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Roughened flip-chip GAAS-based LED epitaxial wafer grown on a SIC or SI pattern substrate and preparation method thereof

An LED epitaxial wafer and substrate technology, applied in the field of optoelectronics, can solve the problem of no introduction, etc., and achieve the effects of improving the light extraction rate, increasing the roughening area, and reducing the harm

Active Publication Date: 2018-08-17
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method focuses on the growth of AlGaInP LED epitaxial wafers on silicon substrates and its preparation methods, without using flip-chip, and does not introduce SiC pattern substrates to grow LEDs.

Method used

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  • Roughened flip-chip GAAS-based LED epitaxial wafer grown on a SIC or SI pattern substrate and preparation method thereof
  • Roughened flip-chip GAAS-based LED epitaxial wafer grown on a SIC or SI pattern substrate and preparation method thereof
  • Roughened flip-chip GAAS-based LED epitaxial wafer grown on a SIC or SI pattern substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] An N-type SiC pattern substrate flip-chip LED epitaxial wafer, such as image 3 As shown, it includes a corrosion barrier layer 2, an AlInP lower confinement layer 3, a multi-quantum well light-emitting region 4, an AlInP upper confinement layer 5, a current spreading layer 6, and a SiC substrate 8 from top to bottom, and the corrosion barrier layer 2 is provided with cylinder.

[0064] The setting of the cylinder increases the roughness of the surface, improves the light extraction efficiency of the flip-chip GaAs-based LED epitaxial wafer, and makes the actual light extraction rate reach more than 90%, which solves the problem of low light extraction efficiency.

[0065] The corrosion barrier layer 2 is periodically provided with cylinders, the period of the cylinders is 500nm, the depth of the depressions of the cylinders is 3um, and the height of the protrusions of the cylinders is 50um.

Embodiment 2

[0067] A method for growing the flip-chip LED epitaxial wafer described in Embodiment 1 on an N-type SiC pattern substrate, the specific steps comprising:

[0068] (1) Using a dry etching method, etch on the surface of the original N-type SiC substrate to make an N-type SiC pattern substrate; specifically include:

[0069] (I) Evaporate SiO with a thickness of 800 angstroms on the pristine N-type SiC substrate 2 ;

[0070] (Ⅱ) on SiO 2 Apply photoresist evenly on the surface, and cover with different pre-engraved pattern masks; the pattern masks are circular;

[0071] (Ⅲ) Expose the area other than the area covered by the pattern mask, and use a photolithography machine to carve out the mask pattern;

[0072] (IV) Develop in NaOH solution for 35 seconds to expose SiO with mask pattern 2 , the mass concentration of NaOH solution is 3%, and it is etched with HF acid for 1 minute, and the acid etches away SiO 2 , exposing the N-type SiC substrate;

[0073] (Ⅴ) Etch the phot...

Embodiment 3

[0091] A flip-chip LED epitaxial wafer with a P-type SiC pattern substrate, which sequentially includes a corrosion barrier layer 2, an AlInP lower confinement layer 3, a multi-quantum well light-emitting region 4, an AlInP upper confinement layer 5, a current spreading layer 6, and SiC from top to bottom. The substrate 8 and the corrosion barrier layer 2 are provided with rhomboids.

[0092] The arrangement of rhomboids increases the roughness of the surface, improves the light extraction efficiency of the flip-chip GaAs-based LED epitaxial wafer, makes the actual light extraction rate reach more than 90%, and solves the problem of low light extraction efficiency.

[0093] The corrosion barrier layer 2 is periodically provided with rhomboids, the period of the rhomboids is 500nm, the depth of the rhombus concave is 3um, and the height of the rhombus protrusion is 50um.

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Abstract

The invention relates to a coarsening inverted GaAs-based LED (light emitting diode) epitaxial wafer growing on an SiC or Si pattern substrate and a preparation method thereof. The LED epitaxial wafer sequentially comprises a corrosion blocking layer, an AlInP lower limiting layer, a multiple quantum well luminous region, an AlInP upper limiting layer, a current expansion layer, and the SiC substrate or an Si substrate from top to bottom, wherein a projected structure body and a recessed structure body are arranged on the corrosion blocking layer. Through the arrangement of the projected structure body or the recessed structure body, the surface roughness is increased; the light outlet efficiency of the inverted GaAs-based LED epitaxial wafer is improved, so that the practical light outlet rate reaches 90 percent or higher; the problem of low light outlet efficiency is solved.

Description

technical field [0001] The invention relates to a roughened flip-chip GaAs-based LED epitaxial wafer grown on a SiC or Si pattern substrate and a preparation method thereof, belonging to the field of optoelectronic technology. Background technique [0002] In the field of chips, in order to avoid affecting the luminous efficiency due to the occupation of the light-emitting area by the electrodes in the front-mounted chip, the flip-chip technology is gradually used, especially in the application market of high-power, external lighting, and urban lighting projects. [0003] In the prior art, GaAs-based LEDs are prepared by epitaxial growth on GaAs substrates. Since the p and n electrodes are on the same side of the LED in the front-mounted structure, current crowding is prone to occur, and the thermal resistance is high, which reduces the internal quantum efficiency. To reduce the cost of lamps in the future, in addition to the material cost, it is particularly important to i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/22H01L33/00H01L33/30
CPCH01L33/007H01L33/0093H01L33/22H01L33/30
Inventor 李志虎张新于军王成新徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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