Sapphire wafer grinding and polishing method

A sapphire wafer, rough grinding technology, applied in the direction of grinding/polishing equipment, grinding machine tools, grinding devices, etc., can solve the problems affecting the difficulty of processing and achieve the effect of low surface roughness

Active Publication Date: 2015-10-28
东莞市中微力合半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The surface quality of the crystal surface produced by the previous

Method used

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  • Sapphire wafer grinding and polishing method
  • Sapphire wafer grinding and polishing method
  • Sapphire wafer grinding and polishing method

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Embodiment 1

[0029] The sapphire polishing wafer polishing method provided by the present invention specifically includes four processes, namely rough grinding, intermediate grinding, fine grinding and polishing. In this embodiment, the high-hardness micropowder used in coarse grinding, medium grinding and fine grinding is boron carbide, and the particle size of boron carbide is preferably W40, W7 and W1.5 standard micropowder respectively. In the process of actual use, high hardness micropowder can also be Choose silicon carbide or diamond. In this embodiment, glycerol is selected as the suspending agent, and sodium hydroxymethylcellulose is selected as the dispersing agent. Of course, the suspending agent can also choose one or more of polyacrylamide, polyacrylic acid, sodium polyacrylate or ethylene glycol according to needs; the dispersing agent can also choose sodium carboxymethylcellulose, sodium hydroxymethylcellulose, hydroxyl One or more of ethyl cellulose sodium, sodium alginate...

Embodiment 2

[0041] The present invention also provides another specific embodiment for detailed description. The program specifically includes four processes, namely rough grinding, medium grinding, fine grinding and polishing. In this embodiment, the particle diameters of the boron carbide micropowders used in coarse grinding, medium grinding and fine grinding are preferably W40, W7 and W3.5 standard micropowders respectively. The grinding liquid is configured according to the formula listed in Table 4 and named Z-W40, Z-W7 and Z-W3.5 respectively. The silicon dioxide polishing liquid adopts a typical commercial polishing liquid. The special chemical polishing fluid of Zhongwei Lihe is preferred.

[0042]Table 5 lists another embodiment of the present invention, from grinding to polishing, and it takes 2.9 hours to complete. The common sapphire polishing scheme listed in Table 6 takes 5 hours from grinding to polishing. In the commonly used plan in Table 6, the first process of the p...

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Abstract

The invention relates to the technical field of grinding and polishing of sapphire wafers, in particular to a sapphire wafer grinding and polishing method. The polishing of the sapphire wafers is finished by four stations of a rough grinding station, a medium grinding station, a finish grinding station and a polishing station, wherein the rough grinding station, the medium grinding station and the finish grinding station respectively adopt high-hardness micro powder with particle sizes of 26-43 microns, 3-9 microns and 0.2-3 microns as abrasives; de-ionized water, a dispersing agent and a suspending agent are added to prepare boron carbide hydrous sol as grinding liquid; in the previous grinding, small-particle-size grinding sands are used for grinding the sapphires, so that the sapphire wafers obtain more excellent machined surfaces, that is, the Ra value and the TTV are relatively lower, and the needed time of reaching the preset target Ra and TTV of the sapphires in the machining process is shortened; and as the method, provided by the invention, is used, the sapphire polishing process time can be controlled within 120-180 minutes, the pass percent of the wafers prepared in batches is higher than 90%, and the surface roughness is low to 0.5 nm.

Description

technical field [0001] The invention relates to the technical field of grinding and polishing of sapphire wafers, in particular to a grinding and polishing method of sapphire wafers. Background technique [0002] Sapphire is a single crystal material with good light transmission and thermal conductivity. At the same time, due to its excellent temperature resistance (melting point as high as 2200 ° C) and ultra-high hardness (Mohs hardness as high as 9.0, second only to the hardness of 10 Diamond), sapphire single crystal is often used in the guidance window of missiles in the military industry, the surface of precision instrument panels, and the surface of high-end watches. Recently, sapphire single crystal has begun to be used as the screen of high-end mobile phones, which has aroused the enthusiasm of merchants and consumers. However, due to the very low efficiency of polishing the sapphire single crystal plane and the high cost, the consumer market for sapphire mobile pho...

Claims

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Application Information

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IPC IPC(8): B24B37/08B24B37/04B24B7/22
CPCB24B7/228B24B37/042B24B37/044B24B37/08
Inventor 朱联烽田多胜
Owner 东莞市中微力合半导体科技有限公司
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