Corrosion solution for TiW films and corrosion method thereof

A technology of corrosion solution and film layer, which is applied in the direction of coating, metal material coating process, ion implantation plating, etc., can solve the problems affecting the corrosion effect of TiW film layer, affecting the production yield and production efficiency of multilayer film products, etc. , to achieve the effect of guaranteeing corrosion effect, facilitating production operation and improving stability

Active Publication Date: 2015-09-16
XIAN INSTITUE OF SPACE RADIO TECH
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Problems in the use of traditional hydrogen peroxide (H2O2) corrosive liquid affect the corrosion effect of TiW film, and also affect the production yield and production efficiency of multilayer film products

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Corrosion solution for TiW films and corrosion method thereof
  • Corrosion solution for TiW films and corrosion method thereof
  • Corrosion solution for TiW films and corrosion method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053]Using the continuous sputtering film forming method, TaN, TiW, Ni, Au are formed in sequence to form a multi-layer film (TaN)-TiW-Ni-Au film system, and then the film-forming substrate is evenly distributed on the film-forming substrate by mask photolithography. Glue, exposure, and development, etch the Au layer and Ni layer in sequence according to the conventional process, then corrode the TiW layer, and finally corrode the TaN layer according to the conventional process, and then obtain the required circuit pattern, such as figure 1 Shown is the corrosion process diagram of the present invention for the TaN-TiW-Ni-Au multilayer film structure.

[0054] The TiW film layer is obtained by magnetron sputtering, the target material is a TiW alloy target material, wherein 10% Ti and 90% W are uniformly mixed, and the film thickness is 500 angstroms.

[0055] The volume ratio of hydrogen peroxide, ammonia water and phosphoric acid is: hydrogen peroxide: ammonia water: phosph...

Embodiment 2

[0060] Using the continuous sputtering film forming method, TaN, TiW, Ni, Au are formed in sequence to form a multi-layer film (TaN)-TiW-Ni-Au film system, and then the film-forming substrate is evenly distributed on the film-forming substrate by mask photolithography. Glue, exposure, and development, etch the Au layer and Ni layer in sequence according to the conventional process, then corrode the TiW layer, and finally corrode the TaN layer according to the conventional process, and then obtain the required circuit pattern, such as figure 1 Shown is the corrosion process diagram of the present invention for the TaN-TiW-Ni-Au multilayer film structure.

[0061] The TiW film layer is obtained by magnetron sputtering method, the target material is TiW alloy target material, wherein 10% Ti and 90% W (mass percentage content) are uniformly mixed, and the film layer thickness is 500 angstroms.

[0062] The volume ratio of hydrogen peroxide, ammonia water and phosphoric acid is: hy...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a corrosion solution for TiW films and a corrosion method thereof. In order to solve the defects in the process of corroding TiW films by using the conventional hydrogen peroxide, components and ratios of the corrosion solution are innovatively designed; a catalyst which is ammonium hydroxide and a stabilizer which is phosphoric acid are added into the hydrogen peroxide; meanwhile, by virtue of a large quantity of tests, the ratio of the catalyst to the stabilizer to hydrogen peroxide is optimally designed; the corrosion process conditions are optimized; the stability, the corrosion speed and the corrosion capability of the corrosion solution are obviously improved; the high-quality corrosion effect is guaranteed; a large quantity of tests show that by virtue of the adoption of the corrosion solution and the corrosion method, the corrosion success rate reaches 100%; the service life of the corrosion solution is prolonged by three times or more; the production operation is facilitated; the corrosion quality is guaranteed.

Description

technical field [0001] The invention relates to a TiW film corrosion solution and a corrosion method, belonging to the technical field of corrosion processing and manufacturing technology. Background technique [0002] As a material with high melting point and high temperature resistance, TiW mainly plays the role of blocking metal diffusion and improving the temperature resistance of the circuit and interlayer bonding force or adhesion in the production of microwave multilayer film circuits. sputtering and corrosion. [0003] The (TaN)-TiW-Ni-Au film system uses continuous sputtering film formation method to sequentially generate TaN, TiW, Ni, Au to form a multi-layer film, and then uses mask photolithography to uniform the glue on the film-forming substrate. , exposure, development, etch Au, Ni, TiW, TaN in sequence, and then obtain the required circuit pattern. Poor, it is difficult to meet the requirements of the production mode of small batches and multiple varieties....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/26C23C14/58
Inventor 白浩王平
Owner XIAN INSTITUE OF SPACE RADIO TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap