Epitaxial preparation method of gallium nitride LED

Abstract

The invention discloses an epitaxial preparation method of a gallium nitride LED. The method comprises the following steps of growing a gallium nitride buffer layer on a sapphire substrate; annealingthe gallium nitride buffer layer shape to form at least one crystal nucleus island-buffer layer; and transversely growing the gallium nitride layer on the basis of the crystal nuclear island until allthe crystal nuclear islands are connected with each other, so as to form an integral two-dimensional crystal layer-3D crystal nucleus layer. According to the preparation method, a buffer insertion layer is grown in the middle of an active region. The buffer insertion layer is formed by alternately laminating a first sub-layer, a second sub-layer and a third sub-layer. The first sub-layer is madeof P-type gallium nitride, the second sub-layer is made of P-type indium gallium nitrogen, and the third sub-layer is made of N-type aluminum gallium nitrogen. According to the technical scheme, the functions of electronic deceleration and uniform expansion are achieved through consumption, blocking and emission effects. The problem of leakage current of positive conduction is solved, and the problem that the light emitting efficiency of the conventional gallium nitride LED epitaxial structure is lowered along with the increasing of the current density is solved.

Description

【Technical field】 [0001] The patent of the present invention relates to an epitaxial preparation method of gallium nitride light-emitting diodes, in particular to a novel quantum well preparation method 【Background technique】 [0002] Semiconductor light-emitting diodes have the characteristics of high luminous efficiency, long life, small size, rich colors, etc., and are widely used. Semiconductor light-emitting diodes emit light by radiative recombination of electrons and holes in the active region sandwiched between the n-type doped region and the p-type doped region. The difference in the mobility of electrons and holes is an important reason affecting the luminous efficiency. Generally, the mobility of electrons is more than 10 times that of holes. The difference in mobility causes a large number of electrons to cross the active region and enter the p-type doped region to recombine with holes, which affects the luminous efficiency. [0003] In the traditional GaN lig...

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Problems solved by technology

[0004] In view of the above situation, the present invention proposes an epitaxial preparation method of gallium nitride LED, which can effectively improve the problem that the luminous efficiency decreases as the current density increases.

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