Efficient C-oriented sapphire polishing solution and preparation method thereof

A polishing liquid and sapphire technology, applied in the field of polishing liquid, can solve the problems of affecting the surface quality and easy loss, and achieve the effect of improving the leveling efficiency, improving the efficiency and shortening the polishing time.

Inactive Publication Date: 2015-09-09
JIANGSU SINO KRYSTALS OPTROINCS
View PDF7 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method has a limitation. Because the surfactant has a certain lubricating effect, it can only be added in a...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Efficient C-oriented sapphire polishing solution and preparation method thereof
  • Efficient C-oriented sapphire polishing solution and preparation method thereof
  • Efficient C-oriented sapphire polishing solution and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Prepare five polishing solutions A, B, C, D, E:

[0033] Weigh the first particle size silica sol, the second particle size silica sol, surfactant, complexing agent and water according to the weight ratio, add 0.1g N-acylamino acid salt to 590g, 490g, 565g, 540g, 515g water respectively Surfactant, after stirring, add 0g, 500g, 125g, 250g, 375g of the first particle size silica sol with a solid content of 40% and a particle size of 20nm, and then add 400g, 0g, 300g, 200g, 100g after stirring evenly The solid content is 50%, and the particle size is the second particle size silica sol of 90nm. After stirring evenly, 10g of amine trimethylene phosphate complexing agent is added respectively, and after stirring evenly, it is a suspension that the total solid content of the silica sol is 20%. Among them, the solid content of the first silica sol is 0%, 20%, 5%, 10%, and 15%, and then the pH is adjusted to 11.3 with sodium hydroxide solution or potassium hydroxide solution, ...

Embodiment 2

[0039] Prepare five polishing solutions A, B, C, D, E:

[0040]Weigh the first particle size silica sol, the second particle size silica sol, surfactant, complexing agent and water according to the weight ratio, add 0.1g N-acyl amino acid salt to 590g, 490g, 515g, 540g, 565g water respectively Surfactant, dissolve completely, add 400g, 0g, 100g, 200g, 300g of silica sol with a solid content of 50% and a particle size of 80nm after stirring evenly, add 0g, 500g, 375g after stirring evenly , 250g, 125g solid content is 40%, particle size is the second particle size silica sol of 200nm, after stirring well, respectively add 10g amine trimethylene phosphate complexing agent, form the silica sol total solid content after stirring well is 20% suspension, wherein, the solid content of the first silica sol is 20%, 0%, 5%, 10%, 15%, and then adjust the pH to 11.3 with sodium hydroxide solution or potassium hydroxide solution, and configure five parts of solid content It is 20% polishi...

Embodiment 3

[0046] Prepare four polishing solutions A, B, C, D:

[0047] Weigh the first particle size silica sol, second particle size silica sol, surfactant, complexing agent and water according to the weight ratio, add 0.02g, 0.1g, 1g, 9g to 565g, 565g, 564g, 556g of water respectively N-acyl amino acid salt surfactant, add 125g solid content respectively after stirring and be 40%, the particle size is the first particle size silica sol of 20nm, after stirring, respectively add 300g solid content and be 50%, particle size is The second particle size silica sol of 90nm, after stirring evenly, respectively add 10g of amine trimethylene phosphate complexing agent, form the suspension that the total solid content of silica sol is 20% after stirring, wherein, the solid content of the first silica sol is 5%, then adjust the pH to 11.3 with sodium hydroxide solution or potassium hydroxide solution, and prepare four polishing solutions A, B, C, and D with a solid content of 20%.

[0048] The ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an efficient C-oriented sapphire polishing solution and a preparation method thereof. The polishing solution contains the following components by weight percent: 0.6-80% of silica sol with first particle size, 0.6-80% of silica sol with second particle size, 0.002-0.9% of a surfactant, 0.05-5% of a complexing agent and the balance of water. The preparation method comprises the steps of: completely dissolving the surfactant in water and uniformly stirring; adding the silica sol with first particle size and the silica sol with second particle size, and stirring uniformly to prepare a suspension; adding the complexing agent into the suspension, and stirring uniformly; regulating the pH value to be 7-13. According to the polishing solution prepared by combining two types of silica sol with different particle sizes, on the premise of ensuring relatively high cutting rate in a C-oriented sapphire polishing process, the flattening efficiency is greatly improved, so that a ground sapphire wafer quickly achieves a flat and smooth mirror-surface effect; therefore, the polishing time is shortened and the efficiency is improved.

Description

technical field [0001] The invention relates to the field of polishing fluids, in particular to a high-efficiency C-oriented sapphire polishing fluid and a preparation method thereof. Background technique [0002] Sapphire processing in the current market is mainly divided into three parts: cutting, grinding, and polishing. Among them, the polishing process plays a decisive role in the final surface quality of sapphire wafers. Due to its special crystal structure, C-oriented sapphire has stronger chemical activity than A-oriented sapphire, so surface quality problems such as pits, orange peel, and pitting are prone to occur during the polishing process. To solve this phenomenon, the traditional method is A certain amount of surfactant is added to improve the concave-convex selectivity of polishing, thereby increasing the planarization efficiency and improving the flatness of the polished surface. Concave-convex selectivity means that there are few active agent molecules in ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 沈建新周涛
Owner JIANGSU SINO KRYSTALS OPTROINCS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap