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Sapphire polishing solution with high surface evenness, and polishing technology thereof

A flatness and sapphire technology, applied in the field of sapphire polishing, can solve the problems of inability to achieve sapphire polishing removal rate and high surface flatness, affect the large-scale industrial application of sapphire crystal slices, and low processing efficiency, so as to achieve easy control of the polishing process, High removal rate, rapid production, and high production yield

Inactive Publication Date: 2018-09-04
江苏金琥珀光学科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, only chemical mechanical polishing technology can obtain lower surface roughness and higher material removal rate at lower cost. However, due to the high hardness and high chemical stability of sapphire crystal, the whole process is very time-consuming and labor-intensive. , the processing efficiency is low, which seriously affects the large-scale industrial application of sapphire crystal slices
Unable to achieve sapphire polishing removal rate and high surface flatness at the same time

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] A sapphire polishing liquid with high surface smoothness, including rough polishing liquid and fine polishing liquid.

[0012] Coarse polishing liquid configuration: uniformly mix the following components, weight ratio 50% aluminum dioxide nanoparticles, 6% sodium methoxide, 0.16% sodium methylene dinaphthalene sulfonate, 0.7% sodium iminodisuccinate , and the balance of deionized water.

[0013] Fine polishing liquid configuration: uniformly mix the following components, 40% hydrophilic silica nanoparticles by weight, 0.3% non-ionic surfactant fatty alcohol polyoxyethylene ether (AEO), 0.8% sodium polyacrylate , 1.2% hydroxyethyl ethylenediamine and the balance of deionized water.

[0014] A sapphire polishing process with high surface smoothness: firstly, the sapphire is polished with a coarse polishing liquid, the polishing pressure is 0.15Mpa, the polishing disc rotation speed is 70r / min, the polishing liquid flow rate is 240mL / min, the polishing temperature is 25°...

Embodiment 2

[0016] A sapphire polishing liquid with high surface smoothness, including rough polishing liquid and fine polishing liquid.

[0017] Coarse polishing liquid configuration: uniformly mix the following components, weight ratio 40% aluminum dioxide nanoparticles, 8% sodium methoxide, 0.25% sodium methylene dinaphthalene sulfonate, 1.5% sodium iminodisuccinate , and the balance of deionized water.

[0018] Fine polishing liquid configuration: uniformly mix the following components, 50% hydrophilic silica nanoparticles by weight, 0.5% non-ionic surfactant fatty alcohol polyoxyethylene ether (AEO), 0.9% sodium polyacrylate , 1.5% hydroxyethyl ethylenediamine and the balance of deionized water.

[0019] A sapphire polishing process with high surface smoothness: firstly polish the sapphire with a coarse polishing liquid, the polishing pressure is 0.17Mpa, the polishing disc rotation speed is 90r / min, the polishing liquid flow rate is 270mL / min, the polishing temperature is 25°C, and...

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PUM

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Abstract

The invention relates to a sapphire polishing solution with the high surface evenness, and a polishing technology thereof. The sapphire polishing solution with the high surface evenness is prepared from a rough polishing solution and a finish polishing solution, wherein the rough polishing solution is prepared from the following components in percentage by weight: 20 to 50 percent of alumina nanoparticle, 3 to 10 percent of sodium methylate, 0.1 to 1 percent of disodium methylene dinaphthalenesulfonate, 0.5 to 2 percent of sodium iminodisuccinate, and the balance of solvent; the finish polishing solution is prepared from the following components in percentage by weight: 20 to 50 percent of hydrophilic silicon dioxide nanoparticle, 0.1 to 1 percent of nonionic surfactant fatty alcohol-polyoxyethylene ether, 0.5 to 2 percent of sodium polyacrylate, 0.2 to 1.5 percent of hydroxyethyl ethylenediamine, and the balance of solvent. The sapphire polishing solution with the high surface evenness provided by the invention not only can meet the requirement on a high polishing removal rate, but also can form a sapphire surface with high evenness and ultralow roughness; the polishing solution is low in cost, a polishing process is easy to control, the production yield is high, and the product quality is stable; a polishing method of combining the rough polishing and the finish polishing canbe used, so that not only can fast production with a high removal rate be realized, but also the precision polishing requirements on high evenness and low surface roughness can be met.

Description

technical field [0001] The invention relates to a sapphire polishing liquid with high surface smoothness and a polishing process thereof, belonging to the technical field of sapphire polishing. Background technique [0002] Sapphire can be a high-hardness ceramic material, which is mainly used in watch lenses, mobile phone lenses, camera lenses, etc. It has the characteristics of high hardness and is not easy to scratch. [0003] The hardness of sapphire crystal is very high, with a Mohs hardness of 9, second only to diamond. It has good light transmission, thermal conductivity and electrical insulation, good mechanical and mechanical properties, and has the characteristics of wear resistance and wind erosion resistance. The melting point of sapphire crystal is 2050°C, the boiling point is 3500°C, and the maximum working temperature can reach 1900°C. Sapphire crystals still have good stability at high temperatures, and have good transmittance in the visible and infrared ra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02B24B1/00
CPCB24B1/00C09G1/02
Inventor 贡浩飞潘华平
Owner 江苏金琥珀光学科技股份有限公司
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