Polishing liquid for sapphire substrate, and preparation method thereof

Abstract

The invention discloses a polishing liquid for a sapphire substrate. The polishing liquid is composed of the following components, by weight: 50-70 parts of deionized water, 20-40 parts of nano-grade silica hydrosol, 4-6 parts of graphene microchip, 4-6 parts of an active agent, 3-5 parts of stearic acid, 3-5 parts of glycol, 0.1-0.3 parts of tungstate, 1-2 parts of theophylline, 1.5-2.5 parts of flatting micro-powder wax, 4-6 parts of nano-grade titanium carbide, 1.5-2.5 parts of epoxy soybean oil, 2-4 parts of diphenyl silandiol, 2-4 parts of potassium phosphotungstic, 1-2 parts of methyl methacrylate, 0.4-0.6 parts of ethylenediamine, 0.4-0.6 parts of malonic acid, and 0.2-0.5 parts of polyvinylpyrrolidone. According to the polishing liquid, graphene microchips are added into a traditional silica sol, such that polishing removing rate can be effectively improved, and polishing liquid pH stability is ensured. With the polishing liquid, technical problems of low polishing rate and low efficiency of traditional polishing liquids are solved, and the polishing liquid is more environment-friendly.

Description

technical field [0001] The invention relates to the technical field of sapphire crystal material processing, in particular to a polishing liquid for a sapphire substrate and a preparation method thereof. Background technique [0002] Sapphire single crystal (Sapphire), also known as white gem, the molecular formula is Al 2 o 3 , transparent, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and chemical corrosion resistance, high infrared transmittance, and good wear resistance The hardness is second only to diamond, with a Ta Mok's grade of 9, and it still has good stability at high temperatures, with a melting point of 2030°C, so it is widely used in industry, national defense, scientific research and other fields, and is increasingly used as Manufacturing materials for parts in high-tech fields such as solid-state lasers, infrared windows, substrates for semiconductor chips, ...

AI Technical Summary

Problems solved by technology

Such as Chinese patent (application number is 03141638.1) "Grinding process of optical sapphire crystal substrate", which mainly includes process steps such as rough grinding, fine grinding and polishing. Although it can effectively reduce the surface roughness of sapphire, the diamond abrasive used in it is During the polishing process, it is easy to damage the surface layer of the material, causing deep scratches and the dispersion stability of the polishing liquid is poor

Polishing sapphire with silica sol can achieve a very low surface roughness Ra<0.5nm, but its polishing rate is too slow