Cerium oxide composite particles, as well as preparation method and application thereof

A technology of composite particles and cerium oxide, which is applied in the field of chemical engineering, can solve the problems of small increase in polishing rate, low reaction temperature, and poor chemical activity, and achieve uniform coating, high polishing rate, and good activity.

Inactive Publication Date: 2014-07-02
SHANGHAI XINANNA ELECTRONICS TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantages of these patents are that the reaction temperature is low, the poor crystallization of cerium oxide leads to poor chemical activity, and the polishing rate is not improved much.

Method used

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  • Cerium oxide composite particles, as well as preparation method and application thereof
  • Cerium oxide composite particles, as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Prepare 100 g of silica sol with a mass concentration of 20%. Add 1g of silane coupling agent KH550 and stir evenly. Then add 8.68g of cerous nitrate hexahydrate and 5g of ammonia water, then add 1g of hydrogen peroxide, mix well and transfer to a high-pressure closed reaction kettle. Place in an oven at 250°C for 24 hours. After the reaction, the product was taken out, centrifuged, and washed with water three times to obtain silicon oxide / cerium oxide composite particles. The resulting product was observed with a scanning electron microscope, as figure 1 shown.

Embodiment 2

[0036] Prepare 100 g of alumina dispersion with a mass concentration of 1%. Add 0.1g of polyvinylpyrrolidone and stir evenly. Then add 0.548g of cerium ammonium nitrate and 0.48g of urea, mix well and transfer to a high-pressure closed reaction kettle. Place in a 500°C oven for 12 hours. After the reaction, the product was taken out, centrifuged, and washed with water three times to obtain aluminum oxide / cerium oxide composite particles. The resulting product was observed with a transmission electron microscope, as figure 2 shown.

Embodiment 3

[0038] Prepare 100 g of a titanium oxide dispersion with a mass concentration of 5%, and the particle size of the solute is 600 nm. Add 0.5g polyacrylamide and stir evenly. Then add 4.34g of cerous nitrate hexahydrate and 4g of hexamethane, and then add 0.5g of hydrogen peroxide, mix well and transfer to a high-pressure closed reaction kettle. Place in an oven at 800°C for 5 hours. After the reaction, the product was taken out, centrifuged, and washed with water three times to obtain titanium oxide / cerium oxide composite particles.

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Abstract

The invention relates to the field of chemical engineering, and specifically relates to cerium oxide composite particles, as well as a preparation method and application thereof. The preparation method of the cerium oxide composite particles, provided by the invention, comprises the steps of mixing an inorganic particle dispersion solution with an organic linking agent, then adding cerium salt and a precipitating agent, and uniformly stirring to obtain a mixed dispersion solution; transferring the dispersion solution prepared in the previous step into a closed high-pressure reaction kettle, and heating for reaction to obtain a reaction product; centrifuging the reaction product, taking a precipitate, and washing with water for a plurality of times to obtain the cerium oxide composite particles. According to the preparation method provided by the invention, inner cores of inorganic particles and cerium oxide nano-particles are combined through the organic linking agent to form the composite particles, and good crystallinity of cerium oxide is promoted by high-temperature water heat.

Description

technical field [0001] The invention relates to the field of chemical engineering, in particular to a cerium oxide composite particle and a preparation method and application thereof. Background technique [0002] The semiconductor industry is developing rapidly along Moore's Law that the number of transistors doubles every 18 months. As the size of the device becomes smaller and smaller, the wiring becomes denser, and the depth of focus of the optical lithography equipment decreases, it is required that the flatness of the acceptable resolution of the surface of the film reaches the nanometer level. Traditional planarization techniques such as selective deposition based on deposition technology, sputtered glass SOG, low pressure CVD, plasma enhanced CVD, bias sputtering and etch back after sputtering belonging to the structure, thermal reflow, deposition-etch- Deposition, etc., these technologies have been applied in IC technology. However, although they can also provide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01F17/00C09K3/14
Inventor 俞磊王良咏刘卫丽宋志棠
Owner SHANGHAI XINANNA ELECTRONICS TECH
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