Super-resolution dry-method surface plasma photo-etching method

Abstract

The invention discloses a super-resolution dry-method surface plasma photo-etching method, comprising the following steps of: 1) washing a substrate; 2) plating a layer of inorganic photoresist TeOx on the substrate; 3) plating a layer of metal thin film on a TeOx film layer; 3) repeatedly plating for a plurality of periods and finally plating one layer of inorganic photoresist; 5) placing a multi-layer film below a mask plate with a certain pattern and exposing; 6) carrying out dry-method developing on the exposed multi-layer film; and 7) finally removing the residual Ag layer. The super-resolution dry-method surface plasma photo-etching method disclosed by the invention has the advantages that a dry method is used to develop the inorganic photoresist so as to obtain the pattern with a regular and steep edge, the problems of the traditional inorganic photoresist that the edge of the pattern is irregular due to the solvent expansion effect and pattern lines are easy to collapse due to post-baking can be solved; and furthermore, a metal layer can amplify the transmission of development vector waves and reduce the light diffraction effect in the exposing process. Therefore, the quality of an SP photo-etched pattern is improved.

Description

technical field [0001] The invention belongs to the technical field of nano-lithography processing, and in particular relates to a surface plasmon super-resolution dry lithography method, which is a method for improving the quality of SP lithography patterns based on the dry lithography technology of inorganic photoresist materials . Background technique [0002] New Inorganic Photoresist TeO x (0<x<2) thin films have attracted extensive attention from scholars at home and abroad because of their suitable phase transition critical temperature. Deposited TeO x The film is metal Te dispersed in TeO 2 grid, after laser irradiation TeO 2 Te in the grid changes from an amorphous state to a crystalline state, and the Te grains segregate and reunite, so that the area irradiated by the laser is distributed in the TeO between the Te-based grains. 2 phases form a connected phase. TeO before and after laser irradiation x Thin films have different structures and thus have d...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: for the traditional organic photoresist has solvent expansion effect in the development process, which causes irregular edges, irregular shapes, and poor straightness of the figure, and the photoresist after development is post-baked. The process is very easy to cause problems such as pattern collapse. Based on this, it is proposed to use the inorganic photoresist TeOx, which has different etch resistance due to the change of its structure before and after laser irradiation, and can use IBE etching for patterning. Development, that is, dry development, is used to improve the quality of SP lithography patterns

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