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Phosphorus-doped graphene quantum dot-graphite phase carbon nitride p-n junction photocatalyst as well as preparation method and application thereof

A technology of graphene quantum dots and graphitic carbon nitride, which is applied in the field of photocatalysis and achieves the effects of simple preparation method, uniform particle size and structure, and high catalytic activity

Active Publication Date: 2017-12-26
HUAWEI TEHCHNOLOGIES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the current prior art, graphene quantum dots compounded with graphite phase carbon nitride are all n-type semiconductors

Method used

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  • Phosphorus-doped graphene quantum dot-graphite phase carbon nitride p-n junction photocatalyst as well as preparation method and application thereof
  • Phosphorus-doped graphene quantum dot-graphite phase carbon nitride p-n junction photocatalyst as well as preparation method and application thereof
  • Phosphorus-doped graphene quantum dot-graphite phase carbon nitride p-n junction photocatalyst as well as preparation method and application thereof

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Experimental program
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Embodiment 1

[0036](1) Preparation of phosphorus-doped graphene quantum dots:

[0037] 1,3,6-Trinitropyrene and Na 2 HPO 4 12H 2 O is dissolved in water to obtain a mixed aqueous solution, adding sodium hydroxide, and performing a one-step hydrothermal reaction under alkaline conditions, wherein the concentration of 1,3,6-trinitropyrene is 2 mg / mL, Na 2 HPO 4 12H 2 The concentration of O is 70 mg / mL, the concentration of sodium hydroxide is 0.3 mol / L, the temperature of hydrothermal reaction is 200 ℃, and the time of hydrothermal reaction is 6 hours. Phosphorus-doped graphite is obtained after removing unreacted small molecules by dialysis ene quantum dots.

[0038] (2) Preparation of phosphorus-doped graphene quantum dots-graphite phase carbon nitride p-n junction photocatalyst:

[0039] The graphite phase carbon nitride powder is ultrasonically dispersed in a phosphorus-doped graphene quantum dot aqueous solution with a concentration of 11mg / mL, and the concentration of the graphit...

Embodiment 2

[0055] (1) Preparation of phosphorus-doped graphene quantum dots:

[0056] 1,3,6-Trinitropyrene and Na 2 HPO 4 12H 2 O is dissolved in water to obtain a mixed aqueous solution, adding sodium hydroxide, and performing a one-step hydrothermal reaction under alkaline conditions, wherein the concentration of 1,3,6-trinitropyrene is 5 mg / mL, Na 2 HPO 4 12H 2 The concentration of O is 50 mg / mL, the concentration of sodium hydroxide is 0.2 mol / L, the temperature of hydrothermal reaction is 180 °C, and the time of hydrothermal reaction is 10 hours. Phosphorus-doped graphite is obtained after removing unreacted small molecules by dialysis ene quantum dots.

[0057] (2) Preparation of phosphorus-doped graphene quantum dots-graphite phase carbon nitride p-n junction photocatalyst:

[0058] The graphite phase carbon nitride powder is ultrasonically dispersed in a phosphorus-doped graphene quantum dot aqueous solution with a concentration of 15mg / mL, and the concentration of the grap...

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Abstract

The invention discloses a phosphorus-doped graphene quantum dot-graphite phase carbon nitride p-n junction photocatalyst as well as a preparation method and application thereof. The preparation method comprises the steps of dissolving 1,3,6-trinitropyrene and Na2HPO4.12H2O into water to obtain a mixed water solution, performing hydrothermal reaction under alkaline conditions to obtain phosphorus-doped graphene quantum dots, using Pi-Pi and hydrogen-bond interaction between the phosphorus-doped graphene quantum dots and graphite phase carbon nitride to form a stable composite material. The phosphorus-doped graphene quantum dot is a p-type semiconductor material, and forms a p-n junction composite material with n-type graphite phase carbon nitride; the p-n junction composite material has remarkably improved photogenerated charge separation rate and visible-light catalytic activity, and can be used for visible-light degradation of dye or organic pollutants as well as hydrogen production from photocatalytic water splitting.

Description

technical field [0001] The invention relates to the technical field of photocatalysis, in particular to a phosphorus-doped graphene quantum dot-graphite phase carbon nitride p-n junction photocatalyst and its preparation method and application. Background technique [0002] Photocatalysis is the separation of photogenerated carriers in semiconductor materials under the condition of light of a certain wavelength, and then the photogenerated electrons and holes are combined with ions or molecules to generate oxidative or reductive active free radicals. The organic macromolecules are degraded into carbon dioxide or other small molecular organic substances and water, and the semiconductor material, that is, the photocatalyst itself, does not change during the reaction. As an efficient, safe and environment-friendly purification technology, photocatalytic technology has received extensive attention at present, and has broad application prospects in the fields of dye and organic m...

Claims

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Application Information

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IPC IPC(8): B01J27/24C02F1/30A62D3/30C01B3/02C02F101/30
CPCA62D3/30C01B3/02C02F1/30B01J27/24C01B2203/1041C02F2101/308C02F2305/10A62D2101/20B01J35/39
Inventor 刘吉洋庞优优董晓平钱佳佳
Owner HUAWEI TEHCHNOLOGIES CO LTD
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