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Technology for cleaning sapphire wafer

A sapphire wafer and process technology, applied in the direction of crystal growth, cleaning methods and tools, cleaning methods using liquids, etc., can solve problems such as incomplete cleaning, operator and environmental hazards, and corrosive equipment, and achieve a wide range of market economic value , less harm to equipment and operators, effective cleaning effect

Active Publication Date: 2015-01-07
LENS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem solved by the present invention is to provide a thorough, safe and environmentally-friendly sapphire wafer cleaning process to solve the existing sapphire wafer cleaning methods that use inorganic acid corrosion, strong oxidation, complexation, redox, and organic solvents. Incomplete cleaning, easy to corrode equipment and great harm to operators and the environment

Method used

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Examples

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Effect test

Embodiment

[0027] The wafer cleaned in this embodiment is a Ф50.8mm*0.3mm sapphire wafer, the deionized water resistance used is 18MΩ.cm, the circulating water intake: 3-5L / min, and the ultrasonic current is controlled at: 2.5±0.5A; cleaning workshop According to the requirements to reach the standard of a thousand-class clean room, clean according to the following specific process steps:

[0028] 1) Rough cleaning to degrease: heat the sapphire wafer to 80°C with a mass ratio of 10% sodium hydroxide solution, immerse the sapphire wafer at a throwing frequency of 20 times / min, and clean it in an ultrasonic environment of 28KHZ for 180 seconds.

[0029] 2) Fine cleaning to remove oil: Another cleaning tank is heated to 80°C with a sodium hydroxide solution with a mass ratio of 5%, immersing the sapphire wafer at a throwing frequency of 20 times / min, and cleaning in an ultrasonic environment of 28KHZ for 180 seconds .

[0030] 3) Spraying: Spray the degreased sapphire wafer with normal te...

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Abstract

The invention discloses a technology for cleaning a sapphire wafer. According to the technology, before coating and silk screen, the sapphire wafer is cleaned. The sapphire wafer is cleaned in an ultrasonic cleaner. The technology comprises the following steps of firstly, oil contamination removing, secondly, spraying, thirdly, dirty removing, fourthly, spraying, fifthly, residue removing; sixthly, spraying, seventhly, ultrasonic cleaning, eighthly, slow pull dehydration, and ninthly, drying and static electricity removing treatment after drying. According to the technology, using of strong acid and strong corrosive detergents is reduced, through separated multiple-time cleaning, the cleaning effect of the surface of the sapphire wafer is ensured, and the hazard to equipment and an operator is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of sapphire processing, and in particular relates to a cleaning process for a sapphire wafer. Background technique [0002] Before the existing sapphire wafer is coated and silk-screened, in order to ensure the quality of the coating and silk-screen, the surface of the wafer needs to be cleaned to remove dirt and impurities generated during the polishing process. [0003] The existing sapphire wafer cleaning technology usually uses inorganic acid corrosion, strong oxidation, complexation, redox, and organic solvent cleaning methods to remove the dirt and impurities caused by grinding and polishing, but more than 50% of them are still caused by cleaning. The waste products caused by silk screen printing and coating are caused by surface contamination during the cleaning and transportation of sapphire. At the same time, the above-mentioned cleaning process has higher requirements on the equipment, and require...

Claims

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Application Information

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IPC IPC(8): B08B3/12B08B3/02B08B3/08B08B3/10H01L21/02
CPCB08B3/02B08B3/08B08B3/10B08B3/12B08B2203/007C30B33/10
Inventor 周群飞饶桥兵汤功如
Owner LENS TECH
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