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Etching solution composition

A technology of composition and etching solution, applied in the direction of instruments, electrical components, circuits, etc., can solve the problems of low heat resistance of photoresist, melting and deformation of photoresist, and achieve improved stability and uniformity. Sex, the effect of suppressing unevenness

Inactive Publication Date: 2011-01-19
IDEMITSU KOSAN CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the lift-off method, since the heat resistance of the photoresist is low, when a high-temperature treatment process is required, the photoresist may melt and deform.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0109] 48.3 g of ammonia water (29% by weight), 9.7 g of hydrogen peroxide water (31% by weight), and 142 g of water were added to a 200 ml beaker to prepare an etching solution consisting of 200 g of an aqueous solution of 7% by weight of ammonia and 1.5% by weight of hydrogen peroxide. combination.

[0110] (Evaluation experiment 1)

[0111] In the prepared alkaline etchant composition, submerged into the patterned positive resist / Al / Mo / IZO The etching rate of the Al / Mo laminated film was obtained by visually measuring the appropriate etching time of the Al / Mo laminated film on a substrate made of glass. The results are shown in Table 1.

Embodiment 2～15

[0113] An etching solution composition was prepared in the same manner as in Example 1 except that the concentrations of ammonia and hydrogen peroxide were the concentrations shown in Table 1. Evaluation experiment 1 was performed on the prepared etching solution composition in the same manner as in Example 1, and the etching rate of the Al / Mo laminated film was calculated. The results are shown in Table 1.

[0114] Table 1

[0115]

Embodiment 16

[0125] The etching liquid composition shown in Table 4 was prepared similarly to Example 1 except having added ammonia and water so that ammonia might become 7 weight%.

[0126] Table 4

[0127] etchant

Ammonia (wt%)

Hydrogen peroxide (weight%)

Water (wt%)

Liquid temperature (℃)

Example 16

7

0

93

40

[0128] (Evaluation experiment 3)

[0129] The etching rate of Al, Cu, IZO, p-ITO or α-ITO film with the etching solution composition of Example 16 shown in Example 1 and Table 4 was measured. The results are shown in Table 5. In addition, the etching selectivity is shown in Table 6.

[0130] table 5

[0131]

[0132] Table 6

[0133] etchant

Al and IZO

selection ratio

Al and p-ITO

selection ratio

Al and α-ITO

selection ratio

Cu and IZO

selection ratio

Cu and p-ITO

selection ratio

Cu and α-ITO

selection ratio

Example 1

33.3∶1

10.3∶1...

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Abstract

Provided is an etching solution composition for selectively etching a metal film, which is composed of Al, Al alloy or the like and is arranged on an amorphous oxide film, from a laminated film including the metal film and an amorphous oxide film of various types. The etching solution composition is used for selectively etching the metal film from the laminated film which includes the amorphous oxide film and the metal film composed of Al, Al alloy, Cu, Cu alloy, Ag or Ag alloy, and is composed of an aqueous solution containing an alkali.

Description

technical field [0001] The present invention relates to an etchant composition for selectively etching a metal film in a laminated film including an amorphous oxide film and a metal film made of Al, Al alloy, or the like. The present invention also relates to a laminated film etched using the etching solution composition, a liquid crystal display panel including the laminated film, a liquid crystal display device, and a method for producing the same. The present invention also relates to an etching method, a patterning method, and a thin film transistor manufacturing method for producing semiconductor elements, integrated circuits, electrodes and other fine electronic components using the etching solution composition. Background technique [0002] In the manufacture of thin film transistor display panels, FFS (Fringe Field Switching) or IPS (In-Plane Switching) methods are used as a method of widening the viewing angle of the display panel and improving the response speed of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/36C23F1/34C23F1/38C23F1/40H01L21/308
CPCH01L21/32134C23F1/44H01L29/7869H01L29/4908C23F1/32G02F2001/134372H01L29/66742H01L29/45C23F1/02G02F1/13439G02F1/134372H01L29/66969
Inventor 松原雅人井上一吉矢野公规五十岚勇树
Owner IDEMITSU KOSAN CO LTD
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