22 results about "Two dimensional crystal" patented technology

A memory device of embodiments includes a memory cell in which a first conductive layer, a switching layer, a third conductive layer, a variable resistance layer, and a second conductive layer are stacked in this order. The switching layer contains two-dimensional crystals. The first conductive layer or the second conductive layer contains two-dimensional crystals. When the memory cell is in a low resistance state, a nonlinear current-voltage characteristic that a current increases at a specific first threshold voltage appears as the absolute value of a voltage increases, and a current-voltage characteristic that the current decreases at a voltage having an absolute value smaller than that of the first threshold voltage appears as the absolute value of the voltage decreases from a voltage exceeding the first threshold voltage.

A semiconductor device including a two-dimensional nanocrystal channel, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device are provided. The semiconductor device includes a channel layer, a gate electrode disposed to face the channel layer, a gate insulating film disposed between the channel layer and the gate electrode, and a source electrode and a drain electrode electrically connected to the channel layer. The channel layer includes a first transition metal dichalcogenide layer and a second transition metal dichalcogenide layer disposed on the first transition metal dichalcogenide layer. The first transition metal dichalcogenide layer includes a highly crystalline transition metal dichalcogenide material having a two-dimensional crystal structure. The second transition metal dichalcogenide layer includes a nanocrystalline transition metal dichalcogenide material having a two-dimensional crystal structure.

A piezoelectric sensor is provided. The piezoelectric sensor comprises a first base, a first conductive layer adjacent to the first base, a second base, a second conductive layer adjacent to the second base; and a first structure between the first conductive layer and the second conductive layer. The first structure comprises a first layer with a first carbon-based material and a plurality of second structures with piezoelectricity. Each of the plurality of second structures comprises a second layer with a second carbon-based material and a third layer adjacent to the second layer. The third layer comprises a material of two-dimensional crystals of unconventional stoichiometries such as Na2Cl crystals.

The application provides a two-dimensional Cu x Fe y Te crystal thin film and a preparation method thereof, and the method comprises the following steps: S1, selecting Cu, Fe and Te precursors, and pretreating a substrate; S2, mixing Cu and Fe, placing the mixed Cu and Fe in a first carrier, placing the Te precursor in a second carrier, and respectively arranging the first carrier, the second carrier and the substrate in corresponding areas of a CVD reaction device; S3, performing airtightness detection and carrier gas treatment on the CVD reaction device, and heating under the carrier gas condition to make the precursors sublimate and transport; S4, performing heat preservation growth under a preset temperature and the carrier gas condition to make the sublimated precursors react and deposit on the surface of the substrate; and S5, after the growth is completed, cooling the CVD reaction device to room temperature under an inert atmosphere, and obtaining a two-dimensional Cu x Fe y Te crystal thin film. Through regulation and control of the use amount ratio of the Cu, Fe and Te precursors and process parameters, the application realizes the synergistic transport and controllable deposition of the multi-element precursors, and prepares the two-dimensional Cu x Fe y Te crystal thin film with adjustable Cu / Fe element ratio and good crystallization quality.

A preparation method of an aluminum nitride (AlN) composite structure based on a two-dimensional (2D) crystal transition layer is provided. The preparation method includes: transferring the 2D crystal transition layer on a first periodic groove of an epitaxial substrate; forming a second periodic groove staggered with the first periodic groove on the 2D crystal transition layer; depositing a supporting protective layer; depositing a functional layer of a required AlN-based material; and removing the 2D crystal transition layer through thermal oxidation to obtain a semi-suspended AlN composite structure. The preparation method has low difficulty and is suitable for large-scale industrial production. Design windows of the periodic grooves and the AlN functional layer are large and can meet the material requirements of deep ultraviolet light-emitting diodes (DUV-LEDs) and radio frequency (RF) electronic devices for different purposes, resulting in a wide application range.

System and method of stacking two-dimensional (2D) crystal materials, including: receiving a stack design paradigm specifying a spatial relationship between at least two selected 2D crystal materials, a thickness parameter for each of the 2D crystal materials, and a core area for each of the 2D crystal materials; searching a flake database for images of subflakes related to the selected 2D crystal materials that meet the thickness and the core area for each of the 2D materials; generating a recommendation of a heterogeneous stack of images of the subflakes according to the spatial relationship, overlapping core areas of the subflakes; and presenting the heterogenous stack.

The present invention provides an article with a colloidal crystal structure attached to it, which has a high individual identification function for the colloidal crystal structure and is difficult to see when attached to the article. [Solution] An article 101 with a colloidal crystal structure, comprising an article 110 and a colloidal crystal structure 1 attached to the article 110, wherein the colloidal crystal structure 1 has a particle immobilization layer 20 and a plurality of colloidal particles 30 provided inside the particle immobilization layer 20, and the plurality of colloidal particles 30 are embedded in the particle immobilization layer 20 and arranged apart from each other along a plane direction perpendicular to the thickness direction of the particle immobilization layer 20, forming a plurality of types of two-dimensional crystals, and when viewed from the thickness direction, the directions of the axes of symmetry along the plane directions of the plurality of types of two-dimensional crystals are different from each other, and the colloidal particles 30 are provided on the surface of the article 110.

This invention discloses a phase-change memory (PCM) cell and its fabrication method. The PCM cell, from bottom to top, includes a first electrode, a PCM unit, and a second electrode. The PCM unit is configured as a vertically arranged cylindrical structure. From the inside out, the cylindrical structure includes a PCM material layer, a barrier layer, and a selector layer connected sequentially. The first electrode is connected to the selector layer, and the second electrode is connected to the PCM material layer. The selector layer includes a vertically arranged two-dimensional crystal diode layer. This invention fabricates a cylindrical PCM unit with a ring-shaped nested structure using a groove-filling method, which improves the device's performance and reliability. Furthermore, by using a two-dimensional crystal diode layer to form the selector layer, its lower threshold voltage effectively reduces device power consumption and saves production costs.

This invention provides a colloidal crystal structure that offers both high individual identification and decorative functions. [Solution] A colloidal crystal structure 1 comprising a base material 10, a particle fixing layer 20 provided on one main surface side of the base material 10, and a plurality of colloidal particles 30 provided inside the particle fixing layer 20, wherein the plurality of colloidal particles 30 are embedded in the particle fixing layer 20 and are arranged apart from each other along a plane direction perpendicular to the thickness direction of the particle fixing layer 20, forming a plurality of types of two-dimensional crystals, and when viewed from the thickness direction, the directions of the axes of symmetry along the plane direction of the plurality of types of two-dimensional crystals are different from each other, and the average particle size of the plurality of colloidal particles 30 is 1 μm or more.

This invention discloses a method for controlling the phases of a Bi-Te-O ternary system, belonging to the field of two-dimensional semiconductor material preparation technology. Using Bi₂Te₃ and Bi₂O₃ powders as reaction sources, controllable growth is achieved on a mica substrate using CVD. By adjusting the growth temperature and system pressure to construct a pressure-temperature synergistic phase diagram, the growth windows for four different phases—elemental Te, Bi₂Te₃, Bi₂TeO₅, and Bi₂O₂Te—were determined and controlled. By utilizing the modulation of the vapor pressure and chemical potential of the precursors by temperature and pressure, the problem of low phase purity caused by differences in precursor reaction concentration and activity in the ternary system is solved, successfully preparing ultrathin two-dimensional Bi₂TeO₅ crystals with a thickness of 3.0–5.7 nm. The preparation method provided by this invention is simple and highly controllable, offering a new technological paradigm for the large-scale and precise preparation of complex ternary two-dimensional systems.

Provided are a semiconductor device including a two-dimensional nano-crystalline grain channel, a method of manufacturing the semiconductor device, and an electronic apparatus including the semiconductor device. The semiconductor device includes a channel layer, a gate electrode disposed to face the channel layer, a gate insulating film disposed between the channel layer and the gate electrode, and a source electrode and a drain electrode electrically connected to the channel layer. The channel layer includes a first transition metal dichalcogenide layer and a second transition metal dichalcogenide layer disposed on the first transition metal dichalcogenide layer. The first transition metal dichalcogenide layer includes a highly crystalline transition metal dichalcogenide material having a two-dimensional crystal structure. The second transition metal dichalcogenide layer includes a nano-crystalline grain transition metal dichalcogenide material having a two-dimensional crystal structure.

This invention discloses a phase-change memory (PCM) cell and its fabrication method. The PCM cell, from bottom to top, includes: a first electrode, a PCM unit, and a second electrode. The PCM unit is a vertically arranged cylindrical structure, which includes, from the inside out, a select device layer, a barrier layer, and a PCM material layer connected sequentially. Multiple first electrodes are present and connected to the PCM material layers. The select device layer is connected to the second electrode and includes a vertically arranged two-dimensional crystal diode layer. This invention achieves storage by forming a structure where multiple phase-change resistors share a single select device. The use of two-dimensional crystal diodes to form the select device effectively reduces device power consumption and ensures compatibility with standard CMOS process lines, thereby reducing production costs.

The present invention provides methods of making a nanosheet or two-dimensional crystal comprising a channel, including a method comprising: forming a precursor composition comprising a detergent, a channel-forming agent, and a polymer, wherein the detergent is present at a concentration of about its critical micelle concentration (CMC) or above; and adjusting a temperature of the precursor composition to a temperature effective to induce phase separation of the detergent, thereby driving precipitation of the nanosheet or two-dimensional crystal comprising the channel.

This invention belongs to the field of gas storage technology and relates to a method for desorbing gas from a two-dimensional crystal, comprising: 1) selecting a two-dimensional crystal material adsorbing the gas to be desorbed; 2) placing the two-dimensional crystal material from step 1) in a gas desorption chamber; 3) processing the two-dimensional crystal material from step 1); the processing method is heating treatment, light radiation treatment, plasma treatment, and / or treatment by an external electric field; 4) under the action of the processing method in step 3), reducing the interaction force between the adsorbed gas adsorbed on the two-dimensional crystal material and the two-dimensional crystal, thereby completing the desorption of the adsorbed gas from the two-dimensional crystal. This invention provides a method and application for adsorbing gas from a two-dimensional crystal that is easy to operate, has strong adsorption stability, and is easy to control.

The application belongs to the technical field of crystal preparation, and particularly relates to a kind of alpha-Al2Mo3O 12 Nanometer sheet, its preparation method and application. The application adopts chemical vapor deposition method to epitaxially grow high directional monocrystal nanometer sheet on c face sapphire substrate, improves crystal quality, reduces production cost, and can be mass produced. The application also provides nanometer sheet obtained by the preparation method. The nanometer sheet provided by the application is two-dimensional crystal composed of multiple layers of atoms, has extremely low thermal conductivity coefficient, and excellent chemical, optical and electronic properties. Systematic variable-temperature Raman spectrum research finds that characteristic phonon has extremely short lifetime, indicating that the nanometer sheet has extremely low thermal conductivity coefficient.

A security tag that includes a resin layer, and a plurality of colloidal particles. The plurality of colloidal particles are embedded in the resin layer and arranged, spaced apart from one another, along a planar direction perpendicular to a thickness direction. The plurality of colloidal particles constitute at least one type of two-dimensional crystal.

This invention provides a colloidal crystal structure in which diffraction patterns originating from the two-dimensional crystal composed of colloidal particles are easily detected. [Solution] A colloidal crystal structure 1 comprising a base material 10, a particle immobilization layer 20 provided on one main surface side of the base material 10, and a plurality of colloidal particles 30 provided inside the particle immobilization layer 20, wherein the plurality of colloidal particles 30 are embedded in the particle immobilization layer 20 and are arranged apart from each other along a planar direction perpendicular to the thickness direction of the particle immobilization layer 20, forming at least one type of two-dimensional crystal, and the arithmetic mean roughness Ra of the surface of the particle immobilization layer 20 opposite to the base material 10 is 0.5 μm or less.

Two-dimensional (2D) crystals have renewed opportunities in artificial lattice design and assembly without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. Systems, methods, and devices present optical dispersion engineering in a superlattice structure including alternating layers of 2D excitonic chalcogenides and dielectric insulators. Examples demonstrate >90% narrowband absorption in <4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. The results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers.

The invention discloses a two-dimensional antiferromagnetic material and a preparation method and application thereof, and the method comprises the following steps: adopting Mn and Te elementary substance powder, taking I2 as a transportation agent, and synthesizing a blocky MnTe precursor through a vacuum chemical vapor transport method under a vacuum sealing condition; the preparation method comprises the following steps: mixing a ground MnTe precursor with In elementary substance powder and fluxing agent KCl powder, carrying out fluxing reaction in a vertical confinement space constrained by a constant normal pressure and in an inert atmosphere, and inducing the crystal to epitaxially grow along the horizontal direction, thereby forming a two-dimensional Mn (InTe2) 2 crystal on a fluorine crystal mica substrate, and carrying out wet transfer to obtain the two-dimensional Mn (InTe2) 2 crystal on a SiO2 / Si substrate, according to the method, the two-dimensional Mn (InTe2) 2 crystal with the antiferromagnetic characteristic is prepared through a step-by-step precursor induction type confinement pressure melting epitaxial method, and the method is simple in process and high in repeatability; the two-dimensional Mn (InTe2) 2 crystal has the characteristics of good crystal quality, large transverse size, controllable layer number and the like, and can be applied to a high-density magnetic storage device.

The present disclosure relates to a composition that includes a first layer having a first perovskite having a 3-dimensional (3D) crystalline structure and a second layer having a second perovskite having a 2-dimensional (2D) crystalline structure, where the 3D crystalline structure includes ABX3, the 2D crystalline structure includes A′BX4, A includes a first cation, B includes a second cation, X includes an anion, and A′ includes a third cation having a 2+ charge.

Provided are a complex of heterogeneous two-dimensional materials and a method of manufacturing the same. The complex of heterogeneous two-dimensional materials may include a substrate; a first two-dimensional material layer on the substrate and having a two-dimensional crystal structure; and a second two-dimensional material layer between the substrate and the first two-dimensional material layer. The second two-dimensional material layer have a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded to each other.

The application relates to the field of two-dimensional layered ternary compounds and chemical vapor deposition (CVD) preparation thereof, in particular to a preparation method of 3R phase multilayer ternary compound MA2Z4 material. A liquid Cu-Au alloy is used to coat a transition metal M to form a growth substrate, A elements and Z elements are introduced at a temperature higher than the melting point of the alloy, a 3R phase multilayer MA2Z4 ternary compound crystal is grown through CVD, and the electrochemical bubbling method is used to transfer the crystal to any substrate. The application has the characteristics of simple preparation process, easy control of product composition, thickness and size, and obtainment of 3R phase crystals with complete ABC stacking, and the SHG behavior of the product is enhanced with the increase of the layer number, which proves the expandable strong polarization characteristics, lays a foundation for the research and application of two-dimensional MA2Z4 crystals in the fields of nonlinear optics, piezoelectricity, valley spin, sliding ferroelectricity, bulk photovoltaic and the like.