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Aqueous chemical mechanical polishing composition and use thereof

A water-based composition, chemical mechanical technology, applied in the direction of polishing composition containing abrasives, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems that need to be improved, reduce the generation of volatilization and irritating odor, improve Polishing environment, strong applicability effect

Active Publication Date: 2014-10-22
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the current research on the composition of the chemical mechanical polishing process for the silver layer of the integrated circuit silver interconnection and its corresponding process still needs to be improved

Method used

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  • Aqueous chemical mechanical polishing composition and use thereof
  • Aqueous chemical mechanical polishing composition and use thereof
  • Aqueous chemical mechanical polishing composition and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Influence of oxidizing agent type on polishing effect in the initial polishing process of embodiment 1

[0044] With reference to the aforementioned general method, according to the conditions described in the following experimental groups and control groups, carry out the initial polishing experiment of the silver layer of integrated circuit silver interconnection respectively, and then compare the polishing effects of each group:

[0045] 1. Grouping and processing methods

[0046] Experimental group 1:

[0047] Add 5 grams of ethanolamine, 5 grams of ammonia water, 10 grams of glycerol and 10 grams of lactic acid into 700 grams of deionized water in sequence, stir to dissolve, and after uniformity, slowly stir and add 200 grams of 30% 15nm silica hydrosol.

[0048] Before polishing, add 16.7 grams of 30% oxidant hydrogen peroxide solution to the above mixture, and use KOH to calibrate the pH value to 10.5, and finally add water to make up 1000 grams and stir evenl...

Embodiment 2

[0064]Influence of complexing agent kind on initial / finish polishing effect in the polishing composition of embodiment 2

[0065] With reference to the aforementioned general method, according to the conditions described in the following experimental group and control group, carry out the initial / final polishing experiment of the silver layer of integrated circuit silver interconnection respectively, then compare the polishing effect of each group, wherein, first adopt the initial polishing liquid to The silver layer of integrated circuit silver interconnection is polished at a high rate. After removing most of the silver layer until the photoresist is slightly exposed, the final polishing solution is used for final polishing at a low rate until it reaches the figure 1 The effect shown. specifically:

[0066] 1. Grouping and processing methods

[0067] Experimental group 1:

[0068] Initial liquid preparation: add 5 grams of ethanolamine, 5 grams of ammonia water, 10 gram...

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Abstract

The invention discloses a chemical-mechanical polishing aqueous composition and a chemical-mechanical polishing process method of an integrated circuit silver interconnecting sliver layer, wherein the chemical-mechanical polishing aqueous composition comprises the following components in percentage by weight: 1%-20%, preferably 4%-8% of abrasive materials, 0.1%-10%, preferably 0.5%-5% of complexing agent, and 0.1%-10%, preferably 1%-3% of lubricating agent, wherein the pH value of the chemical-mechanical polishing aqueous composition is 8.0-11.0, preferably 9.5-10.5. The chemical-mechanical polishing aqueous composition can be effectively applied to the chemical-mechanical polishing process of the integrated circuit silver interconnecting sliver layer and can be used for effectively realizing high-flatness high-speed initial polishing and optimizing the low-speed final polishing of surface crudeness, so that a nanometer-level polishing sliver layer surface with extremely low surface defects can be obtained.

Description

technical field [0001] The invention relates to a chemical mechanical polishing water-based composition and application thereof, in particular to a chemical mechanical polishing water-based composition and a chemical mechanical polishing process for silver interconnected silver layers of integrated circuits. Background technique [0002] In recent years, in order to achieve high functionality and high integration of semiconductor devices, the wiring is miniaturized, the structure is complicated, the chip size is enlarged, and the surface with high flatness, low surface roughness and extremely low microscopic defects has become the next generation of ULSI product manufacturing. This also puts forward a demand for silver interconnection surface chemical mechanical planarization technology and its polishing composition that can replace or partially replace copper interconnection, especially the research on polishing composition and related processes with controllable polishing e...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L21/768
Inventor 戴媛静雒建斌路新春潘国顺
Owner TSINGHUA UNIV
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