Super-resolution dry-method surface plasma photo-etching method

A surface plasmon and super-resolution technology, which is used in microlithography exposure equipment, photosensitive material processing, photoengraving process exposure devices, etc., and can solve the problems of pattern collapse, irregular pattern edges, and irregular shapes.

Active Publication Date: 2012-08-15
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0005] The technical problem to be solved by the present invention is: for the traditional organic photoresist has solvent expansion effect in the development process, which causes irregular edges, irregular shapes, and poor straightness of the figure, and the photoresist after development is post-baked. The process is very easy to cause ...

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  • Super-resolution dry-method surface plasma photo-etching method
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  • Super-resolution dry-method surface plasma photo-etching method

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Embodiment Construction

[0035] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. But the following examples only limit to explain the present invention, and the protection scope of the present invention should include the whole content of claim, and promptly can realize the whole content of claim of the present invention to those skilled in the art through following embodiment.

[0036] Such as figure 1 As shown, the schematic diagram of the first step of the present invention; first select a silicon substrate or K9 slide 1, and polish its surface, and then carry out further cleaning and drying;

[0037] Such as figure 2 Shown, the production schematic diagram of the second step of the present invention; On the surface of the substrate 1, radio frequency reactive magnetron sputtering sputtering deposits a layer of TeO with a thickness of about 20nm. x film;

[0038] Such as image 3 Shown, the making schematic diagram ...

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Abstract

The invention discloses a super-resolution dry-method surface plasma photo-etching method, comprising the following steps of: 1) washing a substrate; 2) plating a layer of inorganic photoresist TeOx on the substrate; 3) plating a layer of metal thin film on a TeOx film layer; 3) repeatedly plating for a plurality of periods and finally plating one layer of inorganic photoresist; 5) placing a multi-layer film below a mask plate with a certain pattern and exposing; 6) carrying out dry-method developing on the exposed multi-layer film; and 7) finally removing the residual Ag layer. The super-resolution dry-method surface plasma photo-etching method disclosed by the invention has the advantages that a dry method is used to develop the inorganic photoresist so as to obtain the pattern with a regular and steep edge, the problems of the traditional inorganic photoresist that the edge of the pattern is irregular due to the solvent expansion effect and pattern lines are easy to collapse due to post-baking can be solved; and furthermore, a metal layer can amplify the transmission of development vector waves and reduce the light diffraction effect in the exposing process. Therefore, the quality of an SP photo-etched pattern is improved.

Description

technical field [0001] The invention belongs to the technical field of nano-lithography processing, and in particular relates to a surface plasmon super-resolution dry lithography method, which is a method for improving the quality of SP lithography patterns based on the dry lithography technology of inorganic photoresist materials . Background technique [0002] New Inorganic Photoresist TeO x (0<x<2) thin films have attracted extensive attention from scholars at home and abroad because of their suitable phase transition critical temperature. Deposited TeO x The film is metal Te dispersed in TeO 2 grid, after laser irradiation TeO 2 Te in the grid changes from an amorphous state to a crystalline state, and the Te grains segregate and reunite, so that the area irradiated by the laser is distributed in the TeO between the Te-based grains. 2 phases form a connected phase. TeO before and after laser irradiation x Thin films have different structures and thus have d...

Claims

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Application Information

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IPC IPC(8): G03F7/20G03F7/30
Inventor 罗先刚赵泽宇王长涛冯沁王彦钦刘利芹陶兴胡承刚黄成杨磊磊
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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