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Chemical corrosion liquid in high selection ratio of gallium arsenide in aluminum arsenide / gallium arsenide

A high selectivity, chemical etching technology, applied in the field of chemical etching solution, can solve the problems of device damage, low selectivity ratio, damage to photoresist by etching solution, etc.

Inactive Publication Date: 2006-07-05
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

[0010] The first method chooses a lower
[0011] The second method has the problem that the etching solution damages the photoresist
[0012] Although the third method has a relatively large selection ratio, it is easy to cause damage to the device during the device manufacturing process.

Method used

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  • Chemical corrosion liquid in high selection ratio of gallium arsenide in aluminum arsenide / gallium arsenide
  • Chemical corrosion liquid in high selection ratio of gallium arsenide in aluminum arsenide / gallium arsenide

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Embodiment Construction

[0021] A kind of GaAs high selectivity ratio chemical corrosion solution to AlAs / GaAs of the present invention is characterized in that, comprises:

[0022] Citric acid solution and hydrogen peroxide, the volume ratio of the citric acid solution and hydrogen peroxide is 4:1.

[0023] Wherein the citric acid solution is formed by mixing the ratio of 1 gram of solid citric acid and 1 ml of water.

[0024] Wherein the concentration of hydrogen peroxide is 30%.

[0025] The using method of the present invention is:

[0026] Using citric acid solution: H 2 o 2 The method for selectively etching the GaAs layer from the AlAs layer with a solution with a volume ratio of 4:1. This method not only has a high selective etching ratio, but also is compatible with GaAs integrated circuit technology, and has the characteristics of simple technology, safety and stability, simple operation and good repeatability.

[0027] The present invention adopts citric acid solution: H 2 o 2 The vo...

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Abstract

This invention relates to a chemical corrosive with high selectivity towards gallium arsenide among gallium arsenide / aluminium arsenide mixture. It uniquely contains citric acid solution and oxydol with a volume ratio of 4:1 and is compatible with gallium arsenide integration technique. Besides, it also has the advantages of nontoxic solution and simple technique.

Description

technical field [0001] The invention belongs to a chemical corrosion solution used in the technical field of semiconductors, in particular to a chemical corrosion solution with high gallium arsenide selectivity to aluminum arsenide / gallium arsenide. Background technique [0002] The corrosion rate is limited by two limiting mechanisms: [0003] First, the corrosion rate is controlled by the rate at which the etchant reaches the reacting surface, or the rate at which the reaction products leave the reacting surface. This situation is called a diffusion-limited corrosion mechanism, or a mass-transport-limited corrosion mechanism. [0004] The second case is that the corrosion rate is limited by the rate of chemical reactions occurring on the surface, which is defined as reaction rate-limited corrosion, or surface-limited corrosion, which is usually a function of temperature and the composition and concentration of the corrosive solution. [0005] Gallium arsenide (GaAs) is t...

Claims

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Application Information

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IPC IPC(8): C23F1/16
Inventor 黄应龙杨富华王良臣姜磊白云霞王莉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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