Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing wafer-level full-color LED display array

A display array and wafer-level technology, applied in semiconductor/solid-state device manufacturing, instruments, electrical components, etc., can solve the limitation of LEDRGB full-color packaging unit size miniaturization, affect the pixel resolution of the final LED screen, full-color LED screen Problems such as the inability to reduce the pixel size achieve the effect of simplifying the manufacturing process

Active Publication Date: 2016-04-13
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the process of realizing the present invention, the applicant found that: due to the limitations of the solder process, the alignment accuracy of the die-bonding machine and the aperture of the conductive via hole, the size miniaturization of the LEDRGB full-color package unit is limited
It directly affects the pixel resolution of the final LED screen, so the pixel size of the full-color LED screen cannot be reduced, and the minimum size can only be about 1mm

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing wafer-level full-color LED display array
  • Method for preparing wafer-level full-color LED display array
  • Method for preparing wafer-level full-color LED display array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for manufacturing a wafer full-color LED display array. The method for manufacturing the wafer full-color LED display array includes the following steps that firstly, a GaN material grows on a substrate and a GaN epitaxial wafer is manufactured; secondly, multiple isolated LED structures are formed on the GaN epitaxial wafer through a deep etching technology; sixthly, the LED structures of different rows are directed and different fluorescent powder coats the back of the sapphire substrate to form a red, green and blue LED chip and thus, the wafer full-color LED display array is formed. According to the method for manufacturing the wafer full-color LED display array, the fluorescent powder coats the LED sapphire substrate row by row so as to directly achieve full-color display on the LED sapphire wafer and thus, the pixel size of the wafer LED display array is less than 500 microns.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a method for preparing a wafer-level full-color LED display array. Background technique [0002] LED display is a new type of information display media that developed rapidly in the world in the late 1980s. It uses LED light-emitting diodes to form a dot matrix module or pixel unit to form a large-area display screen. In addition to significant energy-saving effects, it also has reliability. High performance, long service life, strong environmental adaptability, high price-performance ratio, low cost of use, and large-area display, etc., have rapidly grown into mainstream products in the field of flat-panel display in just over ten years, and have gained recognition in the field of information display. widely used. [0003] In the past, LEDs were generally used for indoor and outdoor super-large screen displays, and now they are widely used in sports facilities, p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/50H01L33/62G09F9/33
CPCH01L21/0242H01L21/02458H01L21/0254H01L21/0262H01L21/3065H01L27/15H01L33/0066H01L33/50H01L2933/0016H01L2933/0041
Inventor 李璟杨华薛斌王国宏王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com