Sapphire wafer polishing solution
A technology of sapphire wafer and polishing liquid, which is applied in the field of polishing liquid, can solve problems such as deep traces of gemstone chips, immaturity, and stress concentration on the workpiece surface, and achieve the effects of promoting sufficient wetting, avoiding processing scratches, and ensuring polishing speed
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Embodiment 1
[0036] Sapphire wafer polishing fluid consists of the following components:
[0037] The solid content is 30~40wt% silica sol 20wt%, wherein the diameter of silica particles is 50-100nm;
[0038] Alumina 15wt% with a diameter of 100~200nm;
[0039] Dihydroxyethylethylenediamine 0.5wt%;
[0040] Sodium hexametaphosphate 3wt%;
[0041] Nonylphenol polyoxyethylene ether 1wt%, pH=6~7, HLB value 10;
[0042] The balance is deionized water.
[0043] Test results: Put the obtained polishing solution on the 16B double-sided polishing machine of Heriot, using the SUBA-600 polishing pad of ROHM-HAAS, the pressure is 6psi, and the rotation speed is 80rpm, and the C-direction 2-inch sapphire sheet is processed. Double-sided polishing, the flow rate of the polishing liquid is 8ml / min, and the polishing removal rate is 9μm / hr. The surface roughness after polishing is tested with a New view 5022B 3D surface profiler from Zygo Company, and Ra=10.2A is obtained. Observed under a 500X opti...
Embodiment 2
[0045] Sapphire wafer polishing fluid consists of the following components:
[0046] The solid content is 30~40wt% silica sol 30wt%, wherein the diameter of silica particles is 100-150nm;
[0047] Alumina 10wt% with a diameter of 80~120nm;
[0048] Diethylenetriamine 4 wt%;
[0049] Polyethylene glycol 0.5 wt%;
[0050] Nonylphenol polyoxyethylene ether 0.5wt%, pH=6~7, HLB value 13.3;
[0051] The balance is deionized water.
[0052] Test results: Put the obtained polishing solution on the 16B double-sided polishing machine of Heriot, using the SUBA-600 polishing pad of ROHM-HAAS, the pressure is 6psi, and the rotation speed is 80rpm, and the C-direction 2-inch sapphire sheet is processed. Double-sided polishing, the flow rate of polishing liquid is 8ml / min, and the removal rate of polishing is 8.3μm / hr. The surface roughness after polishing is tested with Zygo's New view 5022B 3D surface profiler, and Ra=5.7A is obtained. Observed under a 500X optical microscope, no scra...
Embodiment 3
[0054]Sapphire wafer polishing fluid consists of the following components:
[0055] The solid content is 30~40wt% silica sol 25wt%, wherein the diameter of silica particles is 80-100nm;
[0056] Alumina 20wt% with a diameter of 150~200nm;
[0057] Ethylenediamine 0.1wt%;
[0058] Pyridine 0.8 wt %;
[0059] Nonylphenol polyoxyethylene ether 0.7wt%, pH=6~7, HLB value 15;
[0060] The balance is deionized water.
[0061] Test results: Put the obtained polishing solution on the 16B double-sided polishing machine of Heriot, using the SUBA-600 polishing pad of ROHM-HAAS, the pressure is 6psi, and the rotation speed is 80rpm, and the C-direction 2-inch sapphire sheet is processed. Double-sided polishing, the flow rate of polishing liquid is 8ml / min, and the removal rate of polishing is 11μm / hr. The surface roughness after polishing is tested with Zygo's New view5022B 3D surface profiler, and Ra=6.2A is obtained. Observed under a 500X optical microscope, no scratches, no visible...
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