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Preparation and use of cerium oxide / silicon oxide compound abrasive

A composite abrasive and silicon oxide technology, which is applied in the field of ultra-precision polishing, can solve the problems of complex chemical composition of polishing slurry, inability to meet ultra-precision polishing, and insufficient coating uniformity, so as to improve the quality of the polished surface, reduce the number of polishing passes, Experimental repeatability is good

Active Publication Date: 2012-08-29
溧阳常大技术转移中心有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cerium oxide / silicon oxide powder prepared by using ammonia water or sodium hydroxide as a precipitant, the coating of cerium oxide particles on the surface of silicon oxide is not uniform enough, and cannot meet the requirements of ultra-precision polishing
[0005] At present, SiO is commonly used in GaAs wafer CMP 2 Abrasive, but the main problem is SiO 2 The polishing rate of the abrasive is too low. In practical applications, it is often necessary to add an oxidizing agent to the polishing slurry to improve the polishing rate, thus complicating the chemical composition of the polishing slurry; or by increasing the number of polishing passes and increasing the polishing time, so make the polishing efficiency low
Chen Yang and Chen Zhigang used ultrafine CeO 2 Abrasive polishing of gallium arsenide wafers, obtained a polished surface with a roughness Ra value of 0.740nm (Chen Yang, Li Xiazhang, Chen Zhigang, et al. Research on the polishing of GaAs wafers with nano-abrasives[J]. Solid State Electronics Research and Progress, 2006 No. 4), and applied for a patent on this technology (application number: 200510041507.2), but this technology is a two-step polishing process, the total polishing time is 60 minutes, and the polishing efficiency is low

Method used

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  • Preparation and use of cerium oxide / silicon oxide compound abrasive
  • Preparation and use of cerium oxide / silicon oxide compound abrasive
  • Preparation and use of cerium oxide / silicon oxide compound abrasive

Examples

Experimental program
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Effect test

Embodiment 1

[0020]Example 1: Weigh 1 g of silica microspheres and disperse them into 50 ml of deionized water, then add 0.1 g of sodium dodecylbenzenesulfonate as a dispersant, and strengthen the dispersion by ultrasonic and mechanical stirring. Then weigh 1.263g of cerium nitrate and dissolve it in 50ml of deionized water, then add 3g of hexamethylenetetramine, and stir evenly with an electric stirrer. The two reaction solutions were mixed and stirred uniformly, wherein the mass concentration of the silicon oxide suspension was 1 wt %, the concentration of cerium ions was 0.02 mol / l, and the molar concentration ratio of hexamethylenetetramine to cerium nitrate was 10:1. Place the prepared reaction solution in a water bath at 80°C for 2 hours under the condition of electromagnetic stirring, centrifuge and wash the precipitate (three times with distilled water and once with absolute ethanol), and then place it in a blast drying oven at 70°C Drying in medium temperature, grinding, and calci...

Embodiment 2

[0024] Embodiment 2: The steps of this embodiment are basically the same as those of the above-mentioned embodiment 1, except that the mass concentration of the silicon oxide suspension is 0.5 wt%, the concentration of cerium ions in the solution is 0.01 mol / l, and the hexamethylene tetra The molar concentration ratio of amine to cerium nitrate is 5:1. The prepared reaction solution was placed in a water bath at 70° C. for 1 h, and then the precursor obtained by centrifugation was calcined at 300° C. for 0.5 h.

[0025] The cerium oxide / silicon oxide composite abrasive prepared by the processing parameters of Example 2 is formulated into a polishing slurry with a mass concentration of 0.5wt%, and the mass concentration of the oxidizing agent (hydrogen peroxide) is 15%, and the pH of the polishing slurry is adjusted with ammonia The value is adjusted to 10, and the gallium arsenide wafer (100) is polished using a high-precision polishing machine, and the specific polishing proc...

Embodiment 3

[0026] Embodiment 3: The steps of this embodiment are basically the same as those of the above-mentioned embodiment 1, except that the mass concentration of the silicon oxide suspension is 5 wt %, the concentration of cerium ions in the solution is 0.5 mol / l, and hexamethylenetetramine The molar concentration ratio with cerium nitrate is 20:1. The prepared reaction solution was placed in a water bath at 90° C. for 5 h, and then the precursor obtained by centrifugation was calcined at 600° C. for 4 h.

[0027] The cerium oxide / silicon oxide composite abrasive prepared by the processing parameters of Example 3 is formulated into a polishing slurry whose mass concentration is 5wt%, the mass concentration of oxidizing agent (hydrogen peroxide) is 5%, and the pH value of the polishing slurry is adjusted to Adjust to 8, and use a high-precision polishing machine to polish the gallium arsenide wafer (100), and the specific polishing process parameters are the same as above.

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Abstract

The invention relates to a method for preparing a ceria / monox compounded abrasive, and application of the compounded abrasive. The method uses monodisperse spherical monox as a kernel of a coating type compounded abrasive, hexamethylenetetramine (HMT) as a precipitator and cerium salt as a raw material, and adopts an even precipitation method process to synthesize the ceria / monox compounded abrasive. Through the optimization of process parameters, such as the use amount ratio of monox master particles to the cerium salt, the molar ratio of the HMT to the cerium salt, and reaction and calcination temperature, the method controls the covering amount, the shape and the distribution state of ceria particles on the surface of the monox, thereby preparing the ceria / monox compounded abrasive of which the nanometer-level ceria particles evenly cover on the surface of the monox and which has good monodispersity; the method does not need complex equipment; and the needed chemical materials haveless varieties, cheap prices and good experiment repeatability. The ceria / monox compounded abrasive is prepared into polishing slurry for chemical mechanical polishing of a gallium arsenide chip so as to obtain the polishing surface with the roughness in sub-nanometer magnitude and further improve polishing speed, reduce polishing pass and improve efficiency.

Description

technical field [0001] The invention belongs to the field of preparation of ultrafine composite powder, a preparation method of special monodisperse spherical cerium oxide / silicon oxide coated composite abrasive and its application in ultra-precision polishing. Background technique [0002] With the reduction of the feature size of VLSI devices and the improvement of integration, it is required that the surface roughness of the substrate material must reach the nanometer level, which puts forward higher requirements for the polishing quality of the substrate material. Chemical-mechanical polishing (CMP) is an important processing method to obtain an ultra-smooth surface, and it is almost the only technology that can achieve comprehensive planarization. Gallium arsenide (GaAs) is an important III-V compound semiconductor material, and GaAs material has low hardness (Mohs hardness is 4.5), high brittleness, and easy cleaving, which makes the processing of GaAs wafers become Ga...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14
Inventor 陈杨陈志刚隆仁伟赵晓兵
Owner 溧阳常大技术转移中心有限公司
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