Laser machining method for simultaneously restoring and realizing N doping of graphene oxide microstructure

A laser processing method, graphene technology, applied in the direction of microstructure technology, microstructure device, manufacturing microstructure device, etc.

Inactive Publication Date: 2014-03-12
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is currently no method for micropatterning N-atom doping of graphene.

Method used

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  • Laser machining method for simultaneously restoring and realizing N doping of graphene oxide microstructure
  • Laser machining method for simultaneously restoring and realizing N doping of graphene oxide microstructure
  • Laser machining method for simultaneously restoring and realizing N doping of graphene oxide microstructure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Synthesize graphene oxide material and prepare graphene oxide film.

[0025] Graphene oxide materials were prepared by the modified Hummers method. In a 1000mL beaker, add 2g of flake natural graphite, 2g of sodium nitrate and 96mL of concentrated sulfuric acid with a mass concentration of 98% in an ice-water bath at 0°C. Keeping the temperature of the above system at 0°C, slowly add 12g of potassium permanganate (about 200mg / min). The entire reaction system was first kept at 0°C and stirred thoroughly for 90 minutes, then the system was heated to 35°C and stirred for 2 hours. Then within 30 min, slowly add 80 mL of deionized water to dilute the reaction system. After that, 10 mL of hydrogen peroxide (mass concentration: 30%) was added to the mixture, and then 200 mL of deionized water was added. After the addition, the stirring was continued for 10 min to obtain a suspension of graphite oxide. The suspension was centrifuged at high speed (16000rpm) for 10 minute...

Embodiment 2

[0042] (1) Synthesize graphene oxide materials to prepare FET device electrodes Figure 6 Middle (a).

[0043] The steps of synthesizing graphene oxide and preparing graphene solution are the same as in Example 1. However, it is necessary to make electrodes first. On the cover glass substrate 63, a transparent electrode of ITO62 is first vacuum sputtered as a grid, and PMMA64 with a thickness of 200nm is hung above the grid as an insulating layer. The graphene oxide solution was spin-coated on the surface of the substrate at 1000 rpm to obtain a graphene oxide film 67 with a thickness of 50 nm. Then the gold electrode 65 is prepared by combining mask and vacuum thermal deposition method. A metal wire mask with a diameter of 20 μm is used to vapor-deposit the gold film. The equipment used is a vacuum coating machine produced by Shenyang Sida Company. In the vacuum chamber, gold wire is used as the gold source, and a film thickness meter is used to monitor the thickness of the...

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Abstract

A laser machining method for simultaneously restoring and realizing N doping of a graphene oxide microstructure belongs to the technological field of micro-nano manufacturing technology, and comprises the following steps: a graphene oxide thin film is prepared on a substrate; a microcavity providing a machining atmosphere is formed on the grapheme oxide thin film; on an NH3 condition, laser direct writing machining is conducted on the graphene oxide thin film through a constructed laser micro-nano machining system to obtain a restored and N-doped graphene oxide microstructure. The invention integrates the characteristics of high precision, arbitrary shaping and the like of laser machining; an N-doped graphene oxide microstructure adopting an arbitrary shape is designed and obtained based on software editing, and arbitrary integration of components is realized; the restoring degree and doping concentration can be adjusted by adjusting the machining atmosphere, laser machining power, exposure time, machining step length, wherein the maximum doping concentration can be up to 10.3%. Types (including graphitized, pyridined and pyrroled nitrogen atoms) and contents of nitrogen atoms can be modulated through the adjustment of laser power.

Description

technical field [0001] The invention belongs to the technical field of micro-nano manufacturing, and in particular relates to a laser processing method for reducing and simultaneously realizing nitrogen-doped graphene oxide microstructure. Background technique [0002] Graphene is made of sp 2 A two-dimensional crystal with a perfect hexagonal lattice structure formed by the arrangement of hybridized carbon atoms, which is considered to be the basic structural unit of graphite morphological materials. The existence of long-range π-conjugated electrons in graphene makes it have excellent thermal, mechanical and electrical properties. Therefore, graphene has broad application prospects in the field of nanoelectronic devices. Intrinsic graphene is a zero-bandgap semiconductor, and this special energy band structure greatly limits the application of graphene in microelectronic devices. Therefore, precise control of the band gap, carrier type and concentration of graphene is th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 孙洪波郭莉张永来陈岐岱
Owner JILIN UNIV
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