Method for generating blocking metal layer

Abstract

This invention discloses a new forming method of embollishing metal layers containing providing a semiconductor basic material with a dielectric layer and holes then to form a barrier layer on the side wall of the dielectric layer and the holes and surface of the base to carry on at least one time of ALD to form a (continuous metal seed layer) CMSL on the barrier layer in which ALD steps including filling a mixed gas of hydrogen and silane then cleaning and vacuum, then to inlet metal reacting gas to form a CMSL of 20-40 A and to form a nucleation layer of 20-40 A on the CMSL finally.

Description

(1) Technical field [0001] The invention relates to a method for forming a plug metal layer, in particular to a method for forming a tungsten plug. (2) Background technology [0002] As the density of integrated circuits continues to expand, in order to keep the chip (chip) area the same or even reduce it to continuously reduce the unit cost of the circuit, the only way is to continuously reduce the circuit design specification (design rule) to meet high requirements. The future development trend of the technology industry. With the development of semiconductor technology, the dimensions of components of integrated circuits have been reduced to the deep sub-micron range. As semiconductors continue to shrink down to the deep sub-micron range, some problems arise in process scaling. [0003] The use of titanium nitride layers is well known in the art of manufacturing integrated circuits. The titanium nitride layer is most commonly used as a barrier layer or an adhesion laye...

AI Technical Summary

Problems solved by technology

It is very difficult to make a good circuit contact on a via/contact plug with open porosity, that is, between the irregular uppermost surface of the via/contact plug and the interconnect

Because the metal layer on these irregular surfaces will crack or break after a period of time, and this will cause

Images