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Composition and method for polishing a sapphire surface

A technology for sapphire and sapphire wafers, which is applied in the directions of surface etching compositions, polishing compositions containing abrasives, chemical instruments and methods, and can solve problems such as contamination, surface damage of wafer surfaces, etc.

Inactive Publication Date: 2009-08-19
CABOT MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This aggressive abrasive material can cause severe surface damage and contamination of wafer surfaces

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] C-plane sapphire wafers (approximately 2 inch diameter) were polished on a Logitech CDP polisher for approximately 10 minutes. A wafer is mounted on a carrier, which is rotated at a carrier speed of about 65 rpm. A downward force was applied at about 11.5 psi, using a 22.5 inch diameter A100 polishing pad, which was rotated at a platen speed of about 69 rpm. The pad was conditioned by about 150 sweeps with deionized water, and 50 sweeps with deionized water between each polishing run.

[0022] At a slurry feed rate of about 160 milliliters per minute (ml / min), a 20 wt. % colloidal silica slurry (BINDZIL) adjusted to about pH 10 (i.e., by adding sodium hydroxide) CJ2-0, average particle size 110 nm) was applied to the wafer. A salt compound (calcium chloride or sodium chloride) is added to the silica slurry as a removal rate enhancing additive. Without additives, sapphire removal rates of about 250 to about 400 Angstroms per minute (A / min) were obtained. Addition o...

Embodiment 2

[0026] R-plane sapphire wafers (approximately 4 inch diameter) were polished on an IPEC 472 polisher for approximately 10 minutes. The wafer was mounted on a carrier, which was rotated at a carrier speed of about 57 rpm. A 22.5 inch diameter A100 polishing pad was spun at a platen speed of about 63 rpm with a downward force of about 16 psi. A 20% by weight slurry of colloidal silica ( CJ2-0, average particle size 110 nm) was applied to the wafer. The pad was conditioned by about 150 sweeps with deionized water, and 50 sweeps with deionized water between each polishing run.

[0027] Add about 1% salt compound (sodium chloride) to the silica slurry; use about 0.5% by weight of 2010 (approximately 60% by weight 1-hydroxyethylene-1,1-diphosphate in water, available from Solutia Inc.) was used as a comparative control in place of sodium chloride. The control removal rate was about 160 angstroms / minute, whereas the removal rate in the presence of the salt compound was about ...

Embodiment 3

[0031] C-plane sapphire wafers (approximately 2 inch diameter) were polished on a Logitech CDP polisher for approximately 10 minutes. The wafer was mounted on a carrier, which was rotated at a carrier speed of about 65 rpm. A 22.5 inch diameter A100 polishing pad was spun at a platen speed of about 69 rpm with a downward force of about 11.5 psi. At a slurry feed rate of about 200 milliliters per minute (mL / min), the solution adjusted to about pH 10 (using sodium hydroxide, except for runs using potassium chloride as an additive, in which case potassium hydroxide was used) 20% by weight colloidal silica slurry ( CJ2-0, average particle size 110 nm) was applied to the wafer. The pad was conditioned by about 150 sweeps with deionized water, and 50 sweeps with deionized water between each polishing run.

[0032] Salt compounds (sodium chloride, potassium chloride, sodium bromide, sodium iodide, sodium ascorbate, or sodium sulfate) are added to the silica slurry as removal rat...

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Abstract

An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a polishing slurry comprising an abrasive amount of an inorganic abrasive material such as colloidal silica suspended in an aqueous medium having a salt compound dissolved therein. The aqueous medium has a basic pH and includes the salt compound in an amount sufficient to enhance the sapphire removal rate relative to the rate achievable under the same polishing conditions using a the same inorganic abrasive in the absence of the salt compound.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Patent Application No. 60 / 658,653, filed March 4, 2005, which is incorporated herein by reference. technical field [0003] The present invention relates to improved compositions and methods of polishing sapphire surfaces. More particularly, the present invention relates to a method for enhancing the efficiency of sapphire removal of abrasive materials such as colloidal silica in a sapphire polishing process by adding a salt compound to the slurry. Background technique [0004] Silica abrasive materials are usually used for chemical mechanical polishing of metals, metal oxides, and silicon materials. In this application, abrasive silica particles are suspended in a liquid medium such as water, sometimes with the aid of surfactants as dispersants. Choi et al. in Journal of the Electrochemical Society, 151(3) G185-G189 (2004) have reported that adding sodium chloride, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00C09K13/00B24B37/04
CPCC09G1/02B24B37/044C03C19/00B24B37/0056C09K3/1463B24B37/00H01L21/461C03C15/00B44C1/22
Inventor 艾萨克·谢里安穆凯什·德塞凯文·莫根博格
Owner CABOT MICROELECTRONICS CORP
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