Polishing solution for chemically mechanical polishing single-crystal magnesium oxide substrate

A magnesia-based, chemical-mechanical technology, applied in the direction of polishing compositions containing abrasives, chemical instruments and methods, and crystal growth, can solve the problems of difficulty in obtaining high-quality substrate surfaces, low polishing removal rate, and complex polishing process etc. to achieve the effect of low cost, high polishing removal rate and low surface roughness

Inactive Publication Date: 2010-06-30
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the existing complex polishing process, low polishing removal rate, difficult to obtain high-quality substrate surface, and high cost problems, thereby providing a high removal rate for single crystal magnesium oxide substrate polishing, Polishing fluid with small damage layer and low cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0009] Embodiment 1: Prepare 1000 grams of polishing liquid. Take 20.wt% SiO 2 500 grams of hydrosol, the particle size of the abrasive is 20nm; 2 The abrasive concentration of the hydrosol was diluted to 10.wt%. Under vigorous stirring, add 0.06 g of 1,2,4-triazole; after the 1,2,4-triazole is completely dissolved, adjust the pH value of the polishing solution to 2.0 with hydroxyethylidene diphosphonic acid; perform a polishing test .

[0010] Carry out a chemical mechanical polishing test on a single-sided magnesium oxide abrasive sheet on a polishing machine with a prepared polishing liquid: the polishing pressure is 280g / cm 2 , the rotational speed of the polishing disc is 100r / min, the flow rate of the polishing liquid is 20ml / min, and the polishing time is 20 minutes. Use AFM to measure the surface roughness of the polished single crystal magnesium oxide substrate, the scanning area is 5μm×5μm, and the measurement result is Ra=0.2nm; use SartoriusCP225D precision ele...

Embodiment 2

[0011] Embodiment 2: Prepare 1000 grams of polishing liquid. Take 20.wt% SiO 2 500 grams of hydrosol, the particle size of the abrasive is 85nm; 2 The abrasive concentration of the hydrosol was diluted to 10.wt%. Under vigorous stirring, add 0.06 g of 1,2,4-triazole; after the 1,2,4-triazole is completely dissolved, adjust the pH value of the polishing solution to 2.0 with hydroxyethylidene diphosphonic acid; perform a polishing test .

[0012] Carry out a chemical mechanical polishing test on a single-sided magnesium oxide abrasive sheet on a polishing machine with a prepared polishing liquid: the polishing pressure is 280g / cm 2 , the rotational speed of the polishing disc is 100r / min, the flow rate of the polishing liquid is 20ml / min, and the polishing time is 20 minutes. Use AFM to measure the surface roughness of the polished single-crystal magnesium oxide substrate, the scanning area is 5μm×5μm, and the measurement result is Ra=0.4nm; SartoriusCP225D precision electro...

Embodiment 3

[0013] Embodiment 3: Prepare 1000 grams of polishing liquid. Take 20.wt% SiO 2 500 grams of hydrosol, the particle size of the abrasive is 85nm; 2 The abrasive concentration of the hydrosol was diluted to 10.wt%. Under vigorous stirring, 0.06 g of benzimidazole was added; after the benzimidazole was completely dissolved, the pH value of the polishing solution was adjusted to 3.0 with aminotrimethylene phosphonic acid; a polishing test was carried out.

[0014] Carry out a chemical mechanical polishing test on a single-sided magnesium oxide abrasive sheet on a polishing machine with a prepared polishing liquid: the polishing pressure is 280g / cm 2 , the rotational speed of the polishing disc is 100r / min, the flow rate of the polishing liquid is 20ml / min, and the polishing time is 20 minutes. Use AFM to measure the surface roughness of the polished single crystal magnesium oxide substrate, the scanning area is 5μm×5μm, and the measurement result is Ra=0.3nm; use SartoriusCP225...

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PUM

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Abstract

The invention relates to a polishing solution for chemically mechanical polishing single-crystal magnesium oxide substrate, belonging to polishing solution used for chemically mechanical polishing, in particular to the field of the polishing solution for chemically mechanical polishing single-crystal magnesium oxide. The polishing solution has the pH value of 1.5-7.0 and comprises the components as follows by weight percent: 0.5-30% of grinding material, 0.0001-1% of inhibitor, 0.001-10% of complexing agent and balance deionized water, wherein the grinding material of the polishing solution has the grain diameter of 10-500nm and is selected from SiO2, ZrO2, Al2O3, TiO2, MgO or CeO2 hydrosol; the complexing agent of the polishing solution is selected from organic acid, organic acid salt, inorganic acid or inorganic acid salt which contains phosphorus oxygen double bonds; and the inhibitor of the polishing solution is selected from compound containing five-membered ring. The polishing solution has high material removing rate and low surface roughness of a polished sample, and ensures the polished sample not to have the defects of scratch, pits and the like on the surface; and furthermore, the polishing solution is simple and convenient for preparation and low in cost.

Description

technical field [0001] The invention belongs to a polishing liquid for chemical mechanical polishing, in particular to the field of polishing liquid for chemical mechanical polishing of a single crystal magnesium oxide substrate. Background technique [0002] At present, magnesium oxide substrate is one of the main substrate materials most commonly used for high-temperature superconducting thin films of high-frequency microwave devices, and it is also an important high-temperature superconducting thin-film substrate that can be industrialized at present. Studies have shown that the surface roughness and surface defects of the polished magnesium oxide substrate have a great influence on the morphology and properties of the deposited yttrium barium copper oxide (YBCO) film. The YBCO film deposited on the surface of magnesium oxide substrate with surface roughness less than 1nm and greater than 1.6nm, its critical current density Jc value will be different by 2 to 3 times; the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C30B33/00
Inventor 康仁科王科金洙吉郭东明董志刚
Owner DALIAN UNIV OF TECH
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