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Annealing method applied to sapphire processing

A processing process, sapphire technology, applied in chemical instruments and methods, single crystal growth, crystal growth and other directions, can solve the problems of incomplete removal of gemstone stress, lower gem wafer yield, complicated temperature control procedures, etc., and achieve effective removal of products. Stress, considerable economic benefits, the effect of simple operating procedures

Active Publication Date: 2014-03-19
ZHEJIANG SHANGCHENG SCI&TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the current sapphire processing process, some of the commonly used annealing processes are heating and cooling in stages, the temperature control program is complicated and the cycle is lengthy; some of them do not completely remove the stress generated by the gemstone during processing, resulting in poor post-processing. These annealing processes or Is it an increase in production costs or a reduction in the yield of gemstone wafers?

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A method of annealing used in sapphire processing, consisting of the following steps:

[0024] Step 1: Place the sapphire crystal in the annealing furnace and close the furnace cavity; vacuumize the furnace cavity to remove the air and impurities mixed in it, and continuously fill it with high-purity nitrogen for protection, and the nitrogen flow rate is stable at 5L / min;

[0025] Step 2: Gradually raise the temperature to 1450°C for 8 hours, and the heating rate is 3°C / min. At this heating rate, the crystal is heated evenly and reaches the set temperature.

[0026] Step 3, keeping the temperature at 1450°C for 8 hours;

[0027] Step 4: Set the temperature to drop slowly, the cooling speed ratio is 1.25°C / min, and the program sets the temperature to drop from 1450°C to 250°C for 16 hours. After reaching 250°C, the program is closed, and the furnace is still continuously filled with nitrogen, and the temperature is lowered to 150°C. Turn off the nitrogen, and turn on th...

Embodiment 2

[0029] The difference from Example 1 is that the flow rate of nitrogen gas is stable at 6 L / min. According to the applicant's research, when the flow rate of nitrogen gas is 6L / min, the phenomenon of gas turbulence and turbulence is less, and at the same time, it can provide the best fluid heating and cooling environment. Turbulence and turbulence phenomena can cause roughness and unevenness on the crystal surface, which is not conducive to stable stress relief.

Embodiment 3

[0031] The difference from Example 1 is that the flow rate of nitrogen gas is stable at 10 L / min. The applicant found that the gas flow rate of 10L / min has faster heating and cooling efficiency, but it will generate turbulence and turbulence, and only when the volume of the furnace cavity is more than 300L, the turbulence and turbulence phenomena are small.

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PUM

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Abstract

During sapphire processing, grinding causes relatively large stress, and consequently the angularity of a product is increased and the polishing difficulty is substantially increased. The invention aims at the above disadvantages in the prior art and provides a convenient practical annealing method applied to sapphire processing, and the method is mainly used for sapphire wafers subjected to cutting and grinding. By performing the annealing treatment on the sapphire wafers, the processing stress during cutting and grinding can be effectively removed; and the processing stress of the wafers employing the method for annealing is basically eliminated, the annealing of the wafers is uniform, the angularity of the wafers subjected to annealing is small, and the later-period polishing processing is facilitated.

Description

[0001] technical field [0002] The invention relates to an annealing method used in sapphire processing. technical background [0003] The composition of sapphire is aluminum oxide (Al2O3), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds, and its crystal structure is a hexagonal lattice structure. It is often used in A-Plane, C-Plane and R-Plane. Due to the wide optical transmission band of sapphire, it has good light transmission from near ultraviolet (190nm) to mid-infrared. Therefore, it is widely used in optical components. It has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, high melting point (2045 ° C), so it is often used as a material for optoelectronic components, but sapphire It is a rather difficult material to machine. [0004] Artificially grown sapphire has good wear resistance, and its hardness is second only to diamond, reac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/02C30B29/20
Inventor 吴云才
Owner ZHEJIANG SHANGCHENG SCI&TECH
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