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Silicon nitride film etching solution

A technology for etching solution and silicon nitride film, which is applied in the direction of surface etching composition, chemical instrument and method, etc., can solve the problems of declining productivity, changing the etching speed of silicon oxide film, changing the etching speed of silicon nitride film, etc., to achieve Prevents growth and precipitation, suppresses the generation of silicon-based particles, and improves the selectivity ratio

Inactive Publication Date: 2018-01-12
OCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to increase the etch selectivity of the silicon nitride film, when the concentration of the silane compound in the etching solution is increased, not only the etching rate of the silicon oxide film but also the etching rate of the silicon nitride film is changed, resulting in The problem of declining productivity

Method used

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Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0117] Experimental Example 1: Silicon Nitride Film Etching Solution

Embodiment

[0119] In Table 1 below, the compositions of the silicon nitride film etching solutions of Examples are shown.

[0120] Table 1

[0121]

[0122] The silicon nitride film etching solutions according to Examples 1 to 8 contained 85% by weight of phosphoric acid and the remainder of water, and the first silane compound, the second silane compound, and the fluorine-containing compound described in Table 1 were contained in ppm units.

[0123] In Example 1, tetrahydroxysilane was used as the first silane compound, trimethylhydroxysilane was used as the second silane compound, and hydrofluoric acid was used as the fluorine-containing compound.

[0124] In Example 2, tetrahydroxysilane was used as the first silane compound, trimethylhydroxysilane was used as the second silane compound, and ammonium hydrogen fluoride was used as the fluorine-containing compound.

[0125] In Example 3, tetrahydroxysilane was used as the first silane compound, chlorotrimethylsilane was used as the ...

experiment example 2

[0178] Experimental Example 2: Cleaning solution after etching

[0179] Experimental result 1

[0180] Before putting the silicon substrate including the silicon nitride film into the etching solution, the planarization operation was performed by immersing 50% by weight of hydrofluoric acid in a planarization solution diluted at 200:1 for 30 seconds.

[0181] Then, the planarized silicon substrate was coated with 500ppm tetrahydroxysilane and 500ppm ammonium fluoride (NH 4 F) After etching with 80% phosphoric acid aqueous solution for 5 minutes, wash once for 10 seconds with 80° C. cleaning solution having the composition of each example and comparative example, and then perform 30 seconds with 80° C. deionized water. Second cleaning of the clock.

[0182] The cleaning solution after the first cleaning and the deionized water after the second cleaning are respectively extracted, so that the average diameters of the silicon-based particles in the cleaning solution and the d...

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Abstract

The invention relates to a silicon nitride film etching solution, comprising first silicone compound, whose silicone atom is dependently combined with over three hydrophilic functional groups, and second silicone compound, whose silicone atom is dependently combined with one or two hydrophilic functional groups.

Description

technical field [0001] The present invention relates to a silicon nitride film etching solution capable of suppressing generation of silicon-based particles when silicon nitride film etching occurs. Background technique [0002] Generally, a known wet etching method is an etching method through a silicon nitride film on a silicon wafer, using phosphoric acid as an etching solution. When only pure phosphoric acid is used for the etching of the silicon nitride film, there may be a problem that, with the miniaturization of devices, not only the silicon nitride film but also the silicon oxide film are etched, resulting in various defects and Since the pattern is abnormal, it is necessary to further reduce the etching rate of the silicon oxide film. [0003] On the other hand, in order to further increase the etching rate of the silicon nitride film, an attempt has been made to use a compound containing fluorine as an additive, but fluorine has the disadvantage of also increasin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08
Inventor 柳浩成韩承弦张郁金允澈
Owner OCI
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