Semiconductor device and manufacturing method thereof, integrated circuit and electronic device

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof, an integrated circuit and an electronic device, and relates to the technical field of semiconductors. The invention aims to provide a semiconductor device which is simple in technology, low in manufacturing difficulty, low in production cost and capable of preventing transverse corrosion to a source-drain layer whennanowires are released. The semiconductor device includes: a gate-all-around transistor; wherein the gate-all-around transistor comprises a channel layer and a source-drain structure connected with the channel layer; a source-drain structure, the source-drain structure comprising a source-drain layer and a liner layer, and the liner layer being formed between the source-drain layer and the channel layer; the material of the liner layer being the same as that of the channel layer; or the absolute value of the difference between the mass percent of the target element contained in the material of the liner layer and the mass percent of the target element contained in the channel layer is smaller than the first threshold value.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, an integrated circuit and electronic equipment. Background technique [0002] Stacked nanowire or sheet-ring-gate device is a new kind of semiconductor transistor, which has good gate control ability, can increase operating current and reduce short channel effect, so it has broad application prospects. [0003] The release of stacked nanowires / sheets is one of the key technologies to realize the integration of gate-all-around devices. At present, the inner wall technology is generally used to prevent the lateral corrosion of the source and drain layers when the nanowires are released. However, the internal wall technology has complex procedures and high manufacturing difficulty, which will also increase the production cost of the gate-all-around device. Contents of the invention [0004] The purpose of the present ...

AI Technical Summary

Problems solved by technology

However, the internal wall technology has complicated procedures and high manufacturing difficulty, which will also increase the production cost of gate-all-around devices.

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