Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

System for switching benches of photo-etching machine silicon slice benches by transition continue device

A technology for exchanging systems and wafer stages, which is applied in the field of dual-stage exchanging systems for lithography machines, can solve problems such as system complexity and high guide rail docking accuracy, and achieve improved exposure efficiency, reduced complexity, and shortened working hours Effect

Active Publication Date: 2008-07-30
TSINGHUA UNIV +1
View PDF4 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the defects that the system in the prior art requires extremely high guide rail docking precision and the system has complexity, the present invention proposes a double-swap exchange system for photolithography machine silicon wafer tables using a transitional receiving device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System for switching benches of photo-etching machine silicon slice benches by transition continue device
  • System for switching benches of photo-etching machine silicon slice benches by transition continue device
  • System for switching benches of photo-etching machine silicon slice benches by transition continue device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The traditional step-and-scan projection lithography machine wafer stage is shown in Figure 2. There is only one wafer motion positioning system in the lithography machine, that is, only one wafer stage. Preparations such as leveling and focusing must be done on the same silicon wafer stage, and these tasks take a long time, especially alignment, due to the requirement of extremely high-precision low-speed scanning (typical alignment scanning speed is 1mm / s), so it takes a long time. In order to improve the exposure efficiency of the lithography machine, the present invention provides a double-stage exchange system for the silicon wafer stage of the lithography machine with a transition receiving device, which transfers the exposure preparation work such as leveling, focusing, and alignment to the preprocessing station. On the wafer stage, and work independently with the wafer stage of the exposure station at the same time, thus greatly shortening the working time of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a double stage exchange system adopting transition devices for wafer stages in a photoetching machine, which belongs to the technical field of semiconductor manufacturing equipment. The invention comprises a wafer stage running in the pretreatment position, a wafer stage running in the exposure position, and H-shaped driver units arranged in the pretreatment position and the exposure position respectively. The H-shaped driver units each consists of an X-axis linear motor and a Y-axis linear motor and are used for driving the wafer stages to move in the X-axis and Y-axis directions in the pretreatment position and the exposure position respectively. The technical proposal of the invention is that two transition devices are arranged between the stages and provided thereon with friction wheels. When the H-shaped driver units are aligned with the transition devices, the wafer stages are transferred from the pretreatment position to the exposure position under the frictional force of the friction wheels. The invention ensures the accurate connection of guide rails and reduces the complexity of the system structure.

Description

technical field [0001] The invention relates to a double-swap exchange system for silicon wafer tables of a lithography machine. The system is mainly used in semiconductor lithography machines and belongs to the field of semiconductor manufacturing equipment. Background technique [0002] In the production process of integrated circuit chips, the exposure transfer (photolithography) of the design pattern of the chip on the photoresist on the surface of the silicon wafer is one of the most important processes. The equipment used in this process is called a photolithography machine (exposure machine). The resolution and exposure efficiency of the lithography machine greatly affect the characteristic line width (resolution) and productivity of the integrated circuit chip. As the key system of the lithography machine, the motion accuracy and work efficiency of the silicon wafer ultra-precision motion positioning system (hereinafter referred to as the wafer stage) largely determ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20H01L21/68
Inventor 朱煜张鸣汪劲松徐登峰尹文生胡金春杨开明李广闵伟段广洪
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com