An interferometric lithography system with controllable period and direction

Abstract

The invention discloses an interference lithography system with controllable period and direction, wherein the light of the light source is reflected by a first mirror and collimated into parallel beams through a beam expansion filter module, the beams are reflected twice by a second mirror and a third mirror and propagated vertically downward, and then are divided into two coherent beams with equal amplitude by a beam splitter mirror. The reflected beam is reflected three times by the fourth, fifth and sixth mirrors, and the transmitted beam is reflected twice by the seventh and eighth mirrors, and finally converges and interferes on the substrate. A mask plate locate above that substrate is closely attached to the substrate, and the substrate is place on the workpiece table. By moving the positions of the sixth and eighth mirrors laterally and adjusting the angles of the sixth and eighth mirrors, interference of different angles is achieved without changing the height of the substrate in the z direction. The computer control system realizes the horizontal movement and rotation of the sixth and eighth mirrors as well as the precise control of the worktable. The pixel-level array polarization grating with different periods can be prepared by the invention.

Description

technical field [0001] The invention belongs to the technical field of photolithography for semiconductor micro-nano processing, and in particular relates to an interference photolithography system with controllable period and direction. The system can be used to quickly realize the preparation of grating lines with a period of 100 nanometers. Background technique [0002] The interference phenomenon of light is the performance of the wave nature of light, and many optical measuring instruments use the interference principle of light. After the light interferes, the energy of the light is redistributed in space, resulting in the generation of interference fringes. [0003] In recent years, technologies such as projection exposure technology and electron beam have repeatedly broken the record of the smallest size. The development of micro-nano processing technology enables us to manufacture devices with smaller size, higher precision and more complex structure. Electron beam...

AI Technical Summary

Problems solved by technology

Electron beam exposure + ion beam etching is usually used to prepare integrated polarization gratings, but the problems of expensive equipment, long process cycle, low production efficiency, and inability to realize large-area preparation severely limit the development and application of polarization gratings.

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