place on the substrate 8 is irradiated with the laser beams 1a and 1b a plurality of times. Thus, the variation in intensity of the laser beams 1a and 1b is averaged.

A dual-stage switching system for lithographic machine includes a wafer stage to be operated in an exposure station and another wafer stage to be operated in a pre-processing station. The two wafer stages are provided on a base, with four 2-DOF driving units capable of moving along X direction and Y direction being provided along the edge of the base, and the wafer stages being disposed in a space surrounded by the four 2-DOF driving units and suspended on an upper surface of the base by air bearings. Each of the 2-DOF driving units includes upper and lower linear guides and a guiding sleeve, with the upper and lower linear guides being installed vertical to each other in their corresponding guiding sleeve. Two adjacent 2-DOF driving units cooperatively drive the wafer stage) to move in the X direction and Y direction.

The invention discloses an exposure device and an exposure method. The device comprises a flexible substrate and a reel-to-reel transmission system, wherein the reel-to-reel transmission system is used for transmitting and fixing the flexible substrate; the exposure device also comprises a frontal-surface exposure system and a back-surface exposure system which are symmetrical about the axial direction of the flexible substrate, measurement systems which are corresponding to the frontal surface and the back surface of the flexible substrate respectively, and a master control system which is connected with the reel-to-reel transmission system, the frontal-surface exposure system, the back-surface exposure system and the measurement systems respectively. Through arranging the frontal-surfaceexposure system and the back-surface exposure system, the frontal surface and the back surface in the flexible substrate are exposed respectively; not only is the exposure efficiency improved; but also two different exposure systems are arranged respectively in the frontal-surface exposure system and the back-surface exposure system at the same time to realize the coarse exposure and the correction exposure on different exposed graphs on the flexible substrate; the exposure device can adapt to different deformation amounts and the exposure precision is greatly improved.

The invention relates to an image interference etching method and the etching system which uses two quartered acoustic-optic modulators and which is characterized in that it uses two quartered acoustic-optic modulators to bend the laser beam from the laser, when the acoustic-optic modulator dose not have the supersonic power, the laser can directly through the acoustic-optic modulator; when the acoustic-optic modulator have the supersonic power, the laser generates a first-order diffraction light witch can provide the illumination of level direction and vertical direction.

The invention relates to the technical field of display, in particular to an exposure method and an exposure apparatus for implementing the exposure method. A plurality of substrates coated by photoresist are arranged under one mask, parallel exposure light is adopted to irradiate the masks vertically; the photoresist of the top substrate is exposed by the parallel exposure light, the parallel exposure light penetrates the top substrate to continuously expose the photoresist of the substrates under the top substrate, and so on, till the exposure processes of the photoresist of all the substrates are completed. Since the photoresist of a plurality of substrates can be exposed synchronously, exposure efficiency is effectively improved; and meanwhile, since the number of the used masks is greatly reduced, exposure cost is reduced considerably; and since the same exposure light is fully utilized, energy consumption is reduced, and exposure cost is further reduced.

The invention discloses a workpiece platform position error measurement and pre-compensation method comprising the following steps of: measuring at multiple positions, calculating the influence on the height and the incline of the workpiece platform caused by fluctuation of a support platform according to the measuring results, calculating the influence on the angle of inclination of the workpiece platform caused by the shape of a reflecting surface at the side face of the workpiece platform, and compensating the workpiece platform with the obtained error data according to the position of the workpiece.

The invention relates to a double-sided exposure machine and a double-sided exposure method. The double-sided exposure machine comprises a worktable; the exposure machine comprises a first exposure component and a second exposure component each capable of movingalong the worktable, and forms an exposure area on the worktable; the loading machine comprises a loading platform; a first loading part and a second loading part are disposed on the loading platform, and the first loading part and the second loading part are disposed at a pitch; the loading platform is movable along the worktable and moves the first loading part or the second loading part to the exposure area. According to the arrangement of the movable first exposure component and second exposure component, the loading platform ismoved to the preset position during exposure, so that the first loading part or the second loading part is located in the exposure area, and then the first exposure component and the second exposurecomponent move toexpose the corresponding first component to be exposed or the second component to be exposed. Due to the simultaneous double-sided exposure, operations such as flippingare avoided, the exposure process and alignment are reduced, and the exposure efficiency and the exposure precision are improved.

The invention belongs to the technical field of semiconductors and discloses a mask plate-based secondary exposure method for an integrated circuit substrate. The method comprises the steps of S1, selecting a mask plate; S2, selecting two or three points on the mask plate to serve as measurement alignment mark points and performing marking; S3, performing primary exposure on the integrated circuit substrate; S4, performing alignment operation on the mask plate based on the selected two or three measurement alignment mark points; and S5, performing secondary exposure on the integrated circuit substrate. According to the method, the alignment operation is performed according to alignment based on obtained coordinate data after the integrated circuit substrate is subjected to the primary exposure, and then the integrated circuit substrate is subjected to the secondary exposure, so that the alignment operation time in the secondary exposure process is effectively shortened, the exposure efficiency is improved, and the production capacity is increased.

The invention discloses a TFT (thin-film transistor) processing technique for a thin-film transistor liquid crystal display. After washing with water and with ultrasonic wave, it is possible to remove impurity and oil stain on the surface of glass; by determining a temperature and humidity for photoresist application, adhesive can be well pasted to the surface of the glass, the problems of shedding and graphic defects are lessened for the glass; by starting an aerator to carry out preheating stabilization with ultraviolet before exposure, aeration efficiency can be improved for the glass; an acid solution that is a mixed solution of HCl and HNO3 may corrode and remove ITO (indium tin oxide) film without damaging the glass and photoresist; by determining etching temperature and time, it is possible to improve etching effect. The TFT for the thin-film transistor liquid crystal display processed by using the processing technique has the advantages of high production efficiency and high opening rate, and has great market potential and promising prospect.

The invention relates to a double-side exposure machine and a double-side exposure method. The double-side exposure machine comprises: a mounting frame; first and second exposure components arranged oppositely and capable of moving along the mounting frame; first and second stages capable of moving along the mounting frame. The double-side exposure method is applied to the double-side exposure machine. The first exposure component and the second exposure component form a first exposure zone in a first moving state; the first stage moves in the first exposure zone and performs exposure on a first part to be exposed; the second stage carries a second part to be exposed and forms a second exposure zone when in second moving state; the second stage moves in the second exposure zone and performs exposure on the second part to be exposed, and meanwhile, the first stage unloads or loads a next first part to be exposed; front and back exposure can be achieved with no need for reversing, and inaddition, the time of an exposure process is fully utilized, exposure efficiency is improved, and automatic operation can be achieved.

The present invention provides an integrated light source module unit for exposure and an exposure device having the light source module unit, which can ensure exposure performance capable of dramatically improving the microfabrication and the resolution of exposure patterns and, at the same time, has been improved so as to be economically substitutable for the light source of a conventional exposure device since low power consumption and, particularly, ultraviolet (UV) lights having a high-efficiency and high-output single wavelength and short wavelength are ensured by maximizing light outputpower by a combination of modules each comprising: a center light source part comprising a light source panel formed by mounting a plurality of unit UV light emitting diodes (LEDs) on a circuit boardin a matrix array structure, and an optical panel formed by providing a plurality of unit condensing lenses on the optical panels, which are arranged at light-emitting sides of the LEDs to face the light source panel, in a matrix array structure in a state in which the condensing lenses are eccentric toward a random reference center axial line, which passes the center of a UV LED array on the light source panel, with respect to a major optical axis at the positions respectively corresponding to the LEDs; and a plurality of peripheral light source parts radially and equally arranged in an inclined state so as to face a major light-emitting axis of the unit UV LED of the center light source part.

An array substrate, a fabrication method of the array substrate, and a display device including the array substrate are provided. The array substrate includes a first electrode (54) including a plurality of first sub-electrodes, a second electrode (3) including a plurality of second sub-electrodes, and an insulating layer (6) disposed between the first electrode (54) and the second electrode (3). A plurality of via holes (61) are formed in the insulating layer (6), and the plurality of the second sub-electrodes are electrically connected to the plurality of the first sub-electrodes correspondingly through the plurality of the via holes (61). The array substrate further includes a light compensating structure (4) disposed under an uneven portion of the insulating layer (6) to locally improve an exposure efficiency in a photolithographic process for forming the second electrode (3).

The present invention relates to photoetching technique field, concretely is an integrative direct write photolithography method. The method includes determining the target exposal graph, direct write by steps and continuous scan etch three steps; improving the exposal efficiency by using projecting lens with different multiplying power; and gapless jointing the graphs generated by the projecting lens with changed multiplying power by using co-axial optical position detection system. The method of the invention adopts a mixing method of direct scan and minification typesetting, generates smooth graph contour outline and improves efficiency of exposal.

The invention provides a virtual network service exposure method and device. The method comprises the steps that when a server sends a second access service request to a port of a virtual machine, source IP address information of an outer network terminal is taken as a mark and is added to the second access service request; the virtual machine is enabled to obtain a service data packet corresponding to the second access service request; the source IP address information is taken as the mark, is carried in the service data packet and is returned to the server; and the server sends the service data packet to the outer network terminal according to the source IP address information as the mark. According to the embodiment of the invention, the source IP address information of the outer network terminal is taken as the mark and is added to the second access service request and the corresponding service data packet, so a true IP mode is prevented from being employed when the IP and port ofthe physical server are mapped to or bridged with the port of the virtual machine, the true and available IP and port of the physical server are expanded, the demand of virtual network exposure service can be satisfied, and the virtual network service exposure efficiency is improved.