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a polishing composition

A polishing composition and composition technology, applied in the field of polishing compositions for sapphire, can solve the problems of low production efficiency, difficult processing, high processing cost, etc., and achieve the effects of improving surface quality, high polishing removal rate, and increasing removal rate

Active Publication Date: 2019-01-11
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The hardness of sapphire single crystal is Mohs 9, second only to diamond (Mohs 10), and its chemical properties are very stable, so it is difficult to process, with low production efficiency and high processing costs

Method used

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Embodiment Construction

[0017] The following examples can enable those skilled in the art to understand the present invention more comprehensively, but do not limit the present invention in any way.

[0018] A polishing composition for sapphire, comprising mixed abrasives, inorganic metal salts, surfactants, pH regulators and water.

[0019] Table 1 shows the polishing compositions of Examples 1-6 and Comparative Examples 1-2 and their cyclic removal rates and surface quality and surface roughness Ra after polishing sapphire wafers.

[0020] Polishing machine: UNIPOL-1000S single-sided polishing machine;

[0021] Polished sapphire wafer: 2 inches;

[0022] Polishing pad: SUBA800;

[0023] Polishing pressure: 300 g / cm2;

[0024] Upper plate speed: 60 rpm;

[0025] Bottom plate speed: 140 rpm;

[0026] Polishing fluid flow: 70ml / min

[0027] Polishing liquid circulation polishing time: 2 hours

[0028] Circular polishing: refers to that during the polishing process, the export port of the polish...

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Abstract

The invention belongs to the technical field of chemically mechanical polishing of ultra-hard materials for electronic manufacture and relates to a polishing composition. The polishing composition comprises a mixed grinding material, inorganic metal salt, a surfactant, a pH value adjusting agent and water, and the mixed grinding material is composed of silicon oxide being 0.1-10nm in particle size and other grinding materials. A pH value of the composition is 9.0-12.0 and suitable for polishing of sapphires. The polishing composition is capable of not only evidently increasing sapphire polishing removal rate but also improving surface quality of sapphire wafers, and the polished sapphire wafers are smooth in surface and free of surface defects such as scratches and pits.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing of superhard materials in electronic manufacturing, and in particular relates to a polishing composition for sapphire. Background technique [0002] Sapphire single crystal (α-Al 2 o 3 ), has the characteristics of high hardness, good light transmission, excellent electrical insulation and stable chemical properties, so it is widely used in light-emitting diode (LED) semiconductor epitaxial substrates, precision instrumentation windows and other fields. Currently, sapphire is the most widely used LED substrate material. [0003] The basic process of sapphire processing is crystal growth, slicing, grinding, polishing and cleaning. Sapphire polishing technology is one of the bottlenecks restricting the development of semiconductor lighting technology. [0004] The hardness of sapphire single crystal is 9 on the Mohs scale, second only to diamond (10 on the Mohs scale), and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 潘国顺周艳龚桦邹春莉
Owner TSINGHUA UNIV
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