TFT (thin-film transistor) processing technique for thin-film transistor liquid crystal display
A technology for liquid crystal displays and thin film transistors, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as low production efficiency, and achieve the effects of improving etching effect, increasing exposure efficiency, and reducing shedding phenomenon.
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Embodiment 1
[0029] A TFT processing technology for a thin film transistor liquid crystal display, comprising the steps of:
[0030] (1) Cleaning of the glass substrate
[0031] First, the glass substrate is cleaned with toluene and grease, then the residual grease and toluene are cleaned with acetone, and then the glass substrate is dissolved with ethanol; the acetone on the surface is finally cleaned with water, and then cleaned with ultrasonic waves. The time is 10 minutes;
[0032] (2) drying
[0033] After cleaning, place the glass substrate in a purification oven for heating, the temperature of the purification oven is 110°C, and the drying time is 1h;
[0034] (3) Coated with photoresist
[0035] Then adjust the viscosity of the photoresist, and then apply the photoresist with the adjusted viscosity evenly on the glass substrate through the rubber roller. The temperature when the photoresist is covered is 19 ° C, and the humidity when the photoresist is covered is 60%. ;
[003...
Embodiment 2
[0045] A TFT processing technology for a thin film transistor liquid crystal display, comprising the steps of:
[0046] (1) Cleaning of the glass substrate
[0047] First, the glass substrate is cleaned with toluene and grease, then the residual grease and toluene are cleaned with acetone, and then the glass substrate is dissolved with ethanol; the acetone on the surface is finally cleaned with water, and then cleaned with ultrasonic waves. The time is 15 minutes;
[0048] (2) drying
[0049] After cleaning, place the glass substrate in a purification oven for heating, the temperature of the purification oven is 115°C, and the drying time is 2 hours;
[0050] (3) Coated with photoresist
[0051] Then adjust the viscosity of the photoresist, and then apply the photoresist with the adjusted viscosity evenly on the glass substrate through the rubber roller. The temperature when the photoresist is covered is 22 ° C, and the humidity when the photoresist is covered is 65%. ;
...
Embodiment 3
[0061] A TFT processing technology for a thin film transistor liquid crystal display, comprising the steps of:
[0062] (1) Cleaning of the glass substrate
[0063] First, the glass substrate is cleaned with toluene and grease, then the residual grease and toluene are cleaned with acetone, and then the glass substrate is dissolved with ethanol; the acetone on the surface is finally cleaned with water, and then cleaned with ultrasonic waves. The time is 20 minutes;
[0064] (2) drying
[0065] After cleaning, place the glass substrate in a purification oven for heating, the temperature of the purification oven is 120°C, and the drying time is 3 hours;
[0066] (3) Coated with photoresist
[0067] Then adjust the viscosity of the photoresist, and then apply the photoresist with the adjusted viscosity evenly on the glass substrate through the rubber roller. The temperature when the photoresist is covered is 25 ° C, and the humidity when the photoresist is covered is 70%. ;
[...
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