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94 results about "Laser interference lithography" patented technology

Method and system for manufacturing self-cleaning surface structure by adopting laser interference photolithography technology

InactiveCN101844272AParameters can be adjustedGood controllability of structural parametersPhotomechanical exposure apparatusMicrolithography exposure apparatusMicro nanoMicron scale
The invention relates to method and system for manufacturing a self-cleaning surface structure by adopting a laser interference photolithography technology. The method is characterized in that a plurality of coherent laser beams are combined by using a laser interference photolithography system, weakness modulation is carried out on light intensity distribution in an interference field, redistributed laser energy after modulation is used for ablating the surface of optics materials, and a micron-size or nanoscale dense cylindrical or conical anaglyph structure is generated within a large area range, thereby obtaining a super-hydrophobic film, greatly lowering the viscous phenomenon, benefiting to attachments including dusts, liquid and the like on the surface of the materials detaching from the surface of the materials and fulfilling a self-cleaning function. Without external materials, the self-cleaning fine structure generated on the surface of the materials is more stable and durable and can continuously regulate the period and the size from the nanoscale to the micron size by regulating an incidence angle of the interference photolithography system to enable dual structure of nanometer, micro and micro nanometer to become possible.
Owner:CHANGCHUN UNIV OF SCI & TECH +1

Laser interference lithography system with pattern locking function

ActiveCN103092002AWith graphics lock functionLock high speedPhotomechanical exposure apparatusMicrolithography exposure apparatusGratingBeam splitter
A laser interference lithography system with a pattern locking function comprises a laser, a reflector, a beam splitter, a substrate stage, a substrate and a pattern locking device. A laser beam emitted by the laser is split into an exposure beam and a reference beam by a spectroscope; the exposure beam passes through the beam splitter, and is reflected to the substrate on the substrate stage by the reflector to realize interference; the interference patterns can realize pattern record transfer by exposing the substrate; and the patterns are locked by the pattern locking device to prevent pattern drift during exposure. The pattern locking device includes a null phase meter, an electronic signal processing component, a controller, a driver and a phase modulation executing, wherein the null phase meter is used for measuring pattern phase drift; the pattern phase drift is fed back to the controller through the signal processing component; and the controller controls the phase modulation executer to realize phase locking through the driver. The laser interference lithography system provided by the invention has the advantages of simple structure, high pattern locking accuracy and the like, and is a key system for realizing large-area high-accuracy grating fabrication.
Owner:TSINGHUA UNIV +1

Method for preparing periodic nanostructure with high aspect ratio

The invention discloses a method for preparing a periodic nanostructure with high aspect ratio. The method is characterized by comprising the following steps of: selecting a polished substrate; coating a layer of photoresist with the thickness of greater than or equal to 300 nm on the surface of the polished substrate by a spin-coating method; depositing a SiO2 film with the thickness of 20 nm on the surface of the photoresist by a magnetron sputtering method; coating a layer of high-resolution photoresist with the thickness of 50 to 100 nm on the surface of the SiO2 film by the spin-coating method; exposing and developing the surface high-resolution photoresist by utilizing laser interference photolithography; hardening the three-layer adhesive structure in a heating plate or a baking oven; selecting a fluorine-base gas; transferring a surface photoresist pattern to the SiO2 layer by utilizing reactive ion etching; selecting and using oxygen; taking the SiO2 layer as a hard mask layer; and transferring a pattern on the SiO2 layer to the bottom photoresist by utilizing the reactive ion etching to obtain a photoresist pattern with high resolution and high aspect ratio. The method has low cost, large area of processed pattern area, and a broad application prospect in the aspects of the manufacturing and the application research of sub-wavelength gratings and photonic crystals.
Owner:INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI

Method and system for realizing phase shift in laser interference lithography

The invention discloses a method for shifting a phase in laser interference nano lithography. The method is characterized in that in two-beam or multi-beam laser interference lithography, two or more coherent laser beams are combined for interference, and one or more phase-shift locating systems are controlled to change the optical distance of an optical path and shift and locate the phase of interference graphics. In the method, the phase-shift locating system comprises a voltage source, a displacement driver and a reflector, and different voltages are applied to the displacement driver so that the reflector also moves along the axial direction thereof to shift and locate the phase. The phase-shift locating system can also push an optical wedge in a plane direction perpendicular to incoming light by changing the voltage of the voltage source or control an LCD (Liquid Crystal Display) in the plane direction perpendicular to the incoming light by changing the voltage of the voltage source or control the driver to draw optical fiber to shift the phase of the interference graphics by changing the voltage of the voltage source. The phase-shift method can detect the phase difference of the interference graphics, control the phase shift of the interference graphics by adopting feedback (such as phase locking) and lessen phase shift to more accurately locate the graphics.
Owner:CHANGCHUN UNIV OF SCI & TECH

Methods for manufacturing micro/nano scale pattern stamping die

The invention discloses methods for manufacturing a micro / nano scale pattern stamping die to solve the problems that a laser interference photo-etched die is not exquisite enough in pattern scale, the speed is too low when high-precision patterns are manufactured through electron beam photo-etching, and the electron beam photo-etching is not suitable for large-area manufacture, and belongs to stamping die finish machining methods. One of the methods sequentially includes the steps of electron beam photo-etching, primary dry etching, laser interference etching, secondary dry etching, nanometer stamping and micro-electroforming. The other method sequentially includes the steps of laser interference etching, primary dry etching, electron beam etching, secondary dry etching, nanometer stamping and micro-electroforming. The advantage that electron beam etching is exquisite in manufacture and the advantages that the laser interference etching is low in cost and large in width of a manufactured die are combined, nano scale patterns and micro scale patterns are manufactured at different positions of the stamping die, the expressive force of the manufactured patterns is far better than the expressive force of patterns manufactured through traditional laser interference etching, and the anti-counterfeiting capacity of holographic anti-counterfeiting marks and other products with stamped patterns is improved.
Owner:HUAZHONG UNIV OF SCI & TECH

Method and system for preparing filter membrane mesh structure by laser interference photoetching technology

ActiveCN101980083AParameters can be adjustedStructural parameters are controllablePhotomechanical exposure apparatusMicrolithography exposure apparatusMicro nanoBeam expander
The invention discloses a method and a system for preparing a filter membrane mesh structure by laser interference photo-etching technology. The system can generate images with different intervals by different exposure methods of the laser interference photo-etching technology. A photoetched image is generated by regulating and controlling light intensity distribution in an interference field by a specified light beam combination method, and ablating the surface of a processed material by using modulated redistributed laser energy. The system consists of a laser, a beam expander, a beam splitter, a reflecting mirror, a polaroid and a mechanism for clamping and regulating the optical elements and devices. By changing the relative arrangement position of the optical devices, an incident angle of a related light beam which is irradiated on the surface of a substrate material is changed so as to regulate parameters of a micro-mesh structure of the surface of the processed material. The system can realize adjustability of photo-etching characteristic sizes from nanometers to hundreds of microns. By optical phase shifting or mechanical shifting of a sample, repeated exposure or repeated exposure interpolation, a high-density micro-nano filter membrane mesh structure can be prepared.
Owner:CHANGCHUN UNIV OF SCI & TECH

Method for preparing micro-nano textures through ultrasonic vibration

The invention discloses a method for preparing micro-nano textures through ultrasonic vibration and belongs to a preparation method of silicon surface micro-nano textures. The method comprises the following steps: firstly, uniformly coating a layer of photo-etching glue on the surface of a substrate by using a glue homogenizer; then carrying out interferential exposure on the substrate with the photo-etching glue in a laser interferometer system to realize texturing treatment on the photo-etching glue; and finally machining the substrate in an ultrasonic machining system, removing the substrate material in an area which is not covered by the photo-etching glue, gradually increasing the removal depth along with the increase of the ultrasonic machining time, controlling exposure parameters of laser interference photo-etching and ultrasonic vibration machining parameters to prepare periodic micro-nano textures which are controllable in size and large in area. The method for preparing the micro-nano textures through ultrasonic vibration has the advantages that the method is pollution-free due to the adoption of ultrasonic vibration machining, simple to operate, free of damage to the photo-etching glue layer on the surface of the substrate and good in pattern transfer effect; by changing the size of a vibration tool, different areas can be machined; by means of the ultrasonic vibration, the machining accuracy is high and the surface quality is good; the substrate is relatively small in stress in the machining process.
Owner:CHINA UNIV OF MINING & TECH

Laser interferometric lithography system with application of blazed grating

ActiveCN105242499ANarrowing the line widthReduced Linewidth RequirementsPhotomechanical exposure apparatusMicrolithography exposure apparatusGratingLight energy
The invention discloses a laser interferometric lithography system with the application of blazed grating. The laser interferometric lithography system comprises a light source module, a beam spread collimation module, a multiple beam split and beam combination module and a substrate holder. The light source module comprises a coherent light source, a first lens, a second lens and blazed grating. A laser beam emitted from the coherent light source successively passes through the first lens and the second lens and then passes through a reflector to make a light path bend over, and light is illuminated on the blazed grating. A light beam with wave length being equal to first-order blaze wavelength after blazed grating diffraction passes through a small aperture to be emitted out, and then passes through the beam spread collimation module and the multiple beam split and beam combination module to be split into multiple coherent light beams. The multiple coherent light beams are simultaneously converged and illuminated onto the substrate surface on the substrate holder. The system provided by the invention has advantages of high efficiency of light energy utilization and long coherence length. Flexibility and tolerance for light path adjustment are enhanced, linewidth requirement of a laser light source is also reduced, and selection range of the laser light source is broadened.
Owner:XIAN TECHNOLOGICAL UNIV

Method for preparing low-friction and high-hardness artificial hip joint ball through surface patterning

The invention relates to a method for preparing a low-friction and high-hardness artificial hip joint ball through surface patterning. The low-friction and high-hardness artificial hip joint ball is made from a CO-Cr-Mo alloy material, and the method is characterized in that patterned dimple arrays are formed on the surface of the artificial hip joint ball, namely the patterned dimple arrays are made on the friction surface of the artificial hip joint ball through laser interferometric lithography to form a small temporary synovial fluid or tissue fluid storage device, and meanwhile the actual contact area between friction pairs is decreased and abrasive grains produced in the friction process are accommodated to achieve the friction-reducing purpose. The instantaneous high temperature of laser enables the grains to be refined, the material hardness is enhanced, and the artificial hip joint with low friction and high hardness is obtained. The low-friction and high-hardness artificial hip joint ball has good lubricating property and can reduce the friction effect between interfaces of the friction pairs of the artificial hip joint and reduce friction. In addition, the hardness is improved, the abrasion is reduced, and the friction and abrasion resisting performance of an existing artificial hip joint ball is optimized.
Owner:CHANGCHUN UNIV OF SCI & TECH

Method of adopting electrochemical deposition to prepare patterned orderly alpha-Fe2O3 nanoparticle array

A method of adopting electrochemical deposition to prepare a patterned orderly alpha-Fe2O3 nanoparticle array includes: adopting an electrochemical workstation, using ITO conductive substrate after laser interference photoetching as a working electrode, a saturated calomel electrode as a reference electrode, a high-purity iron sheet as a pair electrode and a mixed solution of FeCl2 and FeCl3 as an electrolyte, adopting a triphase electrode system to soak the working electrode, the pair electrode and the reference electrode in the electrolyte at the same time, and setting needed temperature for electrochemical deposition; adopting a timing current method to electrochemically deposit on the working electrode to obtain the patterned orderly alpha-Fe2O3 nanoparticle array having high dispersity. Double-beam single-exposure is utilized to pre-pattern the electrodes, and the nanoparticle array of a large-scale patterned orderly structure is prepared. A cathode electrodeposition method is used in the process of electrochemical deposition, equipment is simple, preparation cost is low, and high-temperature heating or annealing treatment is not needed; used chemicals are nontoxic and harmless, and the prepared patterned orderly alpha-Fe2O3 nanoparticle array is high in repeatability and stability.
Owner:CHANGCHUN UNIV OF SCI & TECH

Exposure beam phase measurement method in laser interference lithography and lithography system

The invention belongs to the technical field of optical instruments and meters, and discloses an exposure beam phase measurement method in laser interference lithography. The method comprises the steps: separating measuring light from an exposure light beam of laser interference lithography and inputting the measuring light into a laser phase measuring interferometer to carry out phase measurementon the exposure light beam of laser interference lithography; and introducing a reference light beam homologous with the laser interference lithography exposure light beam, inputting the reference light beam into the laser phase measuring interferometer, processing the reference light beam by the laser phase measuring interferometer to form an interference measurement light signal, and performingresolving to obtain the phase of the laser interference lithography exposure light beam. The invention discloses a laser interference lithography system. The system comprises the laser phase measurement interferometer, a controller and a phase modulator; the system adopts the exposure light beam phase measurement method in laser interference lithography, and the laser phase measurement interferometer is used for measuring whether the phase of the exposure light beam drifts or not; the controller controls the phase modulator to carry out phase modulation, the locking of exposure fringe phase drift is completed, and the manufacturing of a high-precision variable-period grating is achieved.
Owner:TSINGHUA UNIV +1
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