Polishing composition, and preparation and polishing methods thereof

Abstract

The invention relates to a polishing composition, and preparation and polishing methods thereof, belongs to the technical field of microelectronic manufacturing and especially relates to the technical field of ultra-precision machining of ultra-hard materials. The polishing composition comprises polishing particles, an oxidizing agent, a photo-catalyst, a corrosive agent, a polishing stabilizer and water according to the ratio of 10-30 wt% of the polishing particles, 0.5-15 wt% of the oxidizing agent, 0.01-10 wt% of the corrosive agent, 0.001-5 wt% of the photo-catalyst, 0.1-10 wt% of the polishing stabilizer and the balanced being water. The polishing composition containing the photo-catalyst is used for polishing a silicon carbide wafer under irradiation of ultraviolet light. The polishing composition significantly increases removal rate and has good cyclic polishing stability. The polished silicon carbide wafer has a super-smooth surface, has no surface defects such as scratches, pits and the like, is low in surface roughness, and can present clear and regular atom step morphology.

Description

technical field [0001] The invention belongs to the technical field of microelectronics manufacturing, in particular to the technical field of ultra-precision processing of superhard materials. Background technique [0002] Due to its superior physical and chemical properties such as high thermal conductivity, high breakdown field strength, large band gap, high electron saturation drift rate, high temperature resistance, strong radiation resistance and good chemical stability, silicon carbide single crystal has become a successor to silicon, The third generation of key semiconductor materials after gallium arsenide. At the same time, due to the very small lattice mismatch rate and thermal expansion coefficient difference between silicon carbide and gallium nitride, an important epitaxial material for making high-power electronic devices and LED optoelectronic devices, silicon carbide has become an important substrate for wide bandgap semiconductor devices. Bottom material. ...

AI Technical Summary

Problems solved by technology

In "ECS Journal of Solid State Science and Technology" (N3028-N3035, Issue 2, 2013), Y.Sano et al. proposed to use a non-abrasive polishing solution containing hydrogen fluoride super corrosive acid combined with a platinum disc to polish the Si surface of SiC wafers. , to obtain sub-nanometer surface, but the removal rate is lower than 100nm / hour

It can be seen that in the existing polishing methods, the removal rate is not high, and the surface smoothness is not enough, or the polishing composition is not environmentally friendly, the polishing method is complicated, and the conditions are harsh.

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