Polishing liquid for sapphire substrate, and preparation method thereof

A sapphire substrate, polishing liquid technology, applied in polishing compositions containing abrasives, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of slow polishing rate, low surface roughness, scratched polishing liquid dispersion stability and other problems to achieve the effect of ensuring stability, solving low polishing rate and improving polishing removal rate

Inactive Publication Date: 2015-11-04
ANHUI DENUO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such as Chinese patent (application number is 03141638.1) "Grinding process of optical sapphire crystal substrate", which mainly includes process steps such as rough grinding, fine grinding and polishing. Although it can effectively reduce the surface roughness of sapphire, the diamond abrasive used in it is During the polishing process, it is easy to damage the surface layer of the material, causing deep scratches and the dispersion stability of the polishing liquid is poor
Polishing sapphire with silica sol can achieve a very low surface roughness Ra<0.5nm, but its polishing rate is too slow

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] A polishing solution for sapphire substrates, made of the following components in parts by weight: 60 parts of deionized water, 30 parts of nano-silica hydrosol, 5 parts of graphene microchips, 5 parts of active agent, hard 4 parts of fatty acid, 4 parts of ethylene glycol, 0.2 parts of tungstate, 1.5 parts of theophylline, 2 parts of extinction micronized wax, 5 parts of nanometer titanium carbide, 2 parts of epoxy soybean oil, 3 parts of diphenylsilanediol, 3 parts of potassium phosphotungstate, 1.5 parts of methyl methacrylate, 0.5 parts of ethylenediamine, 0.5 parts of malonic acid, and 0.3 parts of polyvinylpyrrolidone.

[0017] The above-mentioned graphene microsheets are grown in a three-dimensional honeycomb manner (like diamond ore), and the four valence electrons of each carbon atom form covalent bonds and are bound, which cannot form a directional mobile electron flow, so It cannot conduct electricity. After the generation, the graphene carbon crystal is grou...

Embodiment 2

[0021] A polishing solution for sapphire substrates, made of the following components in parts by weight: 70 parts of deionized water, 20 parts of nano-silica hydrosol, 6 parts of graphene microchips, 4 parts of active agent, hard 5 parts of fatty acid, 3 parts of ethylene glycol, 0.3 parts of tungstate, 1 part of theophylline, 2.5 parts of extinction micronized wax, 4 parts of nano-titanium carbide, 2.5 parts of epoxy soybean oil, 2 parts of diphenylsilanediol, Potassium phosphotungstate 4 parts, methyl methacrylate 1 part, ethylenediamine 0.6 part, malonic acid 0.4 part, polyvinylpyrrolidone 0.5 part.

[0022] The above-mentioned graphene microsheets are grown in a three-dimensional honeycomb manner (like diamond ore), and the four valence electrons of each carbon atom form covalent bonds and are bound, which cannot form a directional mobile electron flow, so It cannot conduct electricity. After the generation, the graphene carbon crystal is ground by wet nano-grinding metho...

Embodiment 3

[0026] A polishing solution for sapphire substrates, made of the following components in parts by weight: 50 parts of deionized water, 40 parts of nano-silica hydrosol, 4 parts of graphene microchips, 6 parts of active agent, hard 3 parts of fatty acid, 5 parts of ethylene glycol, 0.1 part of tungstate, 2 parts of theophylline, 1.5 parts of matting micronized wax, 6 parts of nano-titanium carbide, 1.5 parts of epoxy soybean oil, 4 parts of diphenylsilanediol, Potassium phosphotungstate 2 parts, methyl methacrylate 2 parts, ethylenediamine 0.4 part, malonic acid 0.6 part, polyvinylpyrrolidone 0.2 part.

[0027] The above-mentioned graphene microsheets are grown in a three-dimensional honeycomb manner (like diamond ore), and the four valence electrons of each carbon atom form covalent bonds and are bound, which cannot form a directional mobile electron flow, so It cannot conduct electricity. After the generation, the graphite carbon crystal is ground by wet nano-grinding method ...

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PUM

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Abstract

The invention discloses a polishing liquid for a sapphire substrate. The polishing liquid is composed of the following components, by weight: 50-70 parts of deionized water, 20-40 parts of nano-grade silica hydrosol, 4-6 parts of graphene microchip, 4-6 parts of an active agent, 3-5 parts of stearic acid, 3-5 parts of glycol, 0.1-0.3 parts of tungstate, 1-2 parts of theophylline, 1.5-2.5 parts of flatting micro-powder wax, 4-6 parts of nano-grade titanium carbide, 1.5-2.5 parts of epoxy soybean oil, 2-4 parts of diphenyl silandiol, 2-4 parts of potassium phosphotungstic, 1-2 parts of methyl methacrylate, 0.4-0.6 parts of ethylenediamine, 0.4-0.6 parts of malonic acid, and 0.2-0.5 parts of polyvinylpyrrolidone. According to the polishing liquid, graphene microchips are added into a traditional silica sol, such that polishing removing rate can be effectively improved, and polishing liquid pH stability is ensured. With the polishing liquid, technical problems of low polishing rate and low efficiency of traditional polishing liquids are solved, and the polishing liquid is more environment-friendly.

Description

technical field [0001] The invention relates to the technical field of sapphire crystal material processing, in particular to a polishing liquid for a sapphire substrate and a preparation method thereof. Background technique [0002] Sapphire single crystal (Sapphire), also known as white gem, the molecular formula is Al 2 o 3 , transparent, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and chemical corrosion resistance, high infrared transmittance, and good wear resistance The hardness is second only to diamond, with a Ta Mok's grade of 9, and it still has good stability at high temperatures, with a melting point of 2030°C, so it is widely used in industry, national defense, scientific research and other fields, and is increasingly used as Manufacturing materials for parts in high-tech fields such as solid-state lasers, infrared windows, substrates for semiconductor chips, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/304
CPCC09G1/02H01L21/304
Inventor 赫更民
Owner ANHUI DENUO CHEM CO LTD
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