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Corrosive agent and corrosion method of HfSiON high-K gate dielectric material

A gate dielectric and etchant technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor volatility of etching products, decreased device driving ability, and field oxide layer consumption, etc., to improve the corrosion rate and the selection ratio. , to achieve the effect of selective removal

Active Publication Date: 2010-01-06
SOI MICRO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When dry etching Hf-based high-K materials, although anisotropic etching profiles can be obtained, the dry etching of high-K dielectrics has a negative impact on SiO 2 Or the selection of Si is relatively low, which will cause the consumption of Si in the source and drain regions of the device during the integration process, which will increase the resistance of the device and reduce the driving capability of the device; Therefore, after dry etching, there will be a large amount of etching residues on the sidewall of the etched section and the surface of the device, and it is generally necessary to use a wet method to remove the etching residues
However, when wet etching Hf-based high-K materials, although a high selective ratio etching of Si substrates can be achieved, it takes a long time to completely remove the high-K dielectrics after high-temperature annealing, which will cause field oxidation. A large consumption of layers, which is not conducive to integration
In addition, isotropic wet corrosion is also one of the reasons for limiting its long-term corrosion

Method used

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  • Corrosive agent and corrosion method of HfSiON high-K gate dielectric material
  • Corrosive agent and corrosion method of HfSiON high-K gate dielectric material

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Embodiment 1

[0029] In this embodiment 1, the etchant of the HfSiON high-K gate dielectric material includes 0.23%-4.06% hydrofluoric acid and 95.94%-99.77% water by weight percentage. In this embodiment, the concentration of the hydrofluoric acid is 40%, and the density is 1.13g / cm 3 .

Embodiment 2

[0031] In Embodiment 2, the etchant of the HfSiON high-K gate dielectric material includes 0.19%-4.24% hydrofluoric acid, 4.32%-54.57% inorganic acid and 41.19%-95.49% water by weight percentage. The inorganic acid includes one or more of hydrochloric acid, sulfuric acid and phosphoric acid, preferably, the inorganic acid is hydrochloric acid. In this embodiment, the concentration of the hydrofluoric acid is 40%, and the density is 1.13g / cm 3 ; The concentration of the hydrochloric acid is 37.5%, and the relative density is 1.18g / cm 3 ; The concentration of the sulfuric acid is 96%, and the relative density is 1.84g / cm 3 ; The concentration of the phosphoric acid is 85%, and the relative density is 1.84g / cm 3 .

[0032]When the inorganic acid is hydrochloric acid, the corrosive agent includes 0.22%-4.24% hydrofluoric acid, 4.32%-12.44% hydrochloric acid and 83.32%-95.46% water by weight percentage. When the inorganic acid is sulfuric acid, the corrosive agent includes 0.2%...

Embodiment 3

[0034] In this embodiment 3, the etchant of the HfSiON high-K gate dielectric material includes 0.22% to 4.83% of hydrofluoric acid, 5.31% to 58.14% of inorganic acid and 37.03% to 94.47% of organic solvent by weight percentage . The inorganic acid includes one or more of hydrochloric acid, sulfuric acid and phosphoric acid, preferably, the inorganic acid is hydrochloric acid. The organic solvent includes one or both of absolute ethanol and isopropanol, preferably, the organic solvent is absolute ethanol. In this embodiment, the concentration of the hydrofluoric acid is 40%, and the density is 1.13g / cm 3 ; The concentration of the hydrochloric acid is 37.5%, and the relative density is 1.18g / cm 3 ; The concentration of the sulfuric acid is 96%, and the relative density is 1.84g / cm 3 ; The concentration of the phosphoric acid is 85%, and the relative density is 1.84g / cm 3 .

[0035] When the inorganic acid is hydrochloric acid and the organic solvent is absolute ethanol, t...

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Abstract

The invention relates to a corrosive agent of an HfSiON high-K gate dielectric material and a corrosion method by using the corrosive agent, which belong to the technical field of integrated circuit manufacture. The corrosive agent comprises 0.19-4.83 percent by weight of hydrofluoric acid. The corrosion method by using the corrosive agent comprises the following steps: forming the HfSiON high-K gate dielectric material on an Si substrate, an Si / SiO2 interface layer or Si / SiON interface layer, and soaking the HfSiON high-K gate dielectric material in the corrosive agent for wet method corrosion. The corrosive agent is used for carrying out corrosion on the HfSiON high-K gate dielectric material and can reduce the hydrolysis of the hydrofluoric acid, thereby the corrosion speed of the HfSiON high-K gate dielectric material is improved, the corrosion speed of field oxide region SiO2 can be reduced, and the selection ratio of HfSiON to the field oxide region SiO2 can be further improved.

Description

technical field [0001] The invention relates to an etchant and an etching method using the etchant, in particular to an etchant for a HfSiON high-K gate dielectric material and an etching method using the etchant, belonging to the technical field of integrated circuit manufacturing. Background technique [0002] As the feature size of semiconductor devices enters the 45nm technology node, the leakage current of the silicon dioxide or silicon nitride gate dielectric increases significantly, so it is necessary to introduce a high K (dielectric) with a thicker physical thickness under the same equivalent oxide layer thickness. Electric constant) material to reduce gate leakage and reduce power consumption of the device. Hf-based high-K materials such as HfSiON have become the focus of high-K dielectric research because of their large dielectric constant, large band gap, good thermodynamic stability on Si substrates, and good interface properties. In order to make Hf-based high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/30H01L21/28H01L21/336
Inventor 李永亮徐秋霞
Owner SOI MICRO CO LTD
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