Chemical amplification photoresist composition and application thereof in ultraviolet lithography

A composition and compound technology, applied in microlithography exposure equipment, photosensitive materials for optomechanical equipment, optics, etc., can solve problems such as insensitivity to light, lower resolution, rough line edges, etc., and achieve good roughness , high resolution, good line edge roughness

Active Publication Date: 2019-07-19
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of photoresist is usually insensitive to light, and the amount of photosensitive added is very large or even reaches 50% content
Moreover, the molecula

Method used

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  • Chemical amplification photoresist composition and application thereof in ultraviolet lithography
  • Chemical amplification photoresist composition and application thereof in ultraviolet lithography
  • Chemical amplification photoresist composition and application thereof in ultraviolet lithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Photoresist Composition 1: The host material is 35mg, the photoacid generator is 3.5mg, the solvent is propylene glycol methyl ether acetate 1mL.

[0035] Photolithography process conditions: after the surface of the silicon wafer is cleaned and activated by HMDS, the photoresist composition 1 is spin-coated on the silicon wafer, and soft-baked at 100°C for 180s. Interference exposure with 365nm laser at 2mW / s for 60s, post-baking condition at 70°C for 60s, developing condition as TMAH:H 2 O=2:1 develop for 10s, then rinse with water and blow dry with nitrogen.

[0036] figure 1 It is the 365nm laser interference lithography pattern of the photoresist composition 1, and this formula can obtain a 85nm line width and better contrast ratio lithographic pattern under the 365nm laser interference lithography condition.

Embodiment 2

[0038] Photoresist Composition 2: Host Material 20mg, the photoacid generator is 2mg, the solvent is propylene glycol methyl ether acetate 1mL.

[0039] Photolithography process conditions: after the silicon wafer surface is cleaned and HMDS is activated, the photoresist composition 2 is spin-coated on the silicon wafer, and soft-baked at 100° C. for 180 s. Exposure to 365nm laser direct writing near-field, post-bake at 70°C for 20s, develop with TMAH for 60s, wash with water and dry with nitrogen.

[0040] figure 2 For the photoresist composition 2, the laser direct writing near-field lithography pattern at 365 nm has a line width of 28 nm, which has exceeded the fine line width of the optical diffraction limit.

Embodiment 3

[0042] Photoresist composition 3:

[0043] The main material is 17.5mg, and 17.5 mg,

[0044] The photoacid generator is 3.5 mg, the anti-acid diffusing agent is tri-n-octylamine 0.35 mg, and the solvent is propylene glycol methyl ether acetate 1 mL.

[0045] Photolithography process conditions: after the surface of the silicon wafer is cleaned and activated by HMDS, the photoresist composition 3 is spin-coated on the silicon wafer, and soft-baked at 100° C. for 180 s. at 15mW / cm 2 Soft contact exposure on a UV exposure machine for 10s, post-baking conditions at 80°C for 60s, developing conditions as TMAH development for 60s, post-washing with nitrogen and drying.

[0046] image 3 It is a lithographic image of a line width of 2 microns obtained by exposing the photoresist composition 3 on an ultraviolet exposure machine. The composition can be used in ultraviolet exposure machine lithography, the resolution can be distributed in the order of hundreds of nanometers t...

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PUM

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Abstract

The invention relates to a chemical amplification photoresist compositions which are each prepared by taking a series of molecular glass compounds, which take tetraphenyl furan, tetraphenyl pyrrole, tetraphenyl thiophene, pentaphenylpyridine, tetraphenyl bisphenol A and calixarene bisphenol A, as cores as main body materials and taking a photoacid generator, a solvent and the like as auxiliary materials through combination. The photoresist composition is spin-coated on a substrate to prepare a photoresist film with uniform thickness, and the photoresist film is applied to ultraviolet light source exposure of 200-450nm, and is particularly suitable for far-field and near-field photoetching technologies, such as 365nm I line photoetching, 248nm deep ultraviolet photoetching, 436nm G line photoetching and the like, such as an ultraviolet exposure machine, 365nm laser direct writing near-field photoetching, 365nm laser interference photoetching and other ultraviolet photoetching technologies.

Description

technical field [0001] The invention relates to a variety of chemically amplified photoresist composition formulations with molecular glass as the main material, supplemented with photoacid generators, solvents, etc., which are applied to the exposure of 200-450nm ultraviolet light sources, especially for 365nm I-line lithography, 248nm deep ultraviolet lithography, 436nm G-line lithography and other far-field and near-field lithography technologies, such as ultraviolet exposure machine, 365nm laser direct writing near-field lithography, 365nm laser interference lithography and other ultraviolet lithography technologies . Background technique [0002] Ultraviolet lithography is a method commonly used in industry and scientific research to prepare submicron structures. It uses a mercury lamp light source or a 365nm laser light source. The light source is stable and low cost, and it is the best choice for submicron structure preparation technology. The exposure methods includ...

Claims

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Application Information

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IPC IPC(8): G03F7/004G03F7/039G03F7/20
CPCG03F7/004G03F7/039G03F7/2004
Inventor 杨国强袁华彭晓曼王亚飞王亮乾许箭郭旭东王双青
Owner INST OF CHEM CHINESE ACAD OF SCI
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