A
silicon-containing molecular glass
photoresist compound with high
etching resistance, a preparation method therefor, and use thereof are provided. The compound has simple molecular structure, controllable molecular weight, simple synthesis steps, and relatively high
thermal stability, resulting in no risk of
precipitation in baking and less proneness to deformation in
lithography; the negative molecular glass
photoresist provided has relatively good film-forming property, relatively high
thermal stability, resulting in less proneness to deformation during storage, and low
viscosity without the use of additional solvents for
dilution. The
photoresist prepared by the compound can give a uniform film on a substrate by spin-
coating, and the formula can be used in modern
lithography technologies such as 365 nm
lithography, 248 nm lithography, 193 nm lithography,
extreme ultraviolet lithography,
electron beam lithography, and the like. By
electron beam
exposure and development, the exposed pattern has relatively
high contrast, excellent resolution, and relatively good sensitivity.