9 results about "Laser interference lithography" patented technology

The present disclosure provides a laser interference lithography method, comprising: performing interference exposure on a wafer coated with photoresist; and performing patterned flood exposure on the interference-exposed wafer, wherein performing the flood exposure comprises: determining a first light field distribution in the interference-exposed wafer; determining a light field distribution of a flood light source for the flood exposure as a second light field distribution based on the first light field distribution, an intended pattern distribution, and parameters of the flood light source for the flood exposure; and patterning the light field distribution of the flood light source based on the second light field distribution, and controlling the flood light source with the patterned light field distribution to perform flood exposure on the interference-exposed wafer, thereby forming the intended pattern distribution in the flood-exposed wafer.

Disclosed is a phase measurement device, comprising: a first wave plate, a first polarization splitting prism, a fourth wave plate, a retroreflector, a third wave plate, a reflector, a second wave plate, a polarizer, a second polarization splitting prism, a third polarization splitting prism, a first photoelectric detector, a second photoelectric detector, and a base, wherein the first to third polarization splitting prisms and the first and second photoelectric detectors are fixed on the base; the first to fourth wave plates are respectively arranged around the periphery of the first polarization splitting prism; the polarizer is arranged on an emitting surface of the third polarization splitting prism; the retroreflector is arranged on an outer side of the fourth wave plate; and the reflector is arranged on an outer side of the third wave plate. An interferometric signal is resolved to obtain a measurement light beam phase.

The application provides an N+1 laser interference lithography system, comprising: a light source module, which controls the exposure dose of a laser beam emitted by a laser by using an electrically controlled clock valve device, and controls the laser beam to be incident to a rotating light splitting module at 45°; the rotating light splitting module splits the amplitude of the laser beam to obtain N+1 coherent beams with similar energy, and modulates the spatial position of N edge coherent beams; a beam arm, which is used for controlling a 1 center coherent beam to be directly incident to a sample table capable of rotating by 360° and moving in three dimensions, and respectively controlling N edge coherent beams to be incident to the sample table from the same side or different sides at a specified incident angle with the 1 center coherent beam; and the sample table, which is placed with a substrate material, and a double-sided periodic or three-dimensional periodic micro-nano structure is prepared by converging the N+1 coherent beams. The system can flexibly control the light splitting ratio, the beam polarization state, the interference angle and the number of participating beams to obtain periodic structures with more parameters and pattern changes.

The present invention belongs to the technical field of surface enhanced Raman spectroscopy detection, and specifically discloses a SERS substrate based on a grating-coupled MIM structure, a preparation method thereof, and an application thereof. In the MIM structure, an Ag layer is selected as a SERS active layer, which solves the problem of non-repeatable substrate preparation caused by the random generation of "hot spots" when Ag particles are used in traditional manufacturing schemes; an SU8 layer is selected as an insulating layer in the MIM structure, which solves the problem of low interference field intensity caused by the low refractive index of the SiO2 layer when a SiO2 layer is used in traditional manufacturing schemes; and the grating structure is manufactured by laser interference lithography technology and displacement Talbot lithography technology, which solves the problems of high cost and low efficiency caused by the use of technologies such as electron beam lithography and focused ion beam lithography.

The invention provides an (N + 1)-beam laser interference photoetching system, which comprises a light source module for controlling the exposure dose of a laser beam emitted by a laser by using an electric control clock valve device and controlling the exposure dose to enter a rotary light splitting module at 45 degrees; the rotary light splitting module is used for carrying out amplitude division light splitting on the laser beams to obtain N + 1 coherent light beams with similar energy, and modulating the spatial positions of the N edge coherent light beams; the light beam arm is used for controlling one central coherent light beam to directly enter a sample table which can rotate by 360 degrees and move in a three-dimensional manner; and respectively controlling the N edge coherent light beams and the central coherent light beam to be incident to the sample table from the same side or different sides at a specified incident angle, a substrate material is placed on the sample table, and the N + 1 coherent light beams are converged, so that the double-sided periodic or three-dimensional periodic micro-nano three-dimensional structure is prepared. The system can flexibly regulate and control the splitting ratio, the light beam polarization state, the interference angle and the number of participating light beams so as to obtain a periodic structure with more parameters and pattern changes.

An exposure light beam phase measurement method for laser interference photolithography comprises: separating a measurement light from an exposure light beam and inputting light into a laser phase measurement interferometer to carry out phase measurement on the exposure light beam; inputting a reference light beam homologous with the exposure light beam into the laser phase measurement interferometer; processing the reference light beam to form an interference measurement optical signal; calculating to obtain the phase of the exposure light beam. A laser interference photolithography system using the method comprises a laser phase measurement interferometer, a controller and phase modulators, the laser phase measurement interferometer measures whether the phase of an exposure light beam drifts, the controller controls phase modulators to carry out phase modulation, to achieve locking of exposure stripe phase drift and manufacturing of a high-precision variable-period optical grating.

The invention belongs to the technical field of laser interference photoetching, and particularly relates to a processing device for increasing an electric conduction area in laser interference photoetching, which comprises a laser light source, a diaphragm, a shutter, a diffraction beam splitter, a collimating prism, a linear polarizer, a continuous neutral density optical filter and an aspheric condensing lens. Wherein the laser light source outputs stable single-wavelength Gaussian light, the diaphragm is used for controlling the diameter and the shape of a laser beam, the shutter controls the exposure dose through opening and closing, the light beam is divided into two pairs of + / -1-level diffracted light through the diffraction beam splitter, and after the diffracted light is collimated by the collimating prism, the polarizing film converts non-polarized light into linearly polarized light. The continuous neutral density optical filter is used for adjusting diffraction light power, and the aspheric condensing lens converges light beams to a focus. The prismatic micro-nano structure array can be prepared on the surface of the conductive material through the device, and the specific surface area of the material is increased, so that the transmission density of current in the material is increased, the conduction resistance of the material is reduced, and the conductive efficiency of the material is finally improved.

This invention proposes a method for optimizing the dose uniformity of laser interference lithography stitching based on Gaussian beam fitting, belonging to the field of ultra-precision micro / nano manufacturing technology. Addressing the stitching unevenness problem caused by beam distortion and finite boundary effects in large-area stepping interference lithography, this invention acquires actual interference light field images and performs global two-dimensional Gaussian fitting to accurately extract spot feature parameters. Based on this, a dose accumulation model under finite dot matrix scanning is constructed, and the optimal two-dimensional step displacement that can compensate for local interference troughs and macroscopic attenuation envelope is calculated through optimization. Simultaneously, an exposure dose constraint mechanism is introduced to limit the cumulative total light intensity within the development threshold range to prevent photoresist overexposure degradation caused by high overlap. Finally, the optimal parameters are output and used to control the positioning stage for precise exposure. This invention effectively overcomes the obvious gaps and energy distortion caused by traditional fixed-spacing stitching, achieving high-quality, seamless stitching manufacturing of large-area holographic gratings.

The invention discloses a processing device and method for increasing an electric conduction area through laser interference photoetching, and belongs to the technical field of laser interference photoetching. A processing device for increasing an electric conduction area through laser interference photoetching comprises a laser light source, a diaphragm is fixed behind the laser light source, a shutter is fixed behind the diaphragm, a diffraction beam splitter is fixed behind the shutter, a collimating prism is fixed behind the diffraction beam splitter, and the collimating prism is fixed behind the laser light source. A first linear polaroid, a second linear polaroid, a third linear polaroid and a fourth linear polaroid are respectively fixed behind the collimating prism; and the first linear polaroid, the second linear polaroid, the third linear polaroid and the fourth linear polaroid are positioned on the same plane and are arranged in a circumferential array. The prismatic micro-nano structure array is prepared on the surface of the conductive material, so that the specific surface area of the material is increased, the transmission density of current in the material is increased, the conduction resistance of the material is reduced, and the conductive efficiency of the material is finally improved.