Integrative type direct-writing photo-etching method

A comprehensive, lithography technology, applied in the field of lithography, can solve the problems of long exposure time, slow processing speed and low resolution of a single wafer, and achieve the effect of improving the efficiency of exposure and efficiency

Active Publication Date: 2007-10-17
中夏芯基(上海)科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the laser direct writing method is point-by-point exposure, which uses a high-energy laser to directly generate graphics on a light-sensitive substrate. The disadvantage is that the processing speed is slow and the exposure time of a single wafer is long; the second method uses a computer-controlled pattern generator (SLM), The main problem is that the resolution is low, and limited by the shape of the unit pixel and the effective fill-in factor, it is difficult to make a continuous and smooth graphic outline

Method used

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  • Integrative type direct-writing photo-etching method
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  • Integrative type direct-writing photo-etching method

Examples

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Embodiment 1

[0032] Referring to Fig. 1, adopt the method of the present invention photoetching Z word,

[0033] (1) First, generate a zigzag target exposure pattern on the photosensitive element placed on the precision mobile platform. Assuming that the spatial pattern generator has 16×12 pixels that can be transformed independently, assuming that the target zigzag pattern to be generated is located in the case of a projection lens with a certain target magnification, the size of the space corresponds to the pattern of the spatial pattern generator as shown in the figure 1(a).

[0034] (2), step-by-step direct writing lithography

[0035] In the case of the projection lens of the target magnification, carry out spatial positioning and focusing on the target exposure figure, determine the first exposure figure in the target exposure figure, as shown in Figure 1 (b), and perform exposure; obtain the target exposure figure Outside the outline, other spaces have been exposed;

[0036] (3),...

Embodiment 2

[0039] The quadrilateral is photoetched by the method of the present invention.

[0040] Fig. 2, Fig. 3, Fig. 4 and Fig. 5 schematically show the method of the quadrilateral exposure pattern produced by the integrated direct writing technique with step-by-step and continuous-type according to the present invention.

[0041] (1), assuming that the spatial pattern generator has 4×4 pixels that can be transformed independently, the space size of the target pattern to be produced corresponds to the pattern of the spatial pattern generator of 16×24 final resolution projections, as shown in the figure 2.

[0042] (2), step-by-step direct writing lithography

[0043] Assume further that as shown in Fig. 3, Fig. 4 and Fig. 5, there are two groups of projection lenses with the magnification of the final resolution and the magnification of one-half of the final resolution to choose from. In practice, those skilled in the art should understand that there may be two or more projection l...

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Abstract

The present invention relates to photoetching technique field, concretely is an integrative direct write photolithography method. The method includes determining the target exposal graph, direct write by steps and continuous scan etch three steps; improving the exposal efficiency by using projecting lens with different multiplying power; and gapless jointing the graphs generated by the projecting lens with changed multiplying power by using co-axial optical position detection system. The method of the invention adopts a mixing method of direct scan and minification typesetting, generates smooth graph contour outline and improves efficiency of exposal.

Description

technical field [0001] The present invention relates to the technical field of photolithography, and specifically relates to printing and patterning on the following substrates, such as wafers, printed circuit boards, mask plates, flat panel displays, biological wafers, micromechanical electronic wafers, and optical glass plates. Background technique [0002] Photolithography is used to print a pattern of features on the surface of a substrate. Such substrates may include substrates used in the fabrication of semiconductor devices, various integrated circuits, flat panel displays (eg, liquid crystal displays), circuit boards, biochips, micromechanical electronic chips, optoelectronic circuit chips, and the like. Frequently used substrates are semiconductor wafers or glass substrates. Those skilled in the art will understand that the description herein also applies to other types of substrates known to those skilled in the art. [0003] During lithography, a wafer is placed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20H01L21/027
Inventor 刘文海刘军胡亦宁杨丹宁
Owner 中夏芯基(上海)科技有限公司
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