41 results about "Two dimensional crystal" patented technology

The invention discloses a vacancy-based controllable doping p-type two-dimensional transistor and a preparation method thereof, and mainly solves the problem that accurate controllable doping is difficult to realize in the prior art. According to the scheme, the device comprises an insulating substrate, a two-dimensional material channel layer, a source electrode, a drain electrode, a gate dielectric layer and a gate electrode, wherein the source electrode and the drain electrode are located at the two ends of the two-dimensional material channel layer; the gate dielectric layer is located on the two-dimensional material channel layer and the source and drain electrodes; the method comprises the following steps: depositing a thick mask layer, thinning the mask layer part through photoetching and etching to form a patterned thin layer, bombarding a two-dimensional material and a two-dimensional material under a mask plate thin layer through treated mask layer ions to form a surface vacancy, removing a mask plate, exposing the two-dimensional material in an oxygen flow, and oxidizing to form surface charge transfer doping. According to the invention, under the condition that the two-dimensional material is not damaged and the performance is not influenced, partitioned controllable doping is realized, and the conductivity of the two-dimensional transistor is effectively improved.

The invention provides a performance prediction method for a hafnium oxide semiconductor material structure, and relates to the technical field of semiconductor material research and development. The method comprises the following steps: performing global search in an Hf-O binary system by using crystal structure prediction software, determining the most stable two-dimensional Hf2O4 crystal structure, and further confirming the crystal configuration through structure optimization; calculating an Hf2O4 crystal structure by using density functional theory calculation software, and evaluating the dynamic, thermodynamic and mechanical stability of Hf2O4 by using a calculation result system; the electronic property of the Hf2O4 is obtained through further deep calculation, and the structural stability and semiconductor characteristics of the Hf2O4 are verified. According to the invention, through the first principle and the evolutionary algorithm calculation, the simulation calculation is used to replace the traditional trial-and-error experiment, and the novel semiconductor material with high reliability can be efficiently explored; a theoretical basis is provided for the design of a novel high-performance semiconductor material in advanced chip manufacturing, the research and development period can be expected to be remarkably shortened, and the cost can be reduced.

A memory device of embodiments includes a memory cell in which a first conductive layer, a switching layer, a third conductive layer, a variable resistance layer, and a second conductive layer are stacked in this order. The switching layer contains two-dimensional crystals. The first conductive layer or the second conductive layer contains two-dimensional crystals. When the memory cell is in a low resistance state, a nonlinear current-voltage characteristic that a current increases at a specific first threshold voltage appears as the absolute value of a voltage increases, and a current-voltage characteristic that the current decreases at a voltage having an absolute value smaller than that of the first threshold voltage appears as the absolute value of the voltage decreases from a voltage exceeding the first threshold voltage.

An apparatus and method for growth of a two-dimensional crystal material are provided. In a single atomic layer deposition cycle of atomic layer deposition, a two-dimensional amorphous film is deposited by a deposition unit. The nuclear bond breaking, bonding, and atomic arrangement on the surface of the deposited two-dimensional amorphous film are controlled by a laser system, which transforms the deposited two-dimensional amorphous film into a two-dimensional crystal film. In a deposition process, monitoring result information from a monitoring unit is received by an upper computer, which adjusts at least one of parameters of the laser system and the deposition unit in real-time according to the monitoring result information.

A semiconductor device including a two-dimensional nanocrystal channel, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device are provided. The semiconductor device includes a channel layer, a gate electrode disposed to face the channel layer, a gate insulating film disposed between the channel layer and the gate electrode, and a source electrode and a drain electrode electrically connected to the channel layer. The channel layer includes a first transition metal dichalcogenide layer and a second transition metal dichalcogenide layer disposed on the first transition metal dichalcogenide layer. The first transition metal dichalcogenide layer includes a highly crystalline transition metal dichalcogenide material having a two-dimensional crystal structure. The second transition metal dichalcogenide layer includes a nanocrystalline transition metal dichalcogenide material having a two-dimensional crystal structure.

The invention discloses a two-dimensional Van der Waals ferromagnetic quantum material with high Curie temperature and a preparation method and application thereof, the quantum material is of a two-dimensional nanosheet crystal structure and belongs to a layered Van der Waals material, and the chemical formula of the quantum material is InFeTe3; the two-dimensional InFeTe3 crystal has a hexagonal structure, and the lattice constant # imgabs0 # # imgabs1 # belongs to a trigonal system and a P3m1 space group; the method comprises the following steps: mixing In, Fe and Te elementary substances, pre-crystallizing to obtain an InFeTe metal block, and sublimating, transferring and crystallizing the metal block under vacuum sealing by adopting a double-temperature-zone tubular furnace to obtain millimeter-level InFeTe3 crystals with silver metal luster; stripping and transferring the InFeTe3 crystal, and then annealing the InFeTe3 crystal in inert gas to obtain a few-layer two-dimensional InFeTe3 crystal; the preparation method disclosed by the invention has the characteristics of simplicity, low energy consumption and high repeatability, and the two-dimensional InFeTe3 crystal prepared by the preparation method disclosed by the invention has the characteristics of high saturation magnetization and high Curie temperature, and can be applied to spin electronic devices and quantum devices.

The invention belongs to the technical field of crystal preparation, and particularly relates to an alpha-Al2Mo3O12 nanosheet as well as a preparation method and application thereof. According to the invention, the chemical vapor deposition method is adopted to epitaxially grow the highly oriented single crystal nanosheet on the c-plane sapphire substrate, so that the crystal quality is improved, the production cost is reduced, and meanwhile, large-scale preparation can be realized. The invention also provides the nanosheet prepared by the preparation method according to the scheme. The nanosheet provided by the invention is a two-dimensional crystal composed of multiple layers of atoms, has an extremely low thermal conductivity coefficient, and is excellent in chemical property, optical property and electronic property. The variable-temperature Raman spectrum research of the system finds that the characteristic phonons have ultra-short service life, which indicates that the nanosheet disclosed by the invention has an extremely low thermal conductivity coefficient.

A piezoelectric sensor is provided. The piezoelectric sensor comprises a first base, a first conductive layer adjacent to the first base, a second base, a second conductive layer adjacent to the second base; and a first structure between the first conductive layer and the second conductive layer. The first structure comprises a first layer with a first carbon-based material and a plurality of second structures with piezoelectricity. Each of the plurality of second structures comprises a second layer with a second carbon-based material and a third layer adjacent to the second layer. The third layer comprises a material of two-dimensional crystals of unconventional stoichiometries such as Na2Cl crystals.

The application discloses a monolayer polariton sequence double-parameter terahertz device and a preparation method thereof, and relates to the technical field of terahertz devices. The monolayer polariton sequence double-parameter terahertz device comprises a dielectric substrate, metal electrodes and sequence detection materials. The metal electrodes are at least three in number, and the number of the sequence detection materials is one less than the number of the metal electrodes. The multiple metal electrodes are arranged in sequence along a first direction on the dielectric substrate. The material of the sequence detection materials is a monolayer two-dimensional crystal. The sequence detection materials comprise multiple sequence strips and connecting parts arranged at two ends of the sequence strips. The sequence strip is formed by sequentially connecting multiple sequence units of the same shape. The multiple sequence strips are distributed in sequence along a second direction on the dielectric substrate. The shapes of the sequence units of each sequence detection material are different. The connecting parts arranged at the two ends of each sequence detection material are respectively connected with two adjacent metal electrodes in the first direction. The first direction and the second direction are perpendicular to each other.

A crystallographically-oriented metallic film with a two-dimensional crystal layer comprising a substrate, a metal film on the substrate, the two-dimensional crystal layer on the metal film on the substrate, and a tunable microstructure within the two-dimensional crystal layer on the metal film on the substrate, wherein the metal film has crystallographic registry to the two-dimensional crystal layer.

The application provides a two-dimensional Cu x Fe y Te crystal thin film and a preparation method thereof, and the method comprises the following steps: S1, selecting Cu, Fe and Te precursors, and pretreating a substrate; S2, mixing Cu and Fe, placing the mixed Cu and Fe in a first carrier, placing the Te precursor in a second carrier, and respectively arranging the first carrier, the second carrier and the substrate in corresponding areas of a CVD reaction device; S3, performing airtightness detection and carrier gas treatment on the CVD reaction device, and heating under the carrier gas condition to make the precursors sublimate and transport; S4, performing heat preservation growth under a preset temperature and the carrier gas condition to make the sublimated precursors react and deposit on the surface of the substrate; and S5, after the growth is completed, cooling the CVD reaction device to room temperature under an inert atmosphere, and obtaining a two-dimensional Cu x Fe y Te crystal thin film. Through regulation and control of the use amount ratio of the Cu, Fe and Te precursors and process parameters, the application realizes the synergistic transport and controllable deposition of the multi-element precursors, and prepares the two-dimensional Cu x Fe y Te crystal thin film with adjustable Cu / Fe element ratio and good crystallization quality.

A preparation method of an aluminum nitride (AlN) composite structure based on a two-dimensional (2D) crystal transition layer is provided. The preparation method includes: transferring the 2D crystal transition layer on a first periodic groove of an epitaxial substrate; forming a second periodic groove staggered with the first periodic groove on the 2D crystal transition layer; depositing a supporting protective layer; depositing a functional layer of a required AlN-based material; and removing the 2D crystal transition layer through thermal oxidation to obtain a semi-suspended AlN composite structure. The preparation method has low difficulty and is suitable for large-scale industrial production. Design windows of the periodic grooves and the AlN functional layer are large and can meet the material requirements of deep ultraviolet light-emitting diodes (DUV-LEDs) and radio frequency (RF) electronic devices for different purposes, resulting in a wide application range.

System and method of stacking two-dimensional (2D) crystal materials, including: receiving a stack design paradigm specifying a spatial relationship between at least two selected 2D crystal materials, a thickness parameter for each of the 2D crystal materials, and a core area for each of the 2D crystal materials; searching a flake database for images of subflakes related to the selected 2D crystal materials that meet the thickness and the core area for each of the 2D materials; generating a recommendation of a heterogeneous stack of images of the subflakes according to the spatial relationship, overlapping core areas of the subflakes; and presenting the heterogenous stack.

The present invention provides an article with a colloidal crystal structure attached to it, which has a high individual identification function for the colloidal crystal structure and is difficult to see when attached to the article. [Solution] An article 101 with a colloidal crystal structure, comprising an article 110 and a colloidal crystal structure 1 attached to the article 110, wherein the colloidal crystal structure 1 has a particle immobilization layer 20 and a plurality of colloidal particles 30 provided inside the particle immobilization layer 20, and the plurality of colloidal particles 30 are embedded in the particle immobilization layer 20 and arranged apart from each other along a plane direction perpendicular to the thickness direction of the particle immobilization layer 20, forming a plurality of types of two-dimensional crystals, and when viewed from the thickness direction, the directions of the axes of symmetry along the plane directions of the plurality of types of two-dimensional crystals are different from each other, and the colloidal particles 30 are provided on the surface of the article 110.

This invention discloses a phase-change memory (PCM) cell and its fabrication method. The PCM cell, from bottom to top, includes a first electrode, a PCM unit, and a second electrode. The PCM unit is configured as a vertically arranged cylindrical structure. From the inside out, the cylindrical structure includes a PCM material layer, a barrier layer, and a selector layer connected sequentially. The first electrode is connected to the selector layer, and the second electrode is connected to the PCM material layer. The selector layer includes a vertically arranged two-dimensional crystal diode layer. This invention fabricates a cylindrical PCM unit with a ring-shaped nested structure using a groove-filling method, which improves the device's performance and reliability. Furthermore, by using a two-dimensional crystal diode layer to form the selector layer, its lower threshold voltage effectively reduces device power consumption and saves production costs.

This invention provides a colloidal crystal structure that offers both high individual identification and decorative functions. [Solution] A colloidal crystal structure 1 comprising a base material 10, a particle fixing layer 20 provided on one main surface side of the base material 10, and a plurality of colloidal particles 30 provided inside the particle fixing layer 20, wherein the plurality of colloidal particles 30 are embedded in the particle fixing layer 20 and are arranged apart from each other along a plane direction perpendicular to the thickness direction of the particle fixing layer 20, forming a plurality of types of two-dimensional crystals, and when viewed from the thickness direction, the directions of the axes of symmetry along the plane direction of the plurality of types of two-dimensional crystals are different from each other, and the average particle size of the plurality of colloidal particles 30 is 1 μm or more.

Provided are a black phosphorus-two dimensional material complex and a method of manufacturing the black phosphorus-two dimensional material complex. The black phosphorus-two dimensional material complex includes: first and second two-dimensional material layers, which each have a two-dimensional crystal structure and are coupled to each other by van der Waals force; and a black phosphorus sheet which between the first and second two-dimensional material layers and having a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded.

The present invention discloses a device and method for modulating the polarization of two-dimensional crystal bandgap fluorescence. The device comprises: a highly conductive material substrate; an insulating layer formed on the highly conductive material substrate; a two-dimensional crystal monolayer formed on the insulating layer; a light-transmitting dielectric layer formed on the two-dimensional crystal monolayer; and a metal nano-metamaterial having a periodic unit structure formed on the light-transmitting dielectric layer. Based on the principle of metal surface plasmon resonance, the present invention utilizes the anisotropic resonant field of the metal nano-metamaterial to control the semiconductor fluorescence field, achieving polarized fluorescence and achieving polarization tunability. The device and method for modulating the polarization of two-dimensional crystal bandgap fluorescence effectively broaden the linear tunable range and temperature applicable range of the two-dimensional crystal bandgap fluorescence.

The invention belongs to the technical field of lubricants, and particularly relates to a ternary two-dimensional material NiPS3 lubricating oil additive and a preparation method of the additive and lubricating oil. The ternary two-dimensional crystal material phosphorus nickel trisulfide with the chemical formula of NiPS3 is prepared, powder is prepared through simple grinding, ultrasonic treatment, filtering and drying, the friction coefficient and the abrasion volume can be obviously reduced by adding the powder into common lubricating base oil, and compared with other structured two-dimensional materials, the process is relatively simple, the cost is reduced, and the application prospect is wide. The lubricating oil provided by the invention can be produced in a high-purity and large-batch manner, has good antifriction and wear-resistant properties, has strong dispersibility in base oil, and can reduce the friction coefficient by more than 50% and the wear by more than 50% by adding a very small amount of the lubricating oil.

The invention relates to the technical field of crystal luminescent materials, and provides a pyrazolyl two-dimensional Cu (I)-MOF crystal luminescent material and a preparation method and application thereof.The preparation method of the pyrazolyl two-dimensional Cu (I)-MOF crystal luminescent material comprises the following steps that S1, cupric nitrate and pyrazole are placed in a reaction kettle, then an organic solvent and deionized water are added, and stirring is conducted till the cupric nitrate and the pyrazole are dissolved; and S2, heating the mixed solution in the step S1 to 100 DEG C, reacting for 18-24 hours, cooling, washing with an organic solvent, and drying to obtain the Cu (I)-MOF crystal luminescent material. The low-toxicity copper nitrate containing 2.5 water and the organic chromophore pyrazole ligand are used as raw materials, almost perfect 1: 1 coordination binding and two-dimensional layered stacking Cu (I)-MOF is synthesized, the preparation method is simple, the excellent luminescence characteristic is shown, and the quantum yield reaches 99.8%.

The present invention relates to a method for preparing MXene materials, an MXene electrode sheet, and a lithium-ion battery using the MXene electrode sheet. The pressure is provided by a two-sided press hydraulic press or a six-sided press hydraulic press. This application also includes a high-pressure technology method for large-scale preparation of the above-mentioned modified two-dimensional crystal MXene materials. The pressure causes a significant increase in the carrier concentration and a decrease in the grain boundary barrier, thereby resulting in a significant increase in the conductivity of the MXene material, weakening the polarization phenomenon in the lithium-ion battery, increasing the reaction rate in the battery, and improving the reaction kinetics in the lithium-ion battery. By using a two-sided press hydraulic press or a six-sided press hydraulic press, a large number of modified two-dimensional crystal MXene materials can be prepared at one time, overcoming the problem of the small amount of recoverable samples of the diamond anvil press in the high-pressure field. This simple and effective large-scale preparation method is conducive to developing the application value of MXene materials and facilitating further industrial production in the field of lithium-ion batteries.

The invention belongs to the technical field of lubricants, and particularly relates to a ternary two-dimensional material FePS3 lubricating oil additive and a method for preparing the additive and lubricating oil. The ternary two-dimensional crystal material ferrophosphorus trisulfide with the chemical formula of FePS3 is prepared, then simple grinding, ultrasonic treatment, filtering and drying are performed to prepare powder, the powder is added into common lubricating base oil, the friction coefficient and the abrasion volume can be obviously reduced, and compared with other structured two-dimensional materials, the technology is relatively simple, cost is reduced, and the application range is wide. The lubricating oil prepared by the method can be produced in a large scale with high purity, has good antifriction and anti-wear properties, has strong dispersibility in base oil, and can reduce the friction coefficient of the lubricating base oil by 40% and the wear by more than 30% by adding a very small amount of the lubricating oil.

The invention discloses a two-dimensional crystal structure detection and area analysis method based on image recognition, and the method comprises the steps: carrying out the image collection of a substrate sample on which a two-dimensional material grows, carrying out the automatic detection of a crystal target in a to-be-detected image based on a YOLOv8 deep learning target detection model, and obtaining the geometric feature information of a crystal; calculating the crystal area according to the geometric feature information; generating standardized structured identification data according to the geometric feature information of the crystal and the area of the crystal; and carrying out two-dimensional spatial interpolation fitting on the standardized structured identification data to obtain an area distribution fitting and visual analysis result. According to the method, automatic identification and positioning of the crystal target can be rapidly completed without manual intervention, the identification speed is remarkably improved, and subjective deviation and misjudgment risks possibly brought by traditional manual judgment are avoided.

This invention discloses a method for controlling the phases of a Bi-Te-O ternary system, belonging to the field of two-dimensional semiconductor material preparation technology. Using Bi₂Te₃ and Bi₂O₃ powders as reaction sources, controllable growth is achieved on a mica substrate using CVD. By adjusting the growth temperature and system pressure to construct a pressure-temperature synergistic phase diagram, the growth windows for four different phases—elemental Te, Bi₂Te₃, Bi₂TeO₅, and Bi₂O₂Te—were determined and controlled. By utilizing the modulation of the vapor pressure and chemical potential of the precursors by temperature and pressure, the problem of low phase purity caused by differences in precursor reaction concentration and activity in the ternary system is solved, successfully preparing ultrathin two-dimensional Bi₂TeO₅ crystals with a thickness of 3.0–5.7 nm. The preparation method provided by this invention is simple and highly controllable, offering a new technological paradigm for the large-scale and precise preparation of complex ternary two-dimensional systems.

Provided are a semiconductor device including a two-dimensional nano-crystalline grain channel, a method of manufacturing the semiconductor device, and an electronic apparatus including the semiconductor device. The semiconductor device includes a channel layer, a gate electrode disposed to face the channel layer, a gate insulating film disposed between the channel layer and the gate electrode, and a source electrode and a drain electrode electrically connected to the channel layer. The channel layer includes a first transition metal dichalcogenide layer and a second transition metal dichalcogenide layer disposed on the first transition metal dichalcogenide layer. The first transition metal dichalcogenide layer includes a highly crystalline transition metal dichalcogenide material having a two-dimensional crystal structure. The second transition metal dichalcogenide layer includes a nano-crystalline grain transition metal dichalcogenide material having a two-dimensional crystal structure.

This invention discloses a phase-change memory (PCM) cell and its fabrication method. The PCM cell, from bottom to top, includes: a first electrode, a PCM unit, and a second electrode. The PCM unit is a vertically arranged cylindrical structure, which includes, from the inside out, a select device layer, a barrier layer, and a PCM material layer connected sequentially. Multiple first electrodes are present and connected to the PCM material layers. The select device layer is connected to the second electrode and includes a vertically arranged two-dimensional crystal diode layer. This invention achieves storage by forming a structure where multiple phase-change resistors share a single select device. The use of two-dimensional crystal diodes to form the select device effectively reduces device power consumption and ensures compatibility with standard CMOS process lines, thereby reducing production costs.

The present invention provides methods of making a nanosheet or two-dimensional crystal comprising a channel, including a method comprising: forming a precursor composition comprising a detergent, a channel-forming agent, and a polymer, wherein the detergent is present at a concentration of about its critical micelle concentration (CMC) or above; and adjusting a temperature of the precursor composition to a temperature effective to induce phase separation of the detergent, thereby driving precipitation of the nanosheet or two-dimensional crystal comprising the channel.

This invention belongs to the field of gas storage technology and relates to a method for desorbing gas from a two-dimensional crystal, comprising: 1) selecting a two-dimensional crystal material adsorbing the gas to be desorbed; 2) placing the two-dimensional crystal material from step 1) in a gas desorption chamber; 3) processing the two-dimensional crystal material from step 1); the processing method is heating treatment, light radiation treatment, plasma treatment, and / or treatment by an external electric field; 4) under the action of the processing method in step 3), reducing the interaction force between the adsorbed gas adsorbed on the two-dimensional crystal material and the two-dimensional crystal, thereby completing the desorption of the adsorbed gas from the two-dimensional crystal. This invention provides a method and application for adsorbing gas from a two-dimensional crystal that is easy to operate, has strong adsorption stability, and is easy to control.

The application belongs to the technical field of crystal preparation, and particularly relates to a kind of alpha-Al2Mo3O 12 Nanometer sheet, its preparation method and application. The application adopts chemical vapor deposition method to epitaxially grow high directional monocrystal nanometer sheet on c face sapphire substrate, improves crystal quality, reduces production cost, and can be mass produced. The application also provides nanometer sheet obtained by the preparation method. The nanometer sheet provided by the application is two-dimensional crystal composed of multiple layers of atoms, has extremely low thermal conductivity coefficient, and excellent chemical, optical and electronic properties. Systematic variable-temperature Raman spectrum research finds that characteristic phonon has extremely short lifetime, indicating that the nanometer sheet has extremely low thermal conductivity coefficient.

The invention discloses a monatomic layer polariton sequence structure double-parameter terahertz device and a preparation method thereof, and the monatomic layer polariton sequence structure double-parameter terahertz device comprises a dielectric substrate, a metal electrode and a sequence structure detection material. The number of the sequential detection materials is one less than that of the metal electrodes; the plurality of metal electrodes are sequentially arranged on the dielectric substrate along a first direction; the sequential detection material is made of a monatomic layer two-dimensional crystal; the sequential detection material comprises a plurality of sequential strips and connecting parts arranged at the two ends of the sequential strips, each sequential strip is formed by sequentially connecting a plurality of sequential elements with the same shape, and the sequential strips are sequentially distributed on the dielectric substrate in the second direction; the shapes of the sequence elements of the sequence detection materials are different; the connecting parts, arranged at the two ends of the sequence strip, of each sequence detection material are connected with the two adjacent metal electrodes in the first direction; wherein the first direction is perpendicular to the second direction.