Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Preparing method for cobalt-phosphide-modified molybdenum-doped bismuth vanadate photoelectrode

A photoelectrode, bismuth vanadate technology, applied in electrodes, electrolysis process, electrolysis components and other directions, can solve the problems of poor electron transport, slow oxygen evolution kinetic process, high surface defects, increase density, promote precipitation reaction, Delay the effect of self-recombination

Active Publication Date: 2019-03-01
CHANGZHOU UNIV
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The theoretical photolysis efficiency of bismuth vanadate is 9.2%, which is equivalent to a photocurrent density of 7.5mA cm -2 , but the actual photolysis efficiency of bismuth vanadate is much lower than its theoretical efficiency, and the current density of intrinsic bismuth vanadate photoelectrode is only 0.42mAcm -2 , as long as it is caused by the following three aspects: ① poor electron transport and high surface defects cause up to 60-80% charge recombination; ② slow oxygen evolution kinetics; ③ conduction band edge is slightly lower than the reversible hydrogen potential

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparing method for cobalt-phosphide-modified molybdenum-doped bismuth vanadate photoelectrode
  • Preparing method for cobalt-phosphide-modified molybdenum-doped bismuth vanadate photoelectrode
  • Preparing method for cobalt-phosphide-modified molybdenum-doped bismuth vanadate photoelectrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In order to make the technical objectives, technical solutions and beneficial effects of the present invention clearer, the technical solutions of the present invention will be further described below in conjunction with specific examples, but the examples are intended to explain the present invention, and cannot be construed as limitations of the present invention , Those who do not indicate specific techniques or conditions in the examples shall be carried out according to the techniques or conditions described in the documents in this field or according to the product instructions.

[0024] A method for preparing cobalt phosphide-modified molybdenum-doped bismuth vanadate photoelectrode, comprising the following steps:

[0025] (1) Use FTO conductive glass as the working electrode, platinum sheet as the counter electrode, Ag / AgCl electrode (saturated KCl solution) as the reference electrode to form a three-electrode system, and use acidic solution containing bismuth n...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparing method for a cobalt-phosphide-modified molybdenum-doped bismuth vanadate photoelectrode. The preparing method includes the steps that a bismuth oxyiodide photoelectrode is made on the surface of conducting glass with the sedimentation method, a vanadium source solution and a molybdenum source solution are dropwise added onto the bismuth oxyiodide photoelectrode,annealing cleaning is carried out, and then molybdenum-doped bismuth vanadate photoelectrode is obtained; cobalt phosphide is subjected to electrodeposition on the surface of the molybdenum-doped bismuth vanadate photoelectrode through photo assisting in a three-electrode system, and the novel bismuth vanadate photoelectrode is obtained. The invention also discloses application of the composite molybdenum bismuth vanadate photoelectrode to photoelectrocatalysis decomposition of water. The photoelectrode prepared with the method is used for producing hydrogen through photoelectrocatalysis decomposition of water, and through molybdenum doping, the concentration of charge carriers can be effectively increased, and photocurrent is increased; through cobalt-phosphide electrodeposition, composite loss in the photoelectrode can be effectively delayed, the service life of photon-generated carriers is prolonged, an oxygen evolution reaction on the surface of the photoelectrode is promoted, andtherefore the solar energy photo-hydrogen conversion efficiency of the semiconductor photoelectrode is improved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials, and in particular relates to a preparation method of a cobalt phosphide-modified molybdenum-doped bismuth vanadate photoelectrode and its application in photoelectric catalytic water decomposition. Background technique [0002] In order to realize the strategy of sustainable development, the development and utilization of renewable energy industry has become an important strategic goal of all countries in the world. Among them, solar energy, as a clean renewable energy source, has tens of thousands of times the reserves of other renewable energy sources; at the same time, solar energy hardly releases greenhouse gases during use, which helps to alleviate environmental pollution caused by extensive use of petroleum and fuel combustion. Environmental issues such as the greenhouse effect promoted by the solar energy have occupied an important position in the renewable energy industry....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25B1/04C25B11/06C03C17/36
CPCC03C17/36C03C17/3618C03C17/3639C03C17/3649C03C2218/115C25B1/04C25B1/55C25B11/051C25B11/055C25B11/091Y02E60/36Y02P20/133
Inventor 刘长海罗恒陈智栋
Owner CHANGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products