The invention provides a Micro-LED
mass transfer method, relates to the technical field of Micro-
LED display, and is suitable for the fields of high-resolution display, vehicle-mounted display and the like. According to the method, high-precision transfer is realized through
stress field-
electric field coupling pickup and thermal field-flow field cooperative release in combination with optical closed-
loop control; a gradient interface energy
coating and a cross-scale elastic design are adopted, so that the damage rate of the
chip is reduced to 2.5 ppm;
deep learning defect detection and
laser repair are integrated, and the panel yield reaches 97.5%. Through multi-scale
adaptive control and intelligent path planning, the
transfer efficiency reaches 280,000 pieces per hour, heterogeneous integration of chips with multiple sizes of 5-50 microns is supported, the problems that a traditional method is low in precision, high in damage and poor in efficiency are solved, and the
mass production requirement is met. And the pixel-level positioning requirement of an ultra-
high resolution display panel of 8K and above can be met, and the industrial problem that the transfer precision of a micro-size
chip is insufficient is solved. And in combination with an in-situ
laser repairing technology, the total yield of the panel is further improved, and material waste and production cost are greatly reduced.