Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

TFT (thin-film transistor) processing technique for thin-film transistor liquid crystal display

A technology for liquid crystal displays and thin film transistors, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as low production efficiency, and achieve the effects of improving etching effect, increasing exposure efficiency, and reducing shedding phenomenon.

Inactive Publication Date: 2016-11-23
HEFEI JIARUILIN ELECTRONICS TECH
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the TFT processing technology of thin film transistor liquid crystal display has the problem of low production efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A TFT processing technology for a thin film transistor liquid crystal display, comprising the steps of:

[0030] (1) Cleaning of the glass substrate

[0031] First, the glass substrate is cleaned with toluene and grease, then the residual grease and toluene are cleaned with acetone, and then the glass substrate is dissolved with ethanol; the acetone on the surface is finally cleaned with water, and then cleaned with ultrasonic waves. The time is 10 minutes;

[0032] (2) drying

[0033] After cleaning, place the glass substrate in a purification oven for heating, the temperature of the purification oven is 110°C, and the drying time is 1h;

[0034] (3) Coated with photoresist

[0035] Then adjust the viscosity of the photoresist, and then apply the photoresist with the adjusted viscosity evenly on the glass substrate through the rubber roller. The temperature when the photoresist is covered is 19 ° C, and the humidity when the photoresist is covered is 60%. ;

[003...

Embodiment 2

[0045] A TFT processing technology for a thin film transistor liquid crystal display, comprising the steps of:

[0046] (1) Cleaning of the glass substrate

[0047] First, the glass substrate is cleaned with toluene and grease, then the residual grease and toluene are cleaned with acetone, and then the glass substrate is dissolved with ethanol; the acetone on the surface is finally cleaned with water, and then cleaned with ultrasonic waves. The time is 15 minutes;

[0048] (2) drying

[0049] After cleaning, place the glass substrate in a purification oven for heating, the temperature of the purification oven is 115°C, and the drying time is 2 hours;

[0050] (3) Coated with photoresist

[0051] Then adjust the viscosity of the photoresist, and then apply the photoresist with the adjusted viscosity evenly on the glass substrate through the rubber roller. The temperature when the photoresist is covered is 22 ° C, and the humidity when the photoresist is covered is 65%. ;

...

Embodiment 3

[0061] A TFT processing technology for a thin film transistor liquid crystal display, comprising the steps of:

[0062] (1) Cleaning of the glass substrate

[0063] First, the glass substrate is cleaned with toluene and grease, then the residual grease and toluene are cleaned with acetone, and then the glass substrate is dissolved with ethanol; the acetone on the surface is finally cleaned with water, and then cleaned with ultrasonic waves. The time is 20 minutes;

[0064] (2) drying

[0065] After cleaning, place the glass substrate in a purification oven for heating, the temperature of the purification oven is 120°C, and the drying time is 3 hours;

[0066] (3) Coated with photoresist

[0067] Then adjust the viscosity of the photoresist, and then apply the photoresist with the adjusted viscosity evenly on the glass substrate through the rubber roller. The temperature when the photoresist is covered is 25 ° C, and the humidity when the photoresist is covered is 70%. ;

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a TFT (thin-film transistor) processing technique for a thin-film transistor liquid crystal display. After washing with water and with ultrasonic wave, it is possible to remove impurity and oil stain on the surface of glass; by determining a temperature and humidity for photoresist application, adhesive can be well pasted to the surface of the glass, the problems of shedding and graphic defects are lessened for the glass; by starting an aerator to carry out preheating stabilization with ultraviolet before exposure, aeration efficiency can be improved for the glass; an acid solution that is a mixed solution of HCl and HNO3 may corrode and remove ITO (indium tin oxide) film without damaging the glass and photoresist; by determining etching temperature and time, it is possible to improve etching effect. The TFT for the thin-film transistor liquid crystal display processed by using the processing technique has the advantages of high production efficiency and high opening rate, and has great market potential and promising prospect.

Description

technical field [0001] The invention belongs to the field of processing technology of electronic components, more specifically, the invention relates to a TFT processing technology of a thin film transistor liquid crystal display. Background technique [0002] The manufacturing process of liquid crystal can be divided into two parts: the pre-process process and the post-process process. The pre-process process includes the manufacturing process of the thin film field effect transistor array glass substrate and the color filter glass substrate, and then pouring liquid crystal and sealing; the post-process process first needs to detect the liquid crystal cell, then assemble the backlight, optical components and drive electronic components, and finally for packaging. At present, the TFT processing technology of thin film transistor liquid crystal display has the problem of low production efficiency. Contents of the invention [0003] The problem to be solved by the present ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02H01L21/027H01L21/3213H01L21/336
CPCH01L21/02071H01L21/0274H01L21/32134H01L21/32139H01L29/66772
Inventor 罗文彬
Owner HEFEI JIARUILIN ELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products