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Preparation method and application of nano-semiconductor photocatalyst

A nano-semiconductor, photocatalyst technology, applied in chemical instruments and methods, physical/chemical process catalysts, nanotechnology, etc., can solve the problems of reducing the surface quality of silicon wafers, unstable oxidants, ion contamination, etc., and achieve high polishing removal rate. , No pits and bumps, less scratches

Inactive Publication Date: 2016-07-06
TSINGHUA UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These oxidizing agents are very unstable in the polishing liquid and decompose quickly during the polishing process. These have an adverse effect on the oxidation effect in the later stage of polishing and the recycling of the polishing liquid. The main factor for the wide application of the device
In addition, in the planarization process of silicon wafers, common such as KMnO 4 , Fe(NO 3 ) 3 、K 3 [Fe(CN) 6 ] and other oxidizing agents will introduce metal cations into the polishing solution, causing ion contamination and greatly reducing the surface quality of silicon wafers

Method used

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  • Preparation method and application of nano-semiconductor photocatalyst
  • Preparation method and application of nano-semiconductor photocatalyst
  • Preparation method and application of nano-semiconductor photocatalyst

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Under the protection of argon, put 6mmol elemental sulfur and 6ml oleylamine in a three-necked flask and stir at 120°C for 8h to form a dark red liquid. After cooling down to room temperature, pour it into a conical flask and store it in an oven at 50°C. The resulting dark red liquid is the sulfur precursor.

[0038] Weigh 1mmol of cuprous chloride, 0.5mmol of manganese chloride and 0.5mmol of tin tetroxide and add them to a three-necked bottle containing 50ml of oleylamine, stir and heat up to 120°C to vacuumize the three-necked bottle, and then add Introduce nitrogen, heat to 240°C (during this process, the metal salt slowly dissolves, and oleylamine changes from colorless to light yellow), inject the above-mentioned sulfur precursor quickly with an injection needle, and a black precipitate is generated immediately. After reacting for 1 h, the heating mantle was removed and cooled to room temperature. The resulting black precipitate was nano-Cu 2 MnSnS 4 nano-semico...

Embodiment 2

[0040]Under the protection of argon, put 4mmol elemental sulfur and 4ml oleylamine in a three-necked flask and stir at 120°C for 8h to form a dark red liquid. After cooling down to room temperature, pour it into a conical flask and store it in an oven at 50°C. The resulting dark red liquid is the sulfur precursor.

[0041] Weigh 2mmol of copper stearate, 1mmol of manganese stearate and 1mmol of tin stearate respectively and add them to a three-necked bottle containing 100ml of oleic acid. Stir and heat up to 120°C to evacuate the three-necked bottle, and then fill the three-necked bottle with Introduce nitrogen, heat to 270°C, quickly inject the above-mentioned sulfur precursor with an injection needle, and immediately produce a black precipitate. After reacting at this temperature for 1 hour, remove the heating mantle and cool to room temperature. The obtained black precipitate is nano-Cu 2 MnSnS 4 nano-semiconductor photocatalysts.

Embodiment 3

[0043] Under the protection of argon, put 2mmol thiourea and 4.0ml oleylamine in a conical flask, stir it on a heating plate at 180°C for 12h to form a light yellow liquid, after cooling down to room temperature, pour it into the conical flask and place it at 50°C Stored in an oven, the resulting light yellow liquid is the precursor of thiourea.

[0044] Weigh 0.5mmol copper chloride, 0.25mmol ferric chloride and 0.25mmol tin tetrachloride respectively and add them to a three-necked bottle containing 15ml of oleylamine, stir and heat up to 120°C to vacuumize the three-necked bottle, and then to three-necked Nitrogen was introduced into the neck bottle, heated to 250°C, and the above-mentioned thiourea precursor was quickly injected with an injection needle, and the reactant immediately changed from khaki to black precipitate. After reacting at this temperature for 1 hour, the heating mantle was removed and cooled to room temperature to obtain The black precipitate is nano Cu ...

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Abstract

A preparation method and an application of a nano-semiconductor photocatalyst. The invention relates to the nano-semiconductor photocatalyst used for surface planarization, and the preparation method and the application thereof. In the method, with toxic-free and low-cost precursor raw materials, nano-semiconductor particles, which have uniform particle size and good stability, are synthesized through a simple thermal injection method. The nano-semiconductor photocatalyst has wide application in the surface planarization.

Description

technical field [0001] The invention relates to a nanometer semiconductor photocatalyst. Specifically, the present invention relates to the preparation and application of a nano-semiconductor photocatalyst for surface planarization. Background technique [0002] In the manufacture of electronic products, chemical mechanical polishing (CMP) is recognized as the most effective method for surface planarization and obtaining a smooth and damage-free surface. CMP combines the advantages of chemical grinding and mechanical grinding, and gradually removes the softened layer formed by the reaction between the polishing liquid and the polished workpiece through mechanical action, so as to obtain a more perfect surface while ensuring the material removal efficiency. In practice, superhard substrate materials such as SiC and GaN used for GaN epitaxial growth are very difficult to process in the process of surface planarization due to their high hardness, high brittleness, stable chemi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/04B01J27/043B82Y30/00B82Y40/00C09G1/02
Inventor 潘国顺梁晓璐周艳顾忠华罗桂海
Owner TSINGHUA UNIV
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