4results about How to "Improve graphics quality" patented technology

The invention discloses a novel breast tissue marker, and relates to the technical field of medical instruments, the novel breast tissue marker comprises a metal core and a marker shell wrapping the outer surface of the metal core, the metal core is a non-magnetic metal core, and the marker shell has a compressed state when not absorbing water and an expanded state when being expanded after absorbing water. The marker shell is of a hard structure in a compressed state, and the marker shell is made of a flexible material in an expanded state. According to the arrangement, the metal characteristic of the metal core ensures that the marker is easy to find under X-ray; due to the non-magnetic characteristic of the metal core, noise generated during magnetic resonance is reduced, the developing property of magnetic resonance is improved, and the marker can be easily found during magnetic resonance; the marker shell has an expansion state of expanding after absorbing water, and can absorb body fluid after the whole marker is implanted into a human body, so that the marker shell absorbs water to expand, the volume of the marker shell is expanded, the developing performance of an ultrasonic image is improved, and the marker shell can be found more easily during ultrasonic examination.

The invention relates to a manufacturing method of a semiconductor structure. The method comprises the steps of providing a substrate; forming first mask patterns which extend along the first direction and are arranged at intervals along the second direction; forming second mask patterns, wherein the second mask patterns are arranged at intervals above the first mask patterns along the first direction; etching the first mask pattern according to the second mask pattern, and dividing the first mask pattern into first target patterns arranged at intervals along the first direction; forming third mask patterns which extend along the first direction and are arranged at intervals along the second direction; forming fourth mask patterns, wherein the fourth mask patterns are arranged at intervals above the third mask patterns along the first direction; and etching the third mask pattern according to the fourth mask pattern, and dividing the third mask pattern into second target patterns which are arranged at intervals along the first direction. The pattern density of the first target pattern and the second target pattern is reduced, and the pattern quality of the first target pattern and the second target pattern is improved.

The invention relates to a photoetching developing method and a developing device. The method comprises the following steps: providing a wafer with an exposed photoresist layer on the surface; whether the photoresist layer contains a surfactant or not is judged, if the photoresist layer contains the surfactant, pretreatment is carried out, and the pretreatment comprises wetting treatment on the photoresist layer before the developing solution is sprayed; if the photoresist layer does not contain the surfactant, the pretreatment is not carried out; and spraying a developing solution on the exposed photoresist layer and developing. In the prior art, after a photoresist layer is pretreated without a surfactant, water residues easily exist in the photoresist layer, and a developing solution can be prevented from reacting with the photoresist layer, so that the defects of photoresist residues and pattern missing are easily caused. Whether the photoresist layer needs to be pretreated is judged by judging whether the photoresist layer contains the surfactant or not, and the photoresist without the surfactant is not pretreated, so that incomplete development of the photoresist layer is prevented, and the defect of pattern missing is avoided.

The application discloses an optical waveguide device structure and a forming method thereof, and comprises the following steps: forming a waveguide functional layer, a hard mask layer and a photoresist pattern on a substrate; performing first etching on the hard mask layer through the photoresist pattern to form a hard mask pattern; using a first free radical to perform first processing on a first sidewall of the hard mask pattern with the photoresist pattern, so as to reduce the surface roughness of the first sidewall; performing second etching on the waveguide functional layer through the hard mask pattern after the photoresist pattern is removed to form a waveguide pattern; using a second free radical to perform second processing on a second sidewall of the waveguide pattern with the hard mask pattern, so as to reduce the surface roughness of the second sidewall; and removing the hard mask pattern. The application can significantly improve the smoothness of the sidewall of the waveguide pattern, thereby improving the key performance of the device.