Multiple-piece guided mode method growth technology for sapphire wafer

Abstract

The invention discloses a multiple-piece guided mode method growth technology for a sapphire wafer. The multiple-piece guided mode method growth technology for the sapphire wafer comprises the following steps: S01, treating sapphire raw material; S02, charging; S03, vacuumizing and introducing argon; S04, heating up; S05, seeding and necking down; S06, widening shoulder; S07, performing isometrical growth; S08, cooling. According to the multiple-piece guided mode method growth technology for the sapphire wafer, an EFG (edge-defined film-fed growth) method is adopted, an optimal mould distribution and charging technique is designed, a scientific crystal growth control procedure is combined, reasonable circumferential and axial temperature gradients are applied, and multiple high quality flaky sapphire single crystals are grown.

Description

technical field [0001] The invention relates to the field of sapphire crystal growth, in particular to a multi-chip guided mode sapphire wafer growth process. Background technique [0002] Sapphire single crystal (α-Al 2 o 3 Single crystal) is a simple coordination type oxide crystal, which belongs to the hexagonal crystal system and the space group D63d2R3 mc. It has good mechanical, mechanical, thermal and electrical properties and stable physical and chemical properties. It is a high temperature resistant and wear-resistant It is a high-quality optical functional material with loss, corrosion resistance and wide light transmission band. It is widely used in laser, infrared, semiconductor, LED substrate, new energy technology, high-end luxury goods and other fields. [0003] Compared with other functional materials with similar properties, sapphire has low yield, slow growth rate, and poor production repeatability, resulting in too expensive prices, which greatly limit ...

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Problems solved by technology

[0007] For example: the invention patent (application number 201310045422) proposes the preparation process of growing multiple sapphire crystals by the guided mode method, which can realize the simultaneous and independent control of the growth of multiple crystals. 2 o 3 The block is not processed, and the vacuum degree in the single crystal growth furnace is controlled to be 1.0×10 in step 1. -3 ~1.0×10 -4 Pa, for high vacuum, a molecular pump is required, and the molecular pump and vacuum pump work continuously, which is costly and inconvenient to operate. At the same time, the vibration of the vacuum pump is large, which is easy to cause crystal growth cracks

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