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Preparation method of two-dimensional molybdenum sulfide crystal material with special morphology

A crystal material, molybdenum sulfide technology, applied in polycrystalline material growth, chemical instruments and methods, crystal growth, etc.

Active Publication Date: 2021-04-16
HANGZHOU DIANZI UNIV
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Problems solved by technology

However, the use of one-step chemical vapor deposition method to achieve special morphology two-dimensional MoS 2 The controlled growth of crystals has not yet been reported

Method used

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  • Preparation method of two-dimensional molybdenum sulfide crystal material with special morphology
  • Preparation method of two-dimensional molybdenum sulfide crystal material with special morphology
  • Preparation method of two-dimensional molybdenum sulfide crystal material with special morphology

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Embodiment 1

[0035] A method for preparing a two-dimensional molybdenum sulfide crystal material with special morphology, using chemical vapor deposition method, using Si / SiO 2 For the deposition substrate, nano-scale molybdenum trioxide powder is used as Mo source, which is prepared by reacting with sulfur source S powder. Its preparation is carried out in a double-temperature zone horizontal tube furnace, specifically including the following preparation steps:

[0036] (1) Select Si / SiO that does not contain catalyst and seed layer 2 Substrate, the size of the substrate is 1cm×3cm, Si / SiO 2 The substrate was immersed in acetone solution for 15 minutes, then ultrasonically cleaned in ethanol solution for 15 minutes, then rinsed with deionized water for 3 to 5 times, then dried with nitrogen with a purity of 99.9%, and finally kept in an oven at 100 °C 1 hour to dry for later use;

[0037] (2) The double-temperature-zone horizontal tube furnace is successively set as the sulfur source t...

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Abstract

The invention discloses a preparation method of a two-dimensional molybdenum sulfide crystal material with a special morphology. The preparation method of the MoS2 crystal material with different special morphologies comprises the following steps of adopting a chemical vapor deposition method, taking Si / SiO2 as a substrate and nanoscale MoO3 powder as a Mo source, inversely buckling the substrate above the powder to construct a narrow confinement space, reacting with sulfur vapor, and preparing the MoS2 crystal materials with different special morphologies on the substrate, namely trapezoids, parallelograms and irregular parallelograms. The obtained MoS2 crystal materials with different morphologies can be used as channel materials of transistors to be applied to the field of ultrathin electronic devices. According to the preparation method disclosed by the invention, a narrow confinement space is constructed between the substrate and the material source, and the growth of two-dimensional MoS2 crystal materials with different special morphologies is successfully realized, so that the growth theory of the two-dimensional material is further researched.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a preparation method of a special-morphology two-dimensional molybdenum sulfide crystal material. Background technique [0002] Ultrathin two-dimensional semiconductor materials, such as transition metal dichalcogenides (TMDs), black phosphorus, boron nitride (BN), etc., have excellent optical and electrical properties, making them ideal for field-effect transistors, photodetectors, light-emitting diodes, Energy and other fields have promising application potential. Compared with bulk materials, molybdenum disulfide (MoS 2 ) represented by thin-layer two-dimensional TMDs have excellent optical and electrical properties, such as layer-dependent indirect-direct bandgap transition, tunable bandwidth, high light emission efficiency, abundant excitons, and high electron mobility. , Good flexibility. So far, a variety of single-layer TMDs crystals have been ...

Claims

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Application Information

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IPC IPC(8): C30B25/16C30B28/14C30B29/46C30B29/64H01L29/10
Inventor 陈飞姜夏苏伟涛
Owner HANGZHOU DIANZI UNIV
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