Method for doping nano black phosphorus or black phosphorus-based mixed material

A hybrid material, black phosphorus-based technology, applied in the field of nanomaterials, can solve the problems of uneven doping of composite materials, easy high-temperature sintering cost, harsh equipment requirements, etc., and achieves improved doping uniformity, good stability, and low cost. Effect

Active Publication Date: 2020-09-11
KUNMING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current doping methods are mainly atomic layer deposition, ball milling, mineralization, high temperature and high pressure and electrochemical methods. The composite materials prepare

Method used

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  • Method for doping nano black phosphorus or black phosphorus-based mixed material
  • Method for doping nano black phosphorus or black phosphorus-based mixed material
  • Method for doping nano black phosphorus or black phosphorus-based mixed material

Examples

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Effect test

Embodiment 1

[0027] Example 1: The preparation method of this nitrogen-doped perforated black phosphorene / reduced graphene oxide (N-HBP / rGO) composite material is as follows:

[0028] (1) Uniformly disperse 250mg of perforated black phosphorene and 50mg of graphene oxide in 60mL of ethanol to obtain a suspension;

[0029] (2) Place the suspension obtained in step (1) in a quartz glass tube and continuously feed argon and ammonia (ammonia accounts for 50% of the total gas volume), and then irradiate with ultraviolet light under 300r / min magnetic stirring reaction;

[0030] (3) After 72 hours of ultraviolet light irradiation reaction in step (2), the reaction product was subjected to solid-liquid separation, and the obtained solid was freeze-dried to prepare the N-HBP / rGO composite material;

[0031] figure 1 The N1S spectrogram of the nitrogen-doped perforated black phosphorene / reduced graphene oxide composite material obtained in this embodiment, as can be seen from the figure, the P-N a...

Embodiment 2

[0035] Embodiment 2: The preparation method of this sulfur-doped black phosphorus quantum dot is as follows:

[0036] (1) Uniformly disperse 300 mg of black phosphorus quantum dots in 30 mL of N-methylpyrrolidone solvent to obtain a suspension;

[0037] (2) Place the suspension obtained in step (1) in a high borosilicate glass tube and continuously feed helium and hydrogen sulfide (helium accounts for 35% of the total gas volume), and then carry out visible light irradiation reaction under air flow stirring;

[0038](3) After 48 hours of visible light irradiation reaction in step (2), the reaction product is finally subjected to solid-liquid separation, and the obtained solid is vacuum-dried to obtain a sulfur-doped black phosphorus quantum dot material.

Embodiment 3

[0039] Embodiment 3: the preparation method of this carbon and nitrogen double-doped black phosphorus nanobelt / graphene composite material is as follows:

[0040] (1) Uniformly disperse 150mg of black phosphorus nanobelts and 150mg of MXene in 300mL of dimethyl sulfoxide solvent to obtain a suspension;

[0041] (2) Place the suspension obtained in step (1) in a quartz glass tube, and continuously feed nitrogen, ethylene and ammonia (ethylene and ammonia account for 60% of the total volume of the gas, and the volume ratio of ethylene and ammonia is 1: 1), and then carry out ultraviolet light irradiation reaction under jet stirring;

[0042] (3) After 2 hours of reaction under ultraviolet light irradiation in step (2), the solid-liquid separation of the reaction product was carried out, and the obtained solid was dried naturally to obtain a carbon and nitrogen double-doped black phosphorus nanoribbon / MXene composite material.

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Abstract

The invention discloses a method for doping a nano black phosphorus or black phosphorus-based mixed material, which comprises the following steps: uniformly dispersing the nano black phosphorus or black phosphorus-based mixed material in a solvent or salt solution to obtain a suspension; secondly, putting the suspension liquid into a glass reactor, continuously introducing doping gas or not introducing the doping gas in an inert atmosphere, and then carrying out photochemical reaction under uniform-speed stirring; and finally, carrying out solid-liquid separation on the reaction product, and drying the obtained solid to obtain the doped nano black phosphorus or doped black phosphorus-based composite material. The method disclosed by the invention has the characteristics of mild reaction conditions, low cost and large-scale preparation, and the doped nano black phosphorus/black phosphorus-based composite material prepared by the method has a practical prospect in the fields of photoelectrons, field effect transistors, energy storage, catalysis, spraying fertilizers and the like.

Description

technical field [0001] The invention relates to a method for doping nanometer black phosphorus or black phosphorus-based composite materials, belonging to the technical field of nanometer materials. Background technique [0002] Nano-black phosphorus is a new type of two-dimensional material. Because of its unique crystal structure and energy band structure, it exhibits high carrier mobility, good optical and optoelectronic properties, and excellent mechanical properties. Therefore, nano-black phosphorus Phosphorus has shown attractive application prospects in fields such as energy storage, field effect transistors, solar cells, gas sensors, biomedicine, and catalysis. However, in practical applications, nano-black phosphorus has disadvantages such as poor conductivity and poor stability. In order to further promote the application of nano black phosphorus, it is doped with heteroatoms, so that the conduction band minimum of nano black phosphorus is lower than that of O 2 ...

Claims

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Application Information

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IPC IPC(8): C01B25/00C01B32/184B82Y40/00B82Y30/00C01G39/06H01M4/38H01M10/054
CPCC01B25/003C01B32/184B82Y40/00B82Y30/00C01G39/06H01M4/38H01M10/054Y02E60/10
Inventor 张倩赵震霆宋开伟刘岚君何路东梅毅廉培超
Owner KUNMING UNIV OF SCI & TECH
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